FLL400IP-2

FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 107 -65 to +175 +175 Unit V V W °C °C • Solid State Base-Station Power Amplifier. • PCS/PCN Communication Systems. Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Drain Current Power-Added Efficiency Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Thermal Resistance CASE STYLE: IP Symbol IDSS gm Vp VGSO P1dB G1dB IDSR ηadd P1dB G1dB Rth VDS = 12V f=1.96GHz IDS = 2A VDS = 10V f=1.96GHz IDS = 2A Channel to Case Conditions VDS = 5V, VGS=0V VDS = 5V, IDS=7.2A VDS = 5V, IDS=720mA IGS = -720µA Min. -1.0 -5 44.5 9.0 Limits Typ. Max. 12 6000 -2.0 45.5 10.0 6.0 44 44.5 10.0 1.0 16 -3.5 8.0 1.4 Unit A mS V V dBm dB A % dBm dB °C/W G.C.P.: Gain Compression Point Edition 1.6 December 1999 1 FLL400IP-2 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 120 OUTPUT POWER & ηadd vs. INPUT POWER 46 45 100 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 0 50 100 150 200 VDS = 12V IDS = 2A f = 1.96GHz Pout 50 40 Total Power Dissipation (W) 80 60 Output Power (dBm) 40 ηadd 30 20 10 0 20 19 21 23 25 27 29 31 33 35 37 Case Temperature (°C) Input Power (dBm) OUTPUT POWER vs. FREQUENCY 47 46 45 44 43 42 VDS = 12V IDS = 2A Pin=37dBm Output Power (dBm) 30dBm 41 40 39 38 37 36 35 34 33 32 31 30 1.8 1.85 1.9 1.95 2.0 20dBm 25dBm Frequency (GHz) 2 ηadd (%) FLL400IP-2 L-Band Medium & High Power GaAs FET OUTPUT POWER vs. IMD -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 VDS = 12V IDS = 2A f = 1.96GHz ∆f = +5.0MHz IM3 IMD (dBc) IM5 26 28 30 32 34 36 38 40 42 44 Total Output Power (dBm) OUTPUT POWER vs. IMD -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 VDS = 10V IDS = 5A f = 1.96GHz ∆f = +5MHz IM3 IM5 IMD (dBc) 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 Total Output Power (dBm) 3 FLL400IP-2 L-Band Medium & High Power GaAs FET Case Style "IP" Metal-Ceramic Hermetic Package 22±0.2 (0.866) 18.6±0.2 (0.732) 2-1 (0.039) 45° 1 2 3.0±0.5 MIN. (0.118) 0.1+0.05 -0.01 (0.039) 2.4 (0.094) 2.6±0.2 (0.102) 9.8±0.2 (0.386) 6 5 2-R1.3±0.2 (0.051) 5 (0.197) 13.8±0.2 (0.543) 13.3 (0.523) 4 3 3.0±0.5 MIN. (0.118) 2-1.4 (0.055) 5.5MAX (0.217) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 1.9 (0.075) 8.2 (0.332) 1, 2: Gate 3, 6: Source 4, 5: Drain Unit: mm (inches) CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0799M200 4