FMM5049VT

FMM5049VT Power Amplifier MMIC FEATURES • • • • High Output Power: Pout = 41.0dBm (Typ.) High Linear Gain: GL = 33.0dB (Typ.) Broad Band: 1.8 to 2.3GHz Hermetically Sealed Package DESCRIPTION The FMM5049VT is a high-gain, wide band, three-stage MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the 1.8-2.3GHz band. The output stage is partially matched for this device. This product is uniquely suited for use in base station amplifiers as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Operating Backside Temperature Symbol VDD VGG Pin Tstg Top Condition Rating +12 -7 +15 -55 to +125 -40 to +85 Unit V V dBm °C °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 10 volts. 2. The drain-source operating voltage (VGG) should not exceed -5 volts. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Output Power Linear Gain (Note 1) Drain Current Gate Current DC Input Current Note 1 Pin≤-6dBm Symbol Pout GL IDD IGG IDD(DC) Conditions Min. 39.0 30.0 - Limits Typ. Max. 41.0 33.0 4000 70 2500 - Unit dBm dB mA mA mA VDD1,2 = 10V f = 2.2GHz Pin = 12dBm Without RF - Edition 1.0 October 2001 1 FMM5049VT Power Amplifier MMIC OUTPUT POWER, IDD vs. INPUT POWER @ W-CDMA BAND(TUNED) VDD = 10V, VGG = -5V Pout(2.1GHz) IDD(2.1GHz) Pout(2.15GHz) IDD(2.15GHz) Pout(2.2GHz) IDD(2.2GHz) 42 40 38 36 34 32 30 28 26 5600 5200 4800 4400 4000 3600 3200 2800 2400 IDD (mA) Pout (dBm) -8 -6 -4 -2 0 2 4 6 8 10 12 Pin (dBm) OUTPUT POWER vs. FREQUENCY @ W-CDMA BAND(TUNED) ACP, IMD & IDD vs. OUTPUT POWER @ W-CDMA BAND(TUNED) VDD = 10V, VGG = -5V, W-CDMA 2-tone Signal, f1 = 2.14GHz, 0 f2 = 2.155GHz VDD = 10V, VGG = -5V 42 40 Output Power (dBm) 38 36 34 0dBm 4dBm Pin=12dBm 3500 3000 2500 2000 1500 1000 8dBm ACP (dBc), IMD (dBc) -10 -20 -30 -40 -50 IDD IMD 5M 10M 32 30 -4dBm 2.00 2.05 2.10 2.15 2.20 2.25 2.30 26 28 30 32 34 36 Frequency (GHz) Total Output Power (dBm) 2 IDD (mA) FMM5049VT Power Amplifier MMIC +j50 +j25 1.7 1.7 2.9GHz 2.3 50Ω 2.1 2.7 2.5 2.3 2.9GHz 2.1 1.9 100 250 2.5 S11 S22 +j100 +90° S21 S12 80 60 2.1 +j10 +j250 1.9 1.9 40 20 2.9GHz 1.7 2.7 2.3 2.5 2.11.9 2.5 1.7 0 10 2.7 180° .01 .005 2.9GHz 2.7 0° 2.3 SCALE FOR |S12| -j25 -j50 -j100 -90° S-PARAMETERS VDD1,2 = 10V, VGG = -5V FREQUENCY S11 (MHZ) MAG ANG 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 .374 .322 .252 .195 .188 .182 .192 .241 .338 .408 .463 .523 .580 92.6 65.1 15.6 -55.3 -121.9 179.1 118.2 65.6 23.9 -11.0 -39.6 -68.2 -96.6 S21 MAG 44.398 51.515 57.842 56.725 49.890 41.985 35.139 28.492 22.187 19.007 14.903 11.450 9.734 S12 ANG MAG .003 .003 .003 .003 .002 .001 .001 .001 .002 .002 .002 .002 .002 SCALE FOR |S21| -j10 -j250 S22 ANG MAG .594 .543 .523 .562 .578 .567 .543 .559 .570 .604 .663 .709 .747 ANG 93.0 63.0 17.2 -36.7 -75.4 -99.7 -116.1 -128.5 -144.0 -156.5 -170.2 177.1 167.1 -99.2 -144.4 165.5 114.1 65.6 21.2 -20.9 -62.0 -96.5 -134.8 -167.5 155.9 122.1 14.1 -4.0 -34.5 -51.8 -73.8 -69.6 -78.6 -73.6 -102.5 -125.7 -136.7 -163.6 179.7 Download S-Parameters, click here 3 FMM5049VT Power Amplifier MMIC Case Style "VT" 1.5Min. 12.9±0.2 2-3.2 1.5Min. 1.6 0.2Max. 3 2 1 0.3 4 3.2 10.7 17.0 21.0 5.2Max. 0.1 2.6 5 6 3.2 10.7±0.3 1. VDD1 2. Pin 3. VGG 4. NC 5. Pout 6. VDD2 7. Source(GND) Unit: mm 7 (1.8) Index 2-R1.6 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0901M200 4