FLM1414-15F

FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=26%(Typ.) ・Broad Band: 14.0～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1414-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 75 -65 to +175 175 Unit V V W o C C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=50Ω RG=50Ω Condition Limit ≦10 ≦48 ≧-6.6 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Test Conditions VDS=5V , VGS=0V VDS=5V , IDS=3600mA VDS=5V , IDS=300mA IGS=-340µA VDS=10V f=14.0 - 14.5 GHz IDS=0.6IDSS(typ) Zs=ZL=50Ω Min. -0.5 -5.0 41.5 5.0 -42.0 Limit Typ. 7.2 6700 -1.5 42.0 6.0 4200 26 -45.0 Max. 10.0 -3.0 5000 1.2 - Unit A mS V V dBm dB mA % dB dBc Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise f=14.5 GHz Δf=10MHz,2-Tone Test Pout=30.0dBm(S.C.L.) Channel to Case Rth ∆ Tch - 1.8 - 2.0 80 o C /W CASE STYLE: IB ESD Edition 1.4 May 2004 oC 10V x Idsr X Rth G.C.P.:Gain Compression Point , S.C.L.:Single Carrier Level Class III 2000V~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) 1 FLM1414-15F X,Ku-Band Internally Matched FET POWER DERATING CURVE 80 Total Power Dissipation [W] 45 OUTPUT POWER , EFFICIENCY vs. INPUT POWER 100 90 Output Power Level [dBm] 60 80 40 40 60 35 50 40 30 30 20 10 20 0 0 50 100 150 200 25 20 25 30 35 40 0 Case Temperature [ oC] Input Power Level [dBm] OUTPUT POWER vs. FREQUENCY VDS=10V, IDS=0.65IDSS 45 IMD vs OUTPUT POWER VDS=10V, IDS=0.65IDSS f1=14.50GHz, f2=14.51GHz -36 Intermodulation Distortion [dBc] -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 24 25 26 27 28 29 30 31 32 33 34 Output Power [dBm] 40 IM 3 35 30 IM 5 25 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 frequency [GHz] Pin=23dBm Pin=33dBm Pin = 27dBm Psat Pin=31dBm P1dB Output Power (S.C.L.) [dBm] S.C.L :Single Carrier Level 2 Efficiency [%] 70 FLM1414-15F X,Ku-Band Internally Matched FET ■ S-PARAMETER +50j +25j 14. 25 +90° +100j 10 Ω 25 +1 0j 14G H z 14. 5 +250 j 0 14G H z ∞ ± 180° 3 1 Scale for |S 21| Scale for |S 12| 0° -10j -25 0j 14GH z 14.5 0.4 14.25 -25j -50 j -100j S 11 S 22 0.6 -90° S 12 S 21 VDS=10V, IDS=4355mA Freq [GHz] 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 S11 MAG ANG 0.883 78.074 0.842 6.384 0.805 -68.624 0.729 -155.313 0.553 118.032 0.301 14.254 0.193 -169.602 0.330 57.246 0.373 -69.708 0.400 -173.403 0.529 119.056 S21 MAG ANG 0.679 -162.875 0.812 115.730 1.046 32.823 1.503 -65.968 1.922 -168.885 2.153 84.943 2.182 -30.677 1.987 -141.198 1.440 104.525 0.733 2.596 0.486 -75.751 S12 MAG ANG 0.023 158.196 0.029 77.861 0.040 -0.870 0.064 -91.628 0.092 170.080 0.108 68.684 0.114 -35.708 0.113 -134.062 0.082 126.406 0.045 48.953 0.034 -13.903 S22 MAG ANG 0.757 36.902 0.708 -38.816 0.612 -118.143 0.455 143.005 0.308 23.310 0.285 -105.214 0.308 146.159 0.243 62.332 0.118 45.259 0.247 10.815 0.293 -37.756 3 FLM1414-15F X,Ku-Band Internally Matched FET CASE STYLE: IB PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM1414-15F X,Ku-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 5