FLX107MH-12

FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 7.5 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with gate resistance of 500Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance CASE STYLE: MH Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 250mA VDS = 5V, IDS = 20mA IGS = -20µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12.5 GHz Channel to Case Min. -1.0 -5 29.0 6.5 Limit Typ. Max. 400 200 -2.0 30.0 7.5 33 15 600 -3.5 20 Unit mA mS V V dBm dB % °C/W G.C.P.: Gain Compression Point Edition 1.1 August 1999 1 FLX107MH-12 X, Ku Band Power GaAs FET POWER DERATING CURVE 10 Total Power Dissipation (W) 8 6 4 2 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500 400 Drain Current (mA) 300 200 100 VGS =0V -0.5V -1.0V -1.5V -2.0V 0 50 100 150 200 0 2 4 6 8 10 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER f = 12.5GHz IDS ≈ 0.6 IDSS VDS=10V VDS=8.5V Pout P1dB & ηadd vs. VDS f = 12.5 GHz IDS ≈ 0.6 IDSS Output Power (dBm) 31 P1dB (dBm) 30 29 28 27 26 8 9 10 P1dB ηadd 30 28 26 24 22 ηadd (%) 30 20 10 ηadd 40 20 14 16 18 20 22 24 Input Power (dBm) Drain-Source Voltage (V) 2 ηadd (%) 40 FLX107MH-12 X, Ku Band Power GaAs +j50 +j25 13 12 S11 S22 +j100 8 9 +90° S21 S12 14GHz +j10 11 10 14GHz 10 8 13 25 50Ω 100 250 11 10 +j250 11 9 8 10 12 12 13 13 14GHz 14GHz 11 9 10 8 0 9 180° .04 .02 .04 .06 .08 0° SCALE FOR |S12| SCALE FOR |S21| -j10 12 -j250 .08 1.2 -j25 -j50 -j100 1.6 -90° FREQUENCY (MHZ) 500 1000 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 S11 MAG .955 .930 .841 .820 .794 .766 .721 .681 .627 .576 .516 .468 .438 .422 .412 ANG -100.1 -137.3 84.2 72.6 59.1 44.2 26.8 8.7 -11.9 -34.7 -62.3 -94.0 -127.9 -161.2 168.2 S-PARAMETERS VDS = 10V, IDS = 240mA S21 S12 MAG ANG MAG ANG 8.764 5.517 1.023 1.011 1.019 1.026 1.037 1.014 1.138 1.222 1.245 1.311 1.294 1.293 1.282 132.9 117.2 103.8 102.2 100.6 98.8 95.1 93.7 90.8 85.6 80.2 72.9 55.2 54.9 32.7 .023 .028 .026 .027 .029 .035 .039 .043 .044 .048 .050 .051 .053 .052 .051 50.0 38.1 90.8 93.0 92.2 89.4 88.6 81.2 81.0 76.5 74.0 70.3 64.2 56.3 42.8 S22 MAG .281 .295 .809 .828 .842 .854 .867 .881 .862 .839 .841 .829 .816 .844 .863 ANG -52.4 -75.4 -171.9 -176.1 -179.9 175.9 170.8 166.6 161.3 156.5 149.9 143.6 136.5 127.8 114.2 Download S-Parameters, click here 3 FLX107MH-12 X, Ku Band Power GaAs FET Case Style "MH" Metal-Ceramic Hermetic Package 1.0 Min. (0.039) 2-Ø1.8±0.15 (0.071) 1 3.5±0.15 (0.138) 0.1 (0.004) 4 3 0.5 (0.020) 2 1.0 Min. (0.039) 1.65±0.15 (0.065) 2.8 Max. (0.110) 3.5±0.3 (0.138) 1. 2. 3. 4. 1.0 (0.039) 6.7±0.2 (0.264) 10.0±0.3 (0.394) Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4