FLM1415-3F

FLM1415-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 34.5dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -46dBc@Po = 23.5dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1415-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 15.3GHz, ∆f = 10MHz 2-Tone Test Pout = 23.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V, IDS = 0.6 IDSS(Typ.), f = 14.5 ~ 15.3 GHz, ZS = ZL = 50Ω Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 900mA VDS = 5V, IDS = 70mA IGS = -70µA Min. -0.5 -5.0 33.5 5.0 -42 Limit Typ. Max. 1400 1400 -1.5 34.5 5.5 900 23 -45 5.0 2100 -3.0 1100 ±0.6 6.0 66 Unit mA mS V V dBm dB mA % dB dBc °C/W °C G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.4 August 2004 1 FLM1415-3F Internally Matched Power GaAs FET POWER DERATING CURVE 30 OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 15.3 GHz f2 = 15.31 GHz 2-tone test Total Power Dissipation (W) 31 Output Power (S.C.L.) (dBc) -10 20 29 Pout 27 -20 -30 10 25 23 21 IM3 -40 -50 0 50 100 150 200 16 18 20 22 24 26 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY 37 OUTPUT POWER vs. INPUT POWER VDS=10V f = 14.93 GHz Pout Output Power (dBm) Pin=31dBm Output Power (dBm) 36 35 34 VDS=10V P1dB 36 34 32 27dBm 32 31 30 29 14.4 14.6 14.8 15.0 25dBm 28 26 24 18 20 22 24 ηadd 30 20 10 23dBm 15.2 15.4 26 28 30 32 Frequency (GHz) Input Power (dBm) 2 ηadd (%) 33 30 40 IM3 (dBc) FLM1415-3F Internally Matched Power GaAs FET +j50 +j100 +j25 14.3 GHz S11 S22 +90° S21 S12 +j250 +j10 15.0 14.7 15.3 14.3 GHz 14.5 14.5 14.7 14.7 14.3 GHz 15.5 100 14.5 0 10 15.5 25 14.5 180° 5 4 3 2 1 15.0 15.3 15.5 15.5 15.3 15.0 0° SCALE FOR |S21| SCALE FOR |S12| 15.3 14.3 GHz 15.0 14.7 -j10 -j250 0.1 -j25 -j50 -j100 0.2 -90° FREQUENCY S11 (MHZ) MAG ANG 14300 14400 14500 14600 14700 14800 14900 15000 15100 15200 15300 15400 15500 .214 .128 .065 .089 .151 .213 .255 .283 .292 .290 .263 .230 .196 -70.6 -87.9 -142.8 144.4 117.3 102.1 91.1 80.1 69.8 57.8 43.8 25.7 0.2 S-PARAMETERS VDS = 10V, IDS = 900mA S21 S12 MAG ANG MAG ANG 1.917 1.987 2.045 2.074 2.095 2.099 2.092 2.097 2.078 2.071 2.039 1.993 1.941 69.6 58.3 47.0 35.4 23.2 11.7 0.1 -11.6 -23.8 -36.3 -48.8 -61.7 -74.8 .099 .104 .110 .110 .112 .114 .119 .119 .123 .122 .124 .121 .120 75.2 63.1 52.4 41.5 30.2 18.1 7.9 -3.6 -18.6 -28.9 -40.2 -54.5 -68.2 S22 MAG .680 .645 .603 .554 .513 .467 .421 .379 .331 .304 .291 .310 .360 ANG 2.0 -5.2 -13.4 -21.3 -31.0 -40.2 -51.0 -63.2 -77.6 -97.3 -121.3 -143.1 -160.4 3 FLM1415-3F Internally Matched Power GaAs FET Case Style "IA" Metal-Ceramic Hermetic Package 1.5 Min. (0.059) 1 2-R 1.25±0.15 (0.049) 0.1 (0.004) 4 2 3 0.5 (0.020) 1.5 Min. (0.059) 1.8±0.15 (0.071) 3.2 Max. (0.126) 8.1 (0.319) 0.2 Max. (0.008) 1.15 (0.045) 9.7±0.15 (0.382) 13.0±0.15 (0.512) 16.5±0.15 (0.650) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4