FMM5118X

FMM5118X 20-32GHz Doubler MMIC FEATURES • Integrated Monolithic Doubler • High Harmonic Rejection • Single Supply Voltage • High Reliability DESCRIPTION The FMM5118X is a doubler, consisting of an X2 multiplier followed by a buffer amplifier for applications with an output frequency of 20 to 32 GHz. This doubler is uniquely suited for point-to-point radios, local multi-point distribution systems (LMDS) and satellite communications, as it offers a high dynamic range over a large bandwidth. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter DC Supply Voltage Input Power Storage Temperature Symbol VDD1,2 Pin Tstg Rating 8 10 -65 to +175 Unit V dBm °C RECOMMENDED OPERATING CONDITIONS Item DC Supply Voltage Input Drive Power Operating Backside Temperature Note 1: This product should be hermetically packaged. Symbol VDD1,2 Pin Tbs Min. 3.0 0.0 -45 Recommend Typ. 3.0 25 Max. 6.0 5.0 110 Unit V dBm °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Input Frequency Range Output Frequency Range Output Power Conversion Gain Conversion Gain Flatness Input Return Loss Fundamental Rejection 3rd Harmonic Rejection DC Current Consumption RF Current Consumption Symbol fin fout Pout Gc ∆G RLin RJ1st RJ3rd IDC IRF VDD1,2=5V, Pin=3dBm Conditions Min. 10 20 14 11 Limits Typ. Max. 16 18 14 2.5 15 25 30 100 140 32 20 17 150 200 Unit GHz GHz dBm dB dB dB dB dB mA mA Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1) Edition 1.2 May 2003 1 FMM5118X 20-32GHz Doubler MMIC OUTPUT POWER vs. FREQUENCY VDD1,2=5V, Pin=3dBm Fundamental (fo) 2nd Harmonic (2 x fo) 3rd Harmonic (3 x fo) VDD-Output Power Dependency 30 25 20 Output Power (dBm) 15 10 5 0 -5 -10 -15 -20 -25 19 18 17 Output Power (dBm) 16 15 14 Pin=3dBm 13 12 11 Pout@VDD1,2=6V Pout@VDD1,2=5V Pout@VDD1,2=4V 9 10 11 12 13 14 15 16 17 9 10 11 12 13 14 15 16 17 Input Frequency (GHz) Input Frequency (GHz) OUTPUT POWER vs. FREQUENCY VDD1,2=5V Pin= 0dBm 1dBm 2dBm 3dBm 4dBm 5dBm RF CURRENT vs. FREQUENCY VDD1,2=5V, Pin=3dBm 160 Output Power (2 x fo) (dBm) 20 RF Current (IRF) (mA) 9 10 11 12 13 14 15 16 17 150 15 140 130 10 120 5 9 10 11 12 13 14 15 16 17 Input Frequency (GHz) Input Frequency (GHz) 2 FMM5118X 20-32GHz Doubler MMIC SMALL SIGNAL RETURN LOSS vs. FREQUENCY 0 S22 VDD1,2=5V, Pin=-10dBm –5 Input/Output Return Loss (dB) –10 S11 –15 –20 –25 5 10 15 20 25 30 35 40 Frequency (GHz) Block Diagram VGG=0V (GND) fo IN X2 2 x fo OUT VDD1=5V VDD2=5V 3 FMM5118X 20-32GHz Doubler MMIC Bonding Diagram VGG=GND 2 x fo OUT fo IN C=220pF 0.15µF VDD=5V 4 FMM5118X 20-32GHz Doubler MMIC Notes: 5 FMM5118X 20-32GHz Doubler MMIC CHIP OUTLINE 2030 Unit: µm Chip Size: 2.14mm x 2.03mm Chip Thickness: 110µm (Typ.) Pad Dimensions: 1. fo IN: 80 x 160µm 2. VGG: 100 x 100µm 3. 2x fo OUT: 80 x 160µm 4. VDD1: 100 x 100µm 5. VDD2: 80 x 80µm 1760 VGG 675 2x fo OUT 440 fo IN 180 170 0 VDD1 0 170 185 730 880 VDD2 2005 2140 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0502M200 6