FLM6472-25F

FLM6472-25F FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM6472-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 93.7 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 64.0 and -11.2 mA respectively with gate resistance of 25Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IK Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 7.2 GHz, ∆f = 10 MHz 2-Tone Test Pout = 33.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 6.4 ~ 7.2 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 6500mA VDS = 5V, IDS = 500mA IGS = -500µA Min. -0.5 -5.0 43.5 8.5 -44 Limit Typ. Max. 10 10 -1.5 44.5 9.5 15 -3.0 Unit A S V V dBm dB mA % dB dBc °C/W °C 6500 7600 38 -46 1.4 ±0.6 1.6 100 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.2 August 2004 1 FLM6472-25F C-Band Internally Matched FET POWER DERATING CURVE 100 39 80 OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 7.2 GHz f2 = 7.21 GHz 2-tone test -30 Pout Output Power (S.C.L.) (dBm) Total Power Dissipation (W) 37 35 33 31 60 -35 -40 IM3 40 29 27 25 -45 -50 -55 20 0 50 100 150 200 20 22 24 26 28 30 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY 46 OUTPUT POWER vs. INPUT POWER VDS=10V f = 6.8 GHz Pout Output Power (dBm) VDS=10V P1dB 46 45 44 43 42 41 40 6.4 6.6 6.8 7.0 Output Power (dBm) Pin=36dBm 44 42 40 38 36 34dBm 45 ηadd IM3 (dBc) 30 15 0 32dBm 30dBm 7.2 25 27 29 31 33 35 37 Frequency (GHz) Input Power (dBm) 2 ηadd (%) FLM6472-25F C-Band Internally Matched FET +j50 +j25 +j100 S11 S22 +90° S21 S12 6.2 GHz 7.2 6.4 6.6 6.8 6.8 250 7.0 6.4 6.6 6.8 6.6 +j10 7.4 6.2 GHz 6.4 7.2 +j250 7.0 7.0 7.2 7.4 1 7.4 0 25 6.6 50Ω 7.0 6.8 180° 6.4 6.2 GHz 2 3 4 SCALE FOR |S21| 0° 7.4 -j10 -j250 6.2 GHz 0.1 -j25 -j50 -j100 0.2 -90° S-PARAMETERS VDS = 10V, IDS = 6500mA FREQUENCY (MHZ) 6200 6300 6400 6500 6600 6700 6800 6900 7000 7100 7200 7300 7400 S11 MAG .456 .444 .426 .397 .358 .312 .254 .183 .114 .104 .195 .325 .454 S21 ANG 42.1 33.6 24.4 15.3 4.4 -6.6 -21.0 -40.2 -77.1 -149.7 164.3 138.9 120.5 S12 ANG MAG .057 .058 .061 .064 .069 .071 .076 .079 .081 .082 .076 .073 .069 SCALE FOR |S12| 7.2 S22 ANG -169.6 179.0 167.8 156.1 144.0 131.3 117.2 101.6 84.6 68.7 53.1 32.7 19.4 MAG 3.198 3.139 3.089 3.018 3.044 3.038 3.063 3.101 3.148 3.164 3.139 3.042 2.871 MAG .510 .512 .512 .513 .512 .502 .488 .466 .437 .401 .354 .298 .238 ANG 71.7 66.4 59.8 51.4 41.3 28.9 14.6 -1.8 -19.7 -37.0 -55.3 -74.2 -93.9 -129.2 -143.1 -154.7 -167.8 178.4 165.6 151.7 136.9 121.1 105.9 88.1 69.6 50.6 3 FLM6472-25F C-Band Internally Matched FET Case Style "IK" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 1 0.1 (0.004) 2 0.6 (0.024) 14.9 (0.587) 2.0 Min. (0.079) 4-R 1.3±0.15 (0.051) 3 2.4±0.15 (0.094) 5.5 Max. (0.217) 1.4 (0.055) 17.4±0.3 (0.685) 8.0±0.2 (0.315) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) 20.4±0.3 (0.803) 24±0.5 (0.945) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4