FLM1213-12F

FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1213-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 57.6 -65 to +175 175 Unit V V W °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 13.2GHz, ∆f = 10MHz 2-Tone Test Pout = 28dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V f = 12.7 ~ 13.2 GHz IDS = 0.6 IDSS(Typ.) ZS = ZL = 50Ω Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 3600mA VDS = 5V, IDS = 300mA IGS = -340µA Min. -0.5 -5 39.5 4.5 -42 Limit Typ. Max. 6000 5000 -1.5 40.5 5.5 3600 24 -45 2.3 9000 -3.0 4500 ±0.6 2.6 80 Unit mA mS V V dBm dB mA % dB dBc °C/W °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with gate resistance of 50Ω. G.C.P.: Gain Compression Point Edition 1.3 August 2004 1 FLM1213-12F X, Ku-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V 35 f1 = 13.2 GHz f2 = 13.21 GHz 33 2-tone test 31 29 27 25 23 21 0 50 100 150 200 15 17 19 21 23 25 27 29 IM3 Pout Total Power Dissipation (W) 45 Output Power (S.C.L.) (dBc) 60 -10 -30 -40 -50 15 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY Pin = 36dBm OUTPUT POWER vs. INPUT POWER VDS = 10V f = 12.95 GHz 40 Output Power (dBm) 40 32dBm 38 30dBm 36 28dBm 34 26dBm 32 VDS = 10V P1dB 12.7 12.8 12.9 13.0 13.1 13.2 Output Power (dBm) Pout 38 36 34 32 30 20 10 ηadd 26 28 30 32 34 36 Frequency (GHz) Input Power (dBm) 2 ηadd (%) IM3 (dBc) 30 -20 FLM1213-12F X, Ku-Band Internally Matched FET +j50 +j100 +j25 S11 S22 +90° SCALE FOR |S12| 0.2 S21 S12 +j250 +j10 13.3 13.4 GHz 13.2 13.4 GHz 13.1 13.2 50Ω 100 13.0 12.9 12.8 12.8 12.7 12.6 12.7 12.5 12.5 0.1 0 10 250 180° 5 4 3 2 1 12.5 12.7 12.5 12.6 12.8 12.7 13.0 12.8 12.9 13.0 13.1 SCALE FOR |S21| 0° -j10 -j250 13.4 GHz 13.4 GHz 13.3 13.2 13.2 -j25 -j50 -j100 -90° S-PARAMETERS VDS = 10V, IDS = 3600mA FREQUENCY (MHZ) 12500 12600 12700 12800 12900 13000 13100 13200 13300 13400 S11 MAG .511 .474 .435 .400 .360 .324 .290 .249 .212 .172 S21 ANG -86.9 -101.9 -118.0 -134.6 -152.2 -171.0 168.5 147.6 125.2 100.6 S12 ANG 16.5 4.5 -8.2 -21.1 -34.1 -47.9 -62.2 -77.2 -91.4 S22 ANG -2.7 -15.2 -27.4 -40.6 -54.4 -68.6 -82.8 -97.1 -111.6 -126.6 MAG 1.787 1.891 1.995 2.092 2.192 2.283 2.341 2.386 2.369 2.343 MAG .080 .089 .098 .104 .112 .120 .127 .132 .136 .134 MAG .531 .497 .460 .414 .362 .298 .229 .164 .127 .169 ANG -110.8 -121.6 -132.6 -144.1 -158.1 -175.0 164.7 133.3 82.9 34.4 -106.4 3 FLM1213-12F X, Ku-Band Internally Matched FET Case Style "IB" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 2-R 1.6±0.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.6±0.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.9±0.2 (0.508) 12.0 (0.422) 17.0±0.15 (0.669) 21.0±0.15 (0.827) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4