FMM5056VF

FMM5056VF 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm(typ.) ・High Linear Gain: 28.0dB(typ.) ・Low VSWR ・Broad Band: 5.8～7.2GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5056VF is a MMIC amplifier that contains a four-stage amplifier, internally matched, for standard communications band in the 5.8 to 7.2GHz frequency range. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item DC Input Voltage DC Input Voltage Input Power Storage Temperature Symbol VDD VGG Pin Tstg Rating 12 -7 12 -55 to +125 Unit V V dBm ℃ Recommended Operating Condition Item DC Input Voltage at Tc=25℃ Input Power at Tc=25℃ DC Input Current at Tc=25℃ Operating Case Temperature Symbol VDD Pin IDD Tc Condition 10 10 ≤1200 -40 to +85 Unit V dBm mA ℃ ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Item Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Gain Flatness Input VSWR Output VSWR DC Input Current DC Input Current Channel Temperature Rise Symbol f P1dB G1dB ΔG VSWRi VSWRo IDD IGG ΔTch VDD=10V,VGG=-5V VDD=10V VGG=-5V f=5.8 to 7.2GHz 32.0 25.0 Test Conditions Min. Limit Typ. 5.8 - 7.2 34.0 28.0 2.4 2:1 2:1 1100 5.0 50 4.0 2.6 : 1 1200 15.0 Max. Unit GHz dBm dB dB mA mA ℃ CASE STYLE: VF Note: G1dB is referenced to Linear Gain measured at Pin=-5dBm G.C.P.:Gain Compression Point ESD Class 0 ～ 199 V Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.1 May 2003 1 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC OUTPUT POWER vs. FREQUENCY VDD=10V, VGG=-5V 36 34 OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER VDD=10V, VGG=-5V 36 34 Output Power [dBm] 5.8GHz 6.4GHz 7.2GHz 40 Power Added Efficiency [%] Pin=+11dBm P1dB 35 30 25 20 15 10 5 0 Output Power[dBm] 32 30 28 26 24 22 20 5.5 6 6.5 Frequency[GHz] 7 32 30 28 26 24 22 20 -10 Pin=+3dBm Pin=-5dBm 7.5 -5 0 5 10 15 Input Power [dBm] IMD vs OUTPUT POWER(S.C.L.) VDD=10V,VGG=-5V -20 -30 Intermodulation Distortion[dBc] VSWR vs. FREQUENCY VDD=10V, VGG=-5V 2.5 5.8GHz 6.4GHz 7.2GHz VSWR IM5 IM3 2 1.5 1 0.5 INPUT OUTPUT 6 6.5 Frequency [GHz] 7 7.5 0 -40 -50 -60 -70 15 20 25 2-tone total Pout [dBm] 30 5.5 2 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC DRAIN CURRENT vs OUTPUT POWER VDD=10V, VGG=-5V 1150 AMPM vs OUTPUT POWER VDD=10V,VGG=-5V 20 5.8GHz 1100 D rain C urrent [mA] 5.8GHz 6.4GHz 7.2GHz 15 6.4GHz 7.2GHz 1050 ∆ Phase [deg.] 10 5 0 -5 1000 950 900 20 22 24 26 28 30 32 34 36 Output Power [dBm] 25 30 Output Power [dBm] 35 OUTPUT POWER vs. DRAIN VOLTAGE VGG=-5V, f=6.4GHz 36 34 O u tp u t P o w e r [d B m ] 32 30 28 26 24 22 20 7 8 9 Drain Voltage,VDD[V] 10 11 Pin=-5dBm Pin=+3dBm Pin=+11dBm P1dB D rain C u rren t [m A] 1150 1100 1050 1000 950 DRAIN CURRENT vs OUTPUT POWER VGG=-5V f=6.4GHz VDD=10V VDD=9V VDD=8V 900 20 25 30 Output Power [dBm] 35 40 3 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER VGG=-5V, f=6.4GHz 36 34 32 O u tp u t P o w e r [d B m ] 30 28 26 24 22 20 -10 -5 0 5 10 15 Input Power [dBm] VDD=8V VDD=9V VDD=10V 30 25 20 15 10 5 0 40 35 P o w e r A d d e d E ffic ie n c y [ % ] O u tp u t P o w e r [d B m ] 36 34 32 30 28 26 24 22 20 -10 -5 0 5 10 15 Input Power [dBm] OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER VDD=10V, f=6.4GHz 40 VGG=-5.5V 30 25 20 15 10 5 0 DRAIN CURRENT vs OUTPUT POWER VDD=10V f=6.4GHz 1200 1150 OUTPUT POWER vs. GATE VOLTAGE VDD=10V, f=6.4GHz 36 34 Output P ow er [dB m] Pin=+11dBm D ra in C u rre n t [m A ] 1100 1050 1000 950 900 850 800 20 25 30 Output Power [dBm] 35 VGG=-4.5V VGG=-5V P1dB Pin=+3dBm 32 30 28 26 24 22 20 Pin=-5dBm VGG=-5.5V 40 -6 -5.5 -5 Gate Voltage,VGG [V] -4.5 -4 4 Po w e r A d d e d Efficie n c y [%] VGG=-4.5V VGG=-5V 35 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC ■ S-PARAMETER +50j +25j +100j +90° +10j +250j 6. 5 6. 5 0 10 Ω 25 Ω 5. 8 100 Ω 6.5 ∞ 7.2GHz ±180° 40 20 Scale for |S 21| 5.8 5. 8 7. H z 2G 7. H z 2G -250j -10j 0° Scale for |S 12| -25j -50j -100j 0.05 S 11 S 22 0.1 -90° S12 S21 VDD=10.0V, VGG=-5.0V Frequency [GHz] 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7 7.1 7.2 7.3 S11 MAG 0.11 0.08 0.06 0.05 0.06 0.06 0.06 0.06 0.05 0.05 0.08 0.13 0.18 0.22 0.25 0.28 0.29 0.29 ANG 60.30 36.46 3.99 -32.63 -63.96 -89.50 -113.38 -140.43 178.94 121.67 74.14 42.82 19.89 0.51 -16.23 -31.24 -45.18 -58.16 MAG 25.75 24.87 24.46 24.49 24.97 25.80 27.01 28.37 29.70 30.74 31.19 31.06 30.58 29.67 28.78 27.80 26.86 25.84 S21 ANG -53.50 -83.02 -111.49 -139.66 -167.78 163.81 134.51 104.22 72.78 40.05 6.88 -26.88 -60.37 -93.74 -127.22 -160.64 165.59 130.81 MAG 0.0013 0.0013 0.0011 0.0012 0.0013 0.0014 0.0016 0.0018 0.0021 0.0024 0.0026 0.0026 0.0026 0.0026 0.0024 0.0020 0.0017 0.0014 S12 ANG -167.09 -168.43 -159.93 -157.97 -154.12 -154.94 -156.94 -161.66 -170.22 -178.69 169.54 157.81 144.13 132.25 118.43 110.25 98.22 91.48 MAG 0.24 0.22 0.20 0.19 0.18 0.19 0.21 0.24 0.28 0.32 0.34 0.34 0.32 0.29 0.23 0.17 0.09 0.02 S22 ANG 3.68 -16.53 -39.28 -65.48 -95.80 -127.81 -159.39 170.47 141.84 114.82 88.83 63.73 40.09 17.13 -4.92 -27.22 -51.99 -122.39 5 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC ■ Recommended Bias Circuit and Internal Block Diagram 1000pF 50Ω VGG N.C. RFin VDD RFout VDD 50Ω 1000pF 50Ω 1000pF Note 1: The RC networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. Note 2: Bias point VDD can be connected at the input side or at the output. The two pins named VDD are internally connected. PIN ASSIGMENT 1 : VDD 2 : RF in 3 : VGG 4 : N.C. 5 : RF out 6 : VDD 6 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC ■ Package Out Line 3 2 1 3 4 5 6 PIN ASSIGMENT 1 : VDD 2 : RF in 3 : VGG 4 : N.C. 5 : RF out 6 : VDD Unit : mm 7 FMM5056VF 5.8-7.2GHz Power Amplifier MMIC For further information please contact : FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0202M200 8