FLM1011-20F

FLM1011-20F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=43.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 10.7～11.7GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1011-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 93.7 -65 to +175 175 Unit V V W o C C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25°C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=25Ω RG=25Ω Condition Limit Unit V mA mA ≤10 ≤64 ≥-11.2 Limit Typ. 10.8 10 -1.5 43 7.0 6.0 27 -45.0 1.4 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=6480mA VDS=5V, IDS=600mA IGS=-600µA VDS=10V f=10.7 - 11.7 GHz IDS=0.60IDSS(typ) Zs=ZL=50Ω Min. -0.5 -5.0 42 6.0 - Max. 16.2 -3.0 7.2 1.2 1.6 Unit A S V V dBm dB A % dB dBc o Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise f= 11.7 GHz Δf=10MHz, 2-tone Test Pout=31.0dBm (S.C.L.) Channel to Case -42.0 - C /W CASE STYLE: IK ESD Edition 1.2 September 2004 oC 100 10V x Idsr X Rth G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level Class III 2000V　~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW) 1 FLM1011-20F X-Band Internally Matched FET Out Power & P.A.E. vs. Input Power VDS =10V, IDS (DC)=6A,f=11.2GHz 46 44 Output Power [dBm] POWER DERATING CURVE 100 90 80 70 60 50 40 30 20 10 0 0 50 100 150 Case Temperature [oC] 200 70 60 50 40 30 Power Added Efficiency [%] Total Power Dissapation [W] Output Power 42 40 38 36 34 32 24 26 28 30 32 34 36 38 40 Input Power [dBm] P.A.E. 20 10 0 Output Power vs. Frequency VDS=10V, IDS(DC)=6A 45 44 P1dB 38dBm IMD vs. Output Power VDS=10V, IDS(DC)=6A f1=11.7GHz, f2=11.71GHz -20 -25 -30 IM3 & 5 [dBc] 36dBm 34dBm Output Power [dBm] 43 42 41 40 39 38 10.45 -35 -40 -45 -50 -55 -60 -65 -70 IM3 IM5 32dBm 10.7 10.95 11.2 11.45 Frequency [GHz] 11.7 11.95 23 25 27 29 31 33 35 Output Power [dBm] S.C.L. [Single Carrier Level] 37 39 2 FLM1011-20F X-Band Internally Matched FET ■ S-PARAMETER +50j +25j 10. H 2G +90° +100j 11.2GHz 10Ω 25 +10j 12. 2 10. H z 7G +250j 11.2GHz 11.7GHz 10. H Z 7G 0 11. H z 7G 11. H z 7G 11. H Z 2G 11. H 2G ∞ ±180° 3 10.7GHz 10.7 11.7GHz 10.2GHz 2 Scale for |S21| 0° -10j -250j 10.2GHz 10 -25j -50j -100j S 11 S 22 0.2 -90° Scale for |S 12| 12.2GHz 12.2GHz S 12 S 21 F re q. [G H z] 10. 2 10. 3 10. 4 10. 5 10. 6 10. 7 10. 8 10. 9 11 11. 1 11. 2 11. 3 11. 4 11. 5 11. 6 11. 7 11. 8 11. 9 12 12. 1 12. 2 S 11 M AG 0. 521 0. 516 0. 508 0. 503 0. 500 0. 489 0. 479 0. 456 0. 436 0. 399 0. 362 0. 310 0. 258 0. 196 0. 148 0. 138 0. 171 0. 236 0. 296 0. 358 0. 407 VDS=10V, IDS(DC)=6.0A S 21 S 12 ANG M AG 2. 228 2. 263 2. 281 2. 301 2. 334 2. 356 2. 406 2. 450 2. 488 2. 519 2. 542 2. 560 2. 566 2. 556 2. 518 2. 452 2. 366 2. 251 2. 117 1. 983 1. 843 S 22 ANG M AG 0. 267 0. 316 0. 366 0. 408 0. 436 0. 449 0. 459 0. 469 0. 469 0. 457 0. 421 0. 377 0. 328 0. 277 0. 218 0. 143 0. 071 0. 047 0. 083 0. 122 0. 167 ANG -113. 83 -127. 73 -141. 96 -156. 16 -170. 00 175. 80 161. 30 146. 67 131. 08 115. 49 99. 63 83. 45 66. 63 49. 29 31. 92 14. 11 -3. 80 -21. 35 -39. 04 -56. 37 -72. 76 M AG 0. 051 0. 050 0. 051 0. 051 0. 052 0. 053 0. 054 0. 055 0. 058 0. 062 0. 065 0. 072 0. 076 0. 084 0. 091 0. 100 0. 105 0. 115 0. 123 0. 131 0. 140 ANG 57. 91 47. 11 37. 85 30. 57 23. 88 16. 49 8. 08 -0. 73 -9. 20 -17. 21 -26. 15 -36. 80 -49. 42 -62. 34 -74. 53 -88. 71 -115. 34 162. 88 113. 81 87. 31 66. 62 112. 49 98. 68 84. 31 70. 95 56. 68 43. 24 28. 27 13. 87 -2. 48 -18. 79 -36. 36 -55. 88 -77. 82 -105. 52 -141. 44 166. 07 121. 58 89. 39 65. 33 46. 14 29. 27 -125. 01 -136. 72 -150. 92 -165. 30 -178. 71 165. 80 150. 63 133. 33 116. 65 99. 59 80. 88 63. 06 45. 29 26. 43 9. 71 -7. 99 -24. 24 -40. 28 -55. 69 -69. 11 -82. 75 3 FLM1011-20F X-Band Internally Matched FET ■ Package Out Line Case Style : IK PIN ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM1011-20F X-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 5