FLU35XM

FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 15 -65 to +175 +175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with gate resistance of 100Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Power Added Efficiency Thermal Resistance Case Style: XM Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested. Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth Conditions VDS = 5V, VGS=0V VDS = 5V, IDS=800mA VDS = 5V, IDS=60mA IGS = -60µA VDS = 10V f=2.0 GHz IDS=0.6IDSS Channel to Case Min. -1.0 -5 34.5 11.5 - Limits Typ. Max. 1200 1800 600 -2.0 35.5 12.5 46 7.5 -3.5 10 Unit mA mS V V dBm dB % °C/W G.C.P.: Gain Compression Point Edition 1.2 July 1999 1 FLU35XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 16 Total Power Dissipation (W) VGS =0V -0.5V 800 -1.0V 400 -1.5V -2.0V 0 50 100 150 200 0 2 4 6 8 10 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Drain Current (mA) 12 1200 8 4 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.6IDSS f = 2.0 GHz 50 Pout Output Power (dBm) 36 34 32 30 28 26 30 ηadd 20 10 16 18 20 22 24 26 Input Power (dBm) 2 ηadd (%) 40 FLU35XM L-Band Medium & High Power GaAs FET +j50 +j100 +j25 S11 S22 +90° 0.5 GHz S21 S12 +j10 3 5 4 +j250 1 2 5 25 0.5 GHz 3 2 1 50Ω 100 250 0.5 GHz 5 .05 0.1 0 2 4 180° 8 6 4 2 32 5 0° SCALE FOR |S21| 1 SCALE FOR |S12| -j10 0.5 GHz -j250 -j25 -j50 -j100 -90° FREQUENCY (MHZ) S11 MAG ANG S-PARAMETERS VDS = 10V, IDS = 720mA S21 S12 MAG ANG MAG ANG S22 MAG ANG 100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 .957 .894 .902 .899 .897 .896 .892 .883 .871 .858 .830 -66.2 -147.0 -167.1 -176.1 177.8 172.9 168.1 163.4 158.6 153.9 148.8 22.578 7.757 3.947 2.592 1.897 1.492 1.223 1.041 .921 .839 .790 145.6 94.1 71.6 55.8 41.9 29.5 17.9 7.0 -3.9 -14.8 -26.5 .014 .023 .023 .023 .022 .021 .022 .023 .026 .029 .034 60.6 17.4 5.2 1.5 -1.0 3.9 1.5 .3 5.3 2.9 -1.0 .186 .386 .455 .517 .578 .634 .679 .714 .742 .766 .786 -125.7 -154.8 -157.0 -157.1 -158.9 -161.3 -164.7 -168.0 -171.7 -175.4 -179.4 Download S-Parameters, click here 3 FLU35XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic Package 2.865 (0.112) 2.265 (0.089) 2.0±0.15 3.8±0.15 (0.150) 0.5 (0.020) 3.35 (0.132) 2 0.7 (0.028) 4.4±0.15 (0.173) 0.5 (0.020) 45° 3.13±0.15 0.7 (0.028) 6.3 (0.248) 1.7±0.2 (0.067) 0.15±0.05 (0.006) 1. Gate 2. Source 3. Drain Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 4.0±0.15 (0.159) 4.2±0.1 (0.165) 1 3