FLU10ZM

FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm(typ.) ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item Drain-Source Voltage Gate-Soutce Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg TCH Rating 15 -5 6.9 -55 to +150 175 Unit V V W ℃ ℃ Recommended Operating Condition (Case Temperature Tc=25℃) Item DC Input Voltage Channel Temperature Forward Gate Current Reverse Gate Current Gate Resistance Symbol VDS Tch Igsf Igsr Rg Condition ≤ 10 ≤ 145 ≤ 4.8 ≥-0.5 400 Unit V ℃ mA mA Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB Rth Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=200mA VDS=5V, IDS=15mA IGS=-15uA VDS=10V, f=2.0GHz, IDS=0.6IDSS(Typ.) Channel to Case Min. -1.0 -5 28.5 12.0 Limit Typ. 300 150 -2.0 29.5 13.0 15 Max. 450 -3.5 18 Unit mA mS V V dBm dB ℃/W G.C.P.:Gain Compression Point CASE STYLE: ZM Note 1: Product supplied to this specification are 100% DC performance tested. Note 2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot. Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested. ESD Class Ⅱ 500～ 1999 V Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kΩ) Edition 1.1 May 2003 1 FLU10ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 7 Total Power Dissipation [W] 6 5 4 3 2 1 0 0 50 100 Case Temperature [℃ ] 150 200 OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER f = 2.0GHz, VDS = 10V, IDS = 0.6IDSS 34 32 28 26 24 22 20 18 16 14 2 4 6 8 10 12 14 16 18 20 Input Power [dBm] P.A.E. 30 Output Power [dBm] 100 80 Pout 60 40 20 0 2 Power Added Efficiency [%] FLU10ZM L-Band Medium & High Power GaAs FET ■ S-PARAMETER +50 j +25 j 10 Ω 25 Ω +90° +1 00j +10j 50 Ω +2 50j 1.0 2.0GHz 3. 0 100 Ω 0 2. H z 0G 3. 0 1. 0 2. H z 0G ∞ ±180° 15 9 Scale for |S 21| 3.0 0° -10j 1. 0 -250 j 0.4 -25j -50j -100 j S 11 S 22 0.6 -90° Scale for |S 12| S 12 S 21 VDS = 10V, IDS = 180mA Freq [GHz 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 S11 MAG 0.88 0.78 0.75 0.72 0.71 0.69 0.73 0.76 0.79 0.80 ANG -82.82 -128.10 -153.80 -174.63 165.70 145.11 126.72 112.29 100.63 93.48 MAG 9.02 5.90 4.31 3.45 2.85 2.41 2.05 1.74 1.48 1.25 S21 ANG 126.68 96.81 76.65 60.18 43.48 27.24 11.34 -3.63 -17.87 -30.30 MAG 0.05 0.06 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 S12 ANG 48.61 27.98 19.62 13.94 8.34 4.74 -1.38 -7.63 -13.21 -16.94 MAG 0.37 0.30 0.27 0.25 0.22 0.20 0.19 0.22 0.27 0.34 S22 ANG -52.39 -78.22 -91.11 -101.36 -114.34 -128.63 -153.74 179.95 161.06 146.70 3 FLU10ZM L-Band Medium & High Power GaAs FET OUTPUT POWER & DRAIN CURRENT vs. INPUT POWER with a wide band tuning condition. @ VDS = 10V, IDS = 150mA, VGS = -0.9V Pin-Pout, Ids & P.A.E. @f=1.8GHz 35 30 25 20 15 10 4 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] Pout Ids[mA] P.A.E. 300 260 220 180 140 100 Pin-Pout, Ids & P.A.E. @f=2.0GHz 35 Drain Current [mA] 30 25 20 15 10 4 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] Pout Ids[mA] P.A.E. 300 260 220 180 140 100 Output Power [dBm] Output Power [dBm] 75 Power Added Efficiency[%] Drain Current [mA] 75 Power Added Efficiency[%] 50 50 25 25 0 0 OUTPUT POWER vs. FREQUENCY Pin-Pout, Ids & P.A.E. @f=2.2GHz 35 Pout Ids[mA] P.A.E. 300 35 Output Power [dBm] 30 260 Drain Current [mA] Output P ow er [dB m] 30 Pin=25dBm Pin=20dBm P1dB Pin=15dBm 25 220 75 Power Added Efficiency[%] 25 20 180 50 Pin=10dBm 20 15 140 25 Pin=5dBm 15 1.7 1.9 2.1 2.3 10 4 6 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] 100 0 Frequency[GHz] 4 FLU10ZM L-Band Medium & High Power GaAs FET @ VDS = 10V, IDS = 150mA, VGS = -0.9V W-CDMA 2-CARRIER IMD(ACLR) IMD vs OUTPUT POWER(2-tone) -25 Intermodulation Distortion [dBc] -30 -35 -40 -45 -50 -55 -60 -65 -70 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power(2-tone) [dBm] @∆f=+5MHz 1.8GHz 2.0GHz 2.2GHz -25 -30 ACLR(IMD) [dBc] -35 -40 -45 -50 -55 -60 15 16 17 18 19 20 21 22 23 24 25 2-tone total Output Power [dBm] IM3-L IM3-U IM5-L IM5-U *fo=2.1325GHz *f1=2.1475GHz IM3 IM5 W-CDMA SINGLE CARRIER ACLR *fo=2.1325GHz -25 -30 -35 ACLR [dBc] -40 -45 -50 -55 -60 15 16 17 18 19 20 21 22 23 24 25 26 Output Power[dBm] -5MHz +5MHz -10MHz +10MHz W-CDMA SINGLE CARRIER CCDF AND GAIN *fo=2.1325GHz 15 14 13 CCDF,Gain [dB] 12 11 10 9 8 7 6 5 12 17 22 Output Power [dBm] 0.01% Peak Gain Note : *All signals are W-CDMA modulated at 3GPP3.4.12-00 BS-1 64ch non clipping. All data was obtained using the board tuned for wide band tuning (1.8 GHz to 2.3 GHz). 5 FLU10ZM L-Band Medium & High Power GaAs FET ■ Recommended Bias Circuit and Internal Block Diagram (wide band tuning condition) εr=3.5, t=0.8 Unit : mm * Board was tuned for wide band performance with data shown on pages 4 and 5. 6 FLU10ZM L-Band Medium & High Power GaAs FET ■ Package Outline 7 FLU10ZM L-Band Medium & High Power GaAs FET For further information please contact : FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. . FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0202M200 8