FLM7785-6F

FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM7785-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 31.2 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.8 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 8.5 GHz, ∆f = 10 MHz 2-Tone Test Pout = 27.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 7.7 ~ 8.5 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =1200mA VDS = 5V, IDS =120mA IGS = -150µA Min. -0.5 -5 37.5 7.5 -44 Limit Typ. Max. 2700 4050 2500 -1.5 38.5 8.5 -3.0 Unit mA mS V V dBm dB mA % dB dBc °C/W °C 1750 2250 31 -46 4.0 ±0.6 4.8 80 CASE STYLE: IB G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.1 August 2004 1 FLM7785-6F C-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 8.5 GHz f2 = 8.51 GHz 2-tone test Pout -15 40 Output Power (S.C.L.) (dBm) Total Power Dissipation (W) 33 31 29 27 25 23 21 30 10 IM3 -35 -45 -55 0 50 100 150 200 12 14 16 18 20 22 24 26 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS=10V 41 P1dB 40 Pin=31dBm OUTPUT POWER vs. INPUT POWER 40 Output Power (dBm) Output Power (dBm) 38 36 34 32 VDS=10V f = 8.1 GHz Pout 39 38 37 36 35 7.7 7.9 8.1 8.3 25dBm 29dBm 27dBm 30 ηadd 15 0 30 28 8.5 20 22 24 26 28 30 32 Frequency (GHz) Input Power (dBm) 2 ηadd (%) 45 IM3 (dBc) 20 -25 FLM7785-6F C-Band Internally Matched FET S11 S22 +j100 7.7 7.7 7.5 GHz 7.9 +j50 +j25 +90° SCALE FOR |S12| 0.2 S21 S12 8.1 8.3 +j10 7.5 GHz 7.9 8.1 50Ω 8.3 8.5 +j250 8.5 8.7 8.5 8.3 0.1 8.7 8.5 8.7 250 0 25 180° 8.3 8.1 7.9 7.7 1 7.5 GHz 2 3 4 SCALE FOR |S21| 0° 8.7 8.1 -j10 -j250 7.9 7.7 7.5 GHz -j25 -j50 -j100 -90° S-PARAMETERS VDS = 10V, IDS = 1200mA FREQUENCY (MHZ) 7500 7600 7700 7800 7900 8000 8100 8200 8300 8400 8500 8600 8700 S11 MAG .612 .574 .537 .494 .448 .399 .346 .294 .249 .222 .236 .287 .364 S21 ANG 124.2 112.9 101.5 89.7 77.2 63.2 47.3 27.5 1.9 -31.1 -69.1 S12 ANG -84.5 -96.9 S22 ANG MAG .452 .489 .520 .546 .568 .579 .580 .571 .554 .525 .481 .427 .369 MAG 3.104 3.046 2.997 2.943 2.905 2.873 2.849 2.828 2.813 2.798 2.767 2.708 2.620 MAG 0.032 0.038 0.042 0.047 0.053 0.056 0.062 0.065 0.070 0.072 0.076 0.077 0.078 ANG 115.9 102.2 90.7 80.7 71.9 64.3 57.5 51.8 46.5 42.0 38.4 36.4 36.7 -104.5 -121.7 -138.3 -151.5 -164.9 -177.4 169.5 156.8 145.4 131.9 118.1 105.0 89.9 -109.3 -121.5 -133.3 -145.3 -157.6 -169.9 177.2 163.8 149.8 135.3 120.3 -102.3 -128.8 3 FLM7785-6F C-Band Internally Matched FET Case Style "IB" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 2-R 1.6±0.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.6±0.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.9±0.2 (0.508) 12.0 (0.422) 17.0±0.15 (0.669) 21.0±0.15 (0.827) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4