FLM1011-6F

FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 31.2 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth f = 11.7GHz, ∆f = 10MHz 2-Tone Test Pout = 25dBm S.C.L. Channel to Case VDS = 10V, IDS = 0.6 IDSS(Typ.), f = 10.7 ~ 11.7 GHz, ZS = ZL = 50Ω Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 1800mA VDS = 5V, IDS = 120mA IGS = -120µA Min. -0.5 -5 36.5 6.5 -42 Limit Typ. Max. 2800 2350 -1.5 37.5 7.5 1800 28 -45 4.0 4200 -3.0 2100 ±0.6 4.5 Unit mA mS V V dBm dB mA % dB dBc °C/W CASE STYLE: IA G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.4 August 2004 1 FLM1011-6F X, Ku-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 11.7 GHz 32 f2 = 11.71 GHz 2-tone test 30 28 26 24 22 IM3 Total Power Dissipation (W) 40 Output Power (S.C.L.) (dBc) Pout 30 -20 -30 -40 -50 20 10 0 50 100 150 200 15 17 19 21 23 25 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS=10V P1dB OUTPUT POWER vs. INPUT POWER 38 Output Power (dBm) Pin=32dBm VDS=10V f = 11.2 GHz 37 36 34 32 30 28 26 20 22 24 26 28 30 32 ηadd Pout Output Power (dBm) 35 33 31 29 27 10.8 11.0 11.2 11.4 P1dB 28dBm 26dBm 24dBm 22dBm 20dBm 40 30 20 10 11.6 Frequency (GHz) Input Power (dBm) 2 ηadd (%) IM3 (dBc) FLM1011-6F X, Ku-Band Internally Matched FET S11 S22 +j100 +j25 10.9 10.7 11.1 11.3 11.5 11.5 11.7 11.7 11.9 11.9 250 11.3 11.1 11.5 11.7 +j50 +90° S21 S12 +j250 10.7 11.1 10.9 +j10 10.5 GHz 10.9 10.9 10.7 11.1 11.3 50Ω 11.9 11.3 11.5 11.7 11.9 1 2 3 4 5 10.7 10.5 GHz 0 10 10.5 GHz 180° 10.5 GHz SCALE FOR |S21| SCALE FOR |S12| 0° -j10 -j250 0.1 -j25 -j50 -j100 0.2 -90° FREQUENCY (MHZ) 10500 10600 10700 10800 10900 11000 11100 11200 11300 11400 11500 11600 11700 11800 11900 S11 MAG .655 .639 .621 .601 .580 .555 .523 .488 .443 .397 .350 .311 .282 .259 .252 ANG 149.3 139.8 130.3 120.5 109.7 98.4 85.9 72.6 58.8 42.8 27.2 9.3 -9.1 -30.2 -51.0 S-PARAMETERS VDS = 10V, IDS = 1800mA S21 S12 MAG ANG MAG ANG 2.654 2.766 2.896 2.899 2.855 2.760 2.685 2.683 2.693 2.736 2.740 2.785 2.780 2.663 2.469 175.1 167.0 157.7 146.9 137.6 128.8 121.5 114.7 107.1 99.3 90.6 82.0 70.9 58.7 49.1 .037 .039 .049 .050 .060 .066 .078 .086 .091 .097 .099 .103 .103 .108 .107 160.5 151.3 135.2 127.2 113.5 104.6 93.9 83.3 74.1 62.7 53.0 41.7 35.4 25.6 18.6 S22 MAG .230 .245 .264 .270 .293 .284 .290 .281 .282 .286 .302 .315 .348 .372 .396 ANG 168.6 151.6 136.9 123.0 111.3 96.4 83.8 67.2 49.6 29.7 11.4 -5.8 -22.4 -36.8 -48.2 3 FLM1011-6F X, Ku-Band Internally Matched FET Case Style "IA" Metal-Ceramic Hermetic Package 1.5 Min. (0.059) 1 2-R 1.25±0.15 (0.049) 0.1 (0.004) 4 2 3 0.5 (0.020) 1.5 Min. (0.059) 1.8±0.15 (0.071) 3.2 Max. (0.126) 8.1 (0.319) 0.2 Max. (0.008) 1.15 (0.045) 9.7±0.15 (0.382) 13.0±0.15 (0.512) 16.5±0.15 (0.650) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4