FMM5051VF

FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm (typ.) High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5051VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications in the 13.75 to 14.5GHz frequency range. This product is well suited for VSAT applications as it offers high power, high gain, and low VSWR. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD VGG Pin Tstg Top Rating 8 -3 8 -65 to +175 -40 to +85 Unit V V dBm °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs modules: 1. The drain operating voltage (VDD) should not exceed 5 volts. 2. The gate operating voltage (VGG) should not exceed 0 volts. ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25°C) Item Frequency Range Output Power (Pin=3dBm) Linear Gain Gain Flatness Input VSWR Output VSWR DC Input Current CASE STYLE: VF Symbol f Pout GL ∆G VSWRi VSWRo IDD VDD = 5V, VGG = 0V VDD = 5V VGG = 0V f =13.75 to 14.5GHz Test Conditions Min. Limit Typ. Max. Unit GHz 2 3:1 3:1 1000 dBm dB dB mA 13.75-14.5 30.8 30.0 31.5 31.5 1.5 2:1 2:1 800 G.C.P.: Gain Compression Point Edition 1.1 May 2001 1 FMM5051VF 13.75-14.5GHz Power Amplifier MMIC OUTPUT POWER vs. INPUT POWER 32 30 28 26 24 22 20 18 VDD=5V VGG=0V f=14.5GHz Output Power (dBm) 1000 800 600 -12 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm) OUTPUT POWER vs. FREQUENCY 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 VDD=5V VGG=0V IDD=800mA P1dBm Output Power (dBm) -4dBm -8dBm -12dBm 12.5 13 13.5 14 14.5 15 15.5 Frequency (GHz) 2 IDD(mA) FMM5051VF 13.75-14.5GHz Power Amplifier MMIC +j50 +j25 +j100 S11 +j25 +j50 +j100 S22 +j10 17.0 +j250 +j10 16.0 +j250 0 16.0 13.0 25 50Ω 100 0 10 17.0 14.0 50Ω 100 15.0 14.0 13.0 -j10 15.0 12.0 11.0GHz -j250 -j10 12.0 11.0GHz -j250 -j25 -j50 -j100 -j25 -j50 -j100 FREQUENCY S11 (MHZ) MAG ANG 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 .740 .739 .627 .518 .178 .239 .400 .406 .450 .467 .600 .711 .785 -81.857 -101.149 -116.071 -139.881 168.355 6.386 -37.02 -70.73 -105.697 -149.353 -170.36 167.121 150.759 S-PARAMETERS VDD = 5V, VGG = 0V S21 S12 MAG ANG MAG ANG 13.457 18.257 24.049 32.716 39.042 39.41 36.17 31.57 24.022 17.462 11.478 7.015 4.078 177.785 141.305 104.138 57.683 2.669 -56.752 -109.235 -164.016 140.215 88.766 39.618 -6.136 -44.014 .003 .001 .003 .002 .002 .003 .003 .003 .003 .001 .004 .005 .009 157.794 0.176 -126.024 -102.594 -122.226 -137.041 -154.964 -143.88 -152.991 -176.233 -175.798 -172.492 174.247 S22 MAG ANG .709 .701 .584 .386 .182 .206 .122 .093 .247 .273 .182 .069 .210 -37.611 -71.027 -91.825 -114.205 -96.445 -84.57 -112.619 92.18 49.713 22.654 -10.138 -112.219 174.86 Download S-Parameters, click here RECOMMENDED BIAS CIRCUIT 1000pF 50Ω VGG RFin VDD 50Ω 1000pF 3 2 1 1000pF 50Ω 4 5 6 50Ω 1000pF VDD RFout VDD Note: The R/C networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. 3 FMM5051VF 13.75-14.5GHz Power Amplifier MMIC Case Style "VF" 17.78 (0.70) 13.46 (0.530) 8.38 (0.330) 6.4 (0.253) INDEX 0.5±0.3 1.0 MIN (0.039) 4-C 1.52 (0.060) 0.5±0.3 1 2 3 PIN ASSIGNMENT Pin 2.44 (0.096) 6.63 (0.261) 8.33 (0.328) 6.63 (0.260) Symbol VDD RF in VGG VDD RF out VDD 2-R 1.22 (0.048) 6 5 4 1. 2. 3. 4. 5. 6. 0.125 (0.005) 1.02 (0.040) 3.0 MAX (0.118) 1.0 MIN (0.039) 4-0.5 (0.020) 2-0.3 (0.012) (4-R 0.5) (0.020) Unit: mm(inches) 7.88 (0.310) 0.3±0.15 0.5±0.15 (0.020) 0.5±0.15 (0.020) 0.51 (0.020) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0501M200 4