FMM1061VJ

FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -5V (or+5V) DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available DESCRIPTION The FMM1061VJ is a GaAs Microwave Static Frequency Divider designed for dividing an input signal by 4 over a frequency range from 2.0 to 6.0 GHz. This part is designed for Microwave Frequency Synthesizer and Phase-Locked Oscillator applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Supply Voltage Input Voltage Input Power Storage Temperature Power Dissipation Symbol Vss Vin Pin Tstg PD Ratings -7.0 to 0 Vss to 0 +13.0 -55 to +125 1.0 Unit V V dBm °C W RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Ambient Temperature Symbol Vss Ta Min. -5.5 -30 Limit Typ. -5.0 Max. -4.5 +70 Unit V °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta = 25°C, Vss = -5.0V) Parameter Power Supply Current Operating Frequency Output Power CASE STYLE: VJ Symbol Iss Condition Min. Pin = 0~10dBm 2.0 0 Limit Typ. Max. 100 4 6.0 Unit mA GHz dBm fin Po Edition 1.1 August 1999 1 FMM1061VJ GaAs MMIC Test Circuit Positive Supply Voltage VDD = +5V Operation Circuit VDD = +5.0V 0.33µF 2 1000pF INPUT 4 GND 1 3 GND VDD 10 IN OUT 50Ω OUTPUT 1000pF 1000pF OUTPUT 50Ω 9 GND 1000pF 5 IN OUT VSS GND 8 50Ω 6 7 Negative Supply Voltage Vss = -5V Operation Circuit 2 1000pF INPUT 4 GND 1 1000pF OUTPUT 50Ω 1000pF OUTPUT 50Ω 3 GND VDD 10 IN OUT 9 GND 1000pF 5 IN OUT VSS GND 8 50Ω 6 0.33µF 7 VSS = -5.0V 2 FMM1061VJ GaAs MMIC INPUT SENSITIVITY CHARACTERISTICS Vss = -5.0V, Ta = 25°C 5 0 RECOMMENDED OPERATING REGION (2GHz~6GHz) Pout 8 7 6 5 4 Output Power (dBm) Input Power (dBm) -5 -10 -15 -20 -25 -30 Pin 3 2 1 1 2 3 4 5 6 7 Input Frequency (GHz) 3 FMM1061VJ GaAs MMIC Case Style “VJ” 1.2±0.2 (0.047) 7.2±0.2 (0.283) 4.8±0.2 (0.189) 5 4 3 10-0.38 (0.015) 6-1.27 (0.050) 1.2±0.2 (0.047) 3.8 (0.150) 2.8 (0.110) 6.3±0.2 (0.248) 3.9±0.2 (0.154) 6 7 2 1 8 9 10 INDEX LEAD ASSIGNMENT 0.15 (0.006) Lead 1. 2. 3. 4. 5. Symbol VDD GND IN GND IN Lead 6. 7. 8. 9. 10. 1.9 (0.075) 2.9 (0.114) Symbol Vss GND OUT GND OUT Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4