FLM1011-4F

FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25.0 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 11.7GHz, ∆f = 10MHz 2-Tone Test Pout = 25.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V f = 10.7 ~ 11.7 GHz IDS = 0.65 IDSS(Typ.) ZS = ZL = 50Ω Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 1100mA VDS = 5V, IDS = 85mA IGS = -85µA Min. -0.5 -5.0 35.5 6.0 -44 Limit Typ. Max. 1700 1700 -1.5 36.0 7.0 1100 29 -46 5.0 2600 -3.0 1300 ±0.6 6.0 80 Unit mA mS V V dBm dB mA % dB dBc °C/W °C G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.3 August 2004 1 FLM1011-4F X, Ku-Band Internally Matched FET POWER DERATING CURVE 30 OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 11.7 GHz f2 = 11.71 GHz 2-tone test Total Power Dissipation (W) 36 Output Power (S.C.L.) (dBm) 24 34 32 Pout 18 30 28 26 24 22 IM3 -10 12 6 -30 -40 -50 0 50 100 150 200 Case Temperature (°C) 17 19 21 23 25 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER VDS=10V f = 11.2 GHz Pout VDS=10V P1dB Output Power (dBm) 37 36 34 32 30 28 26 27dBm Output Power (dBm) Pin=30dBm 29dBm 36 28dBm 45 30 ηadd 35 15 20 10.7 10.95 11.2 11.45 11.7 22 24 26 28 30 Input Power (dBm) Frequency (GHz) 2 ηadd (%) IM3 (dBc) -20 FLM1011-4F X, Ku-Band Internally Matched FET S11 S22 +j100 +j25 11.1 10.9 11.3 11.5 11.7 10.7 11.9 11.9 10.9 10.5 GHz 11.9 +j50 +90° SCALE FOR |S12| 0.2 S21 S12 +j10 +j250 11.5 11.3 11.7 11.7 11.5 11.3 11.1 11.1 10.9 10.7 0.1 11.9 10.7 0 10 10.5 GHz 11.7 50Ω 11.5 11.3 11.1 250 180° 1 2 3 4 0° SCALE FOR |S21| 10.5 GHz 10.9 -j10 -j250 10.7 10.5 GHz -j25 -j50 -j100 -90° FREQUENCY (MHZ) 10500 10600 10700 10800 10900 11000 11100 11200 11300 11400 11500 1600 11700 11800 11900 S11 MAG .666 .637 .601 .561 .514 .463 .406 .345 .281 .217 .167 .154 .195 .265 .343 ANG 55.1 46.8 37.9 28.5 19.2 8.9 -2.4 -15.5 -31.3 -51.9 -82.6 -126.2 -165.7 166.8 147.1 S-PARAMETERS VDS = 10V, IDS = 1100mA S21 S12 MAG ANG MAG ANG 2.512 2.515 2.523 2.532 2.544 2.553 2.562 2.570 2.576 2.576 2.570 2.562 2.547 2.526 2.518 -107.2 -116.8 -126.9 -137.1 -147.1 -157.3 -167.9 -178.3 170.8 159.8 148.5 137.1 125.1 112.7 100.3 .044 .047 .051 .054 .059 .059 .063 .069 .071 .075 .082 .084 .087 .090 .090 -99.7 -111.7 -123.6 -136.9 -149.1 -161.3 -172.7 175.9 164.8 152.3 140.7 129.7 117.1 104.3 91.7 S22 MAG .523 .517 .519 .523 .533 .544 .548 .553 .552 .544 .528 .506 .473 .431 .384 ANG 170.5 158.3 146.4 135.4 125.4 116.2 108.1 100.4 93.2 85.7 78.2 70.2 61.1 51.2 40.4 3 FLM1011-4F X, Ku-Band Internally Matched FET Case Style "IA" Metal-Ceramic Hermetic Package 1.5 Min. (0.059) 1 2-R 1.25±0.15 (0.049) 0.1 (0.004) 4 2 3 0.5 (0.020) 1.5 Min. (0.059) 1.8±0.15 (0.071) 3.2 Max. (0.126) 8.1 (0.319) 0.2 Max. (0.008) 1.15 (0.045) 9.7±0.15 (0.382) 13.0±0.15 (0.512) 16.5±0.15 (0.650) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4