FMM5704X

FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB (Typ.) @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5704X is a LNA MMIC designed for applications in the 36-40 GHz frequency range. This product is well suited for satellite communications, radio link, and applications where low noise and high dynamic range are required. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Input Power Storage Temperature Operating Backside Temperature Symbol VDD Pin Tstg Top Condition Rating 4 -3 -65 to +175 -45 to +125 Unit V dBm °C °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 3 volts. 2. This product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Noise Figure Associated Gain Output Power at 1dB G.C.P. Input Return Loss Output Return Loss Symbol NF Gas P1dB RLin RLout VDD = 3V f = 40GHz IDD = 20mA (Typ.) ZS = ZL = 50Ω Conditions (2) Min. 15 Limits Typ. Max. 2.0 18 9 -10 -10 2.5 20 Unit dB dB dBm dB dB Note 1: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1) Note 2: Electrical Characteristics specified with RF-probe measurement. Edition 1.0 December 2000 1 FMM5704X 36-40GHz LNA MMIC NOISE FIGURE & Gas vs. FREQUENCY 25 VDD = 3V IDD = 20mA 5 VDD = 3V IDD = 20mA P1dB & G1dB vs. FREQUENCY Gas 20 12 P1dB G1dB 4 Noise Figure (dB) 15 P1dB (dBm) Gas (dB) 10 25 3 10 NF 2 5 6 15 4 1 0 10 30 30 35 Frequency (GHz) 40 45 32 34 36 38 40 Frequency (GHz) OUTPUT POWER vs. INPUT POWER 14 12 10 8 Output Power (dBm) 6 4 2 0 -2 -4 VDD = 3V IDD = 20mA 32 GHz 34 GHz 36 GHz 38 GHz 40 GHz -20 -15 -10 -5 0 5 Input Power (dBm) ASSEMBLY DRAWING 0.15µF 100pF RFin RFout *1: Bonding Wire Length: 250µm *2: Bonding Wires: 2 *1 *2 *1 *2 2 G1dB (dB) 8 20 FMM5704X 36-40GHz LNA MMIC S-PARAMETERS VDD = 3V, IDS = 20mA FREQUENCY S11 (MHZ) MAG ANG 16000 16500 17000 17500 18000 18500 19000 19500 20000 20500 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 26000 26500 27000 27500 28000 28500 29000 29500 30000 30500 31000 31500 32000 32500 33000 33500 34000 34500 35000 35500 36000 36500 37000 37500 38000 38500 39000 39500 40000 .920 .926 .936 .945 .957 .968 .977 .990 1.000 1.012 1.023 1.039 1.052 1.054 1.063 1.065 1.061 1.048 1.042 1.022 1.002 .976 .932 .882 .832 .773 .722 .659 .557 .487 .385 .287 .227 .157 .122 .088 .107 .116 .090 .071 .049 .076 .096 .076 .063 .071 .076 .096 .115 133.9 128.0 122.0 115.7 109.4 102.7 96.1 89.0 82.2 75.0 67.4 59.7 51.7 43.1 34.8 25.8 16.5 7.4 -2.2 -12.0 -21.9 -32.2 -43.0 -53.5 -64.9 -75.0 -85.4 -98.6 -109.6 -121.1 -136.5 -140.5 -142.4 -147.4 -139.5 -134.7 -119.7 -113.0 -122.0 -116.2 -97.4 -90.5 -97.5 -111.1 -85.5 -68.8 -71.8 -69.3 -65.9 S21 MAG .067 .084 .097 .118 .138 .161 .204 .256 .299 .369 .446 .551 .635 .757 .925 1.117 1.340 1.546 1.786 2.093 2.560 3.037 3.736 4.235 4.917 5.691 6.558 7.712 8.807 9.847 10.915 11.425 12.051 12.664 12.612 12.479 11.885 11.451 10.651 9.866 9.103 8.559 8.196 7.751 7.109 6.467 6.302 6.072 5.836 S12 ANG MAG .004 .002 .001 .000 .002 .002 .004 .004 .005 .006 .005 .006 .007 .006 .008 .008 .007 .008 .007 .006 .004 .004 .004 .003 .004 .003 .006 .010 .012 .016 .018 .018 .019 .020 .022 .023 .024 .024 .024 .023 .024 .027 .029 .031 .029 .025 .022 .019 .016 S22 ANG MAG .831 .828 .826 .824 .823 .821 .815 .814 .810 .809 .808 .808 .809 .808 .809 .814 .815 .815 .815 .816 .814 .813 .816 .816 .801 .795 .752 .705 .670 .619 .554 .487 .406 .323 .264 .217 .174 .138 .111 .107 .123 .138 .176 .225 .248 .263 .283 .291 .282 ANG -166.6 -169.9 -173.2 -176.5 -179.7 176.8 173.5 170.4 167.2 163.9 160.7 157.5 154.1 150.5 147.4 143.7 139.5 135.7 131.1 126.1 121.7 116.7 111.4 105.3 98.4 89.7 81.0 74.3 64.5 54.6 45.6 34.5 23.6 14.8 3.5 -12.7 -37.2 -71.8 -114.6 -155.2 -174.6 -179.0 177.3 165.9 153.5 144.4 135.7 127.7 119.0 41.5 35.3 26.4 20.1 8.9 3.4 -6.5 -15.3 -23.2 -34.0 -43.4 -54.3 -64.0 -75.1 -86.0 -98.2 -108.5 -122.4 -133.5 -144.8 -155.7 -168.2 175.5 158.4 143.9 131.5 117.1 100.0 79.4 61.7 42.3 24.0 4.7 -14.5 -33.4 -51.5 -69.8 -86.2 -102.1 -116.0 -128.4 -141.1 -151.7 -164.8 -174.9 175.0 166.3 158.0 149.4 62.1 24.5 -62.6 -174.7 101.1 82.9 56.0 37.8 19.7 5.3 -12.1 -15.5 -24.4 -28.5 -34.6 -52.7 -66.0 -66.7 -72.4 -87.8 -88.2 -65.8 -71.0 -70.8 -20.4 -15.5 0.7 -16.3 -16.5 -34.9 -47.2 -58.4 -63.5 -71.3 -76.7 -86.7 -96.3 -105.6 -113.1 -115.1 -120.8 -127.8 -137.6 -153.1 -168.7 178.9 171.6 167.2 165.6 Download S-Parameters, click here 3 FMM5704X 36-40GHz LNA MMIC CHIP OUTLINE 400 660 1060 Unit: µm VDD1 900 VDD2 VDD3 500 RF IN RF OUT 0 0 160 1300 Chip Size: 1.46mm x 1.06mm Chip Thickness: 110µm(Typ.) Pad Dimensions: 1. DC 80 x 80µm 2. RF 80 x 160µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI05009M200 4