FLM7785-8F

FLM7785-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM7785-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 42.8 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 8.5 GHz, ∆f = 10 MHz 2-Tone Test Pout = 28.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 7.7 ~ 8.5 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2200mA VDS = 5V, IDS = 170mA IGS = -170µA Min. -0.5 -5.0 39.0 7.5 -44 Limit Typ. Max. 3400 5200 3400 -1.5 39.5 8.5 -3.0 Unit mA mS V V dBm dB mA % dB dBc °C/W °C 2200 2600 34 -46 3.0 ±0.6 3.5 80 CASE STYLE: IB G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.4 August 2004 1 FLM7785-8F C-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 8.5 GHz f2 = 8.51 GHz 2-tone test Pout Total Power Dissipation (W) Output Power (S.C.L.) (dBm) 40 34 32 30 28 26 24 50 100 150 200 30 -20 -30 -40 -50 10 IM3 0 Case Temperature (°C) 14 16 18 20 22 24 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS=10V P1dB OUTPUT POWER vs. INPUT POWER VDS=10V f = 8.1 GHz 41 Output Power (dBm) 40 39 38 37 36 35 7.7 7.9 8.1 8.3 Pin=31.5dBm 29.5dBm 42 40 38 36 34 32 30 Output Power (dBm) Pout 45 30 15 0 22 24 26 28 30 32 27.5dBm 25.5dBm ηadd 8.5 Frequency (GHz) Input Power (dBm) 2 ηadd (%) IM3 (dBc) 20 FLM7785-8F C-Band Internally Matched FET S11 S22 +j100 7.7 7.6 7.8 7.9 8.0 7.7 7.9 8.7 8.1 7.6 7.5 GHz 8.3 8.2 7.5 GHz 8.3 8.6 8.4 25 8.5 8.5 8.7 7.5 GHz 7.8 7.7 7.9 8.2 8.1 250 7.9 8.0 8.1 +j50 +j25 +90° S21 S12 +j10 +j250 7.5 GHz 0 180° 0.2 0.1 8.3 SCALE FOR |S12| 1 8.7 0° 8.3 8.4 SCALE FOR |S21| -j10 -j250 2 8.7 3 4 8.5 8.6 8.5 -j25 -j50 -j100 -90° S-PARAMETERS VDS = 10V, IDS = 2200mA FREQUENCY (MHZ) 7500 7600 7700 7800 7900 8000 8100 8200 8300 8400 8500 8600 8700 S11 MAG .402 .428 .440 .440 .428 .395 .342 .257 .132 .038 .248 .462 .634 S21 ANG MAG 3.423 3.344 3.271 3.219 3.196 3.204 3.244 3.299 3.345 3.324 3.168 2.817 2.337 S12 ANG 133.7 119.5 105.2 90.5 75.9 60.8 44.5 26.9 7.5 -14.4 -38.6 -63.6 -87.2 S22 ANG 106.1 93.1 79.1 64.6 51.4 39.0 21.9 6.3 -11.8 -33.4 -56.7 -81.0 -104.4 MAG .094 .091 .090 .089 .088 .087 .088 .091 .093 .095 .091 .083 .068 MAG .331 .340 .343 .348 .345 .347 .354 .352 .331 .284 .186 .069 .147 ANG 95.4 88.5 82.8 77.7 72.8 67.1 61.1 52.6 41.7 27.2 0.0 -59.7 -164.2 153.9 137.7 123.0 110.3 97.9 86.5 73.5 61.1 46.2 -156.8 -171.2 169.6 150.6 3 FLM7785-8F C-Band Internally Matched FET Case Style "IB" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 2-R 1.6±0.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.6±0.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.9±0.2 (0.508) 12.0 (0.422) 17.0±0.15 (0.669) 21.0±0.15 (0.827) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4