FMM5815X

FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm (Typ.) High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC amplifier designed for operation in the17.5-20.0 GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems.This device is well suited for point-to-point communication applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain Voltage Gate Voltage Input Power Storage Temperature Operating Backside Temperature Symbol VDD VGG Pin Tstg Top Condition Rating 10 -3.0 22 -65 to +175 -65 to +85 Unit V V dBm °C °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4 and -0.39 mA respectively. 3. This product should be hermetically packaged ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C) Item Frequency Range Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Drain Current Power-Added Efficiency Input Return Loss Output Return Loss 3rd Order Intermodulation Distortion Symbol f P1dB G1dB Iddrf ηadd RLin RLout IM3 VDD = 6V IDD = 600mA (Typ.) ZS = ZL = 50Ω Conditions Min. Limits Typ. Max. Unit GHz 24 950 dBm dB mA % dB dB dBc 17.5 - 20.0 29.5 19 ∆f=10MHz, 2-Tone Test, -37.0 Pout=20dBm S.C.L. 31 21 700 30 -12 -8 -40 Note 1: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1) Note 2: Electrical Characteristic is specified on RF-probe measurements G.C.P.: Gain Compression Point S.C.L.: Single Carrier Level Edition 1.0 June 2001 1 FMM5815X 17.5-20GHz Power Amplifier MMIC IM3 vs. OUTPUT POWER -20 -25 -30 IM3 (dBc) -35 -40 -45 -50 -55 -60 17 19 21 23 25 27 29 15 Total Output Power (dBm) -4 0 4 8 12 0 VDD = 6V IDD(DC) = 600mA OUTPUT POWER vs. INPUT POWER 35 VDD = 6V IDD(DC) = 600mA Total Output Power (dBm) 17.5GHz 18.0GHz 20.0GHz 31 17.5GHz 18.0GHz 20.0GHz Pout 27 23 ηadd 40 ηadd (%) 19 20 Total Input Power (dBm) P1dB & G1dB vs. FREQUENCY 40 36 P1dB(dBm), G1dB(dB) 32 28 24 20 16 VDD = 6V IDD(DC) = 600mA P1dB G1dB ηadd 120 104 88 72 56 40 24 ηadd (%) 17.5 18.0 18.5 19.0 19.5 20.0 Frequency (GHz) 2 FMM5815X 17.5-20GHz Power Amplifier MMIC S-PARAMETERS VDD = 6V, IDS = 600mA FREQUENCY S11 (MHZ) MAG ANG 16500 17000 17500 18000 18500 19000 19500 20000 20500 21000 .357 .385 .443 .512 .566 .572 .538 .459 .346 .307 47.0 19.3 -10.5 -39.3 -66.7 -92.9 -117.9 -144.7 165.1 74.2 S21 MAG 10.785 12.059 13.360 14.483 14.782 14.585 13.693 13.188 12.600 11.066 S12 ANG MAG .004 .005 .005 .007 .007 .005 .005 .003 .005 .006 S22 ANG -51.8 -42.8 -62.5 -83.0 -95.1 -112.5 -142.9 94.6 33.8 -10.5 MAG .110 .111 .169 .205 .220 .178 .121 .051 .044 .080 ANG -20.6 -93.5 -134.6 -166.6 164.9 137.0 108.3 53.6 19.8 11.4 -44.4 -80.4 -117.3 -156.9 161.9 120.3 78.7 37.1 -10.4 -65.4 Download S-Parameters, click here ASSEMBLY DRAWING VGG 0.15µF VDD 0.15µF 220pF 220pF RFin RFout 220pF 220pF Chip Size: 3.57mm x 2.76mm 0.15µF VDD 3 FMM5815X 17.5-20GHz Power Amplifier MMIC CHIP OUTLINE VGG1 VDD1 0 2760 2640 2555 620 750 1155 2380 VDD2 3075 3570 2760 2510 1380 1194 RFout RFin 280 205 120 0 250 0 Chip Size: 3570µm x 2760µm Chip Thickness: 70µm Pad Dimensions: 1. DC Pad: 80µm x 80µm VDD: 100µm x 100µm 2. RF Pad: 120µm x 80µm Unit: µm 0 120 636 750 VDD3 1155 VDD4 VGG2 2380 3075 VDD5 3450 3570 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0601M200 4