FLL810IQ-4C

FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design which offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely suited for use in WLL applications as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 136 -65 to +175 +175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with gate resistance of 5Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power Linear Gain (Note 1) Power-Added Efficiency Drain Current Thermal Resistance CASE STYLE: IQ Note 1: The condition for GL is the same as Pout except Pin = 28.0dBm. Symbol IDSS Vp VGSO Pout GL ηadd IDSR Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 220mA IGS = -2.2mA Min. -0.1 -5 48.0 Limits Typ. Max. 8 -0.3 49.0 9.5 45 11.5 0.8 -0.5 15.0 1.1 Unit A V V dBm dB % A °C/W VDS = 12V f = 3.6 GHz IDS = 5.0A Pin = 43.0dBm 8.5 - Channel to Case - Edition 1.1 October 2001 1 FLL810IQ-4C L-Band High Power GaAs FET OUTPUT POWER vs. FREQUENCY VDS = 12V, IDS(DC) = 5A IMD & IDS(RF) vs. TOTAL OUTPUT POWER VDS = 12V, IDS(DC) = 5A, fo = 3.6GHz, f1 = 3.61GHz -24 43dBm 38dBm IMD (dBc) 18 16 14 IM3 IDS(RF) (A) 50 -28 -32 -36 -40 48 Output Power (dBm) 46 44 42 40 38 36 34 3.45 3.50 3.55 3.70 12 10 IM5 8 34dBm -44 -48 -52 IDS(RF) 30dBm 6 4 2 26dBm -56 -60 33 34 35 36 37 38 39 40 41 42 43 44 45 Total Output Power (dBm) 3.60 3.65 3.75 Frequency (GHz) OUTPUT POWER & ηadd vs. INPUT POWER VDS = 12V, IDS(DC) = 5A, f = 3.6GHz 48 Output Power (dBm) 46 44 42 40 38 36 34 Pout 50 ηadd ηadd (%) 40 30 20 10 26 28 30 32 34 36 38 40 42 Input Power (dBm) 2 FLL810IQ-4C L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 2500mA S21 S12 MAG ANG MAG ANG 1.973 1.880 1.735 1.784 1.689 1.803 1.949 2.087 2.398 2.627 2.798 2.612 2.173 1.814 1.493 1.222 .999 .849 .735 .681 .666 -113.4 -125.9 -142.2 -153.8 -163.9 -178.8 171.0 154.5 136.9 116.1 88.0 59.6 33.1 13.3 -5.2 -20.4 -34.6 -46.9 -55.8 -67.5 -82.1 .017 .017 .016 .016 .017 .017 .019 .021 .024 .031 .036 .034 .031 .024 .022 .019 .019 .017 .018 .018 .020 -111.7 -134.2 -149.9 -167.5 -176.4 161.0 136.6 119.4 94.7 80.3 48.3 15.7 -8.8 -33.0 -47.8 -59.2 -67.0 -76.4 -86.6 -96.7 -107.9 FREQUENCY (MHZ) 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4200 4300 4400 4500 S11 MAG .499 .617 .703 .761 .793 .801 .783 .747 .644 .492 .315 .397 .603 .743 .825 .878 .910 .937 .949 .953 .956 S22 MAG .796 .773 .752 .729 .714 .678 .656 .604 .566 .506 .468 .504 .558 .580 .559 .535 .483 .418 .376 .343 .386 ANG -103.9 -120.1 -131.7 -141.4 -148.6 -155.5 -162.8 -169.1 -176.8 178.6 -166.2 -130.1 -128.8 -135.6 -143.0 -148.0 -152.6 -156.1 -159.8 -162.7 -165.1 ANG 152.9 151.8 150.1 149.5 148.0 146.2 143.9 140.8 138.8 137.6 143.3 148.1 145.3 136.4 125.9 113.4 97.7 78.8 53.9 18.9 -17.4 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. Download S-Parameters, click here 3 FLL810IQ-4C L-Band High Power GaAs FET Case Style "IQ" 24±0.35 2.5 MIN. 20.4±0.2 1 2 4-0.1 45° 2.4±0.15 4-2.6±0.2 8.0±0.15 17.4±0.2 6 3 4-2.0 2.5 MIN. 4-R1.3±0.2 5 6.0 4 14.9±0.2 15.5±0.2 5.5 Max. 1, 2: Gate 3: Source 4, 5: Drain Unit: mm (inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 1.9±0.2 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI05019M200 4