FMM5822X

FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm (Typ.) •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three stage amplifier, internally matched, for standard communications band in 17.5 to 20.0GHz frequency range. This product is well suited for point-to-point radio applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. Device photo ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Strage Temperature Stmbol VDD VGG Pin Tstg Condition Rating 10 -3 25 -55   to +125 Unit V V dBm ℃ RECOMMENDED OPERATING CONDITIONS Item Symbol Condition Drain-Source Voltage VDD Input Power Pin Operating Backside Temperature Top * : FMM5822X/001 Recommended Drain-Source Voltage VDD≦8V This Product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃ ) Recommended ≦7* 15 -40   to +85 Unit V dBm ℃ Limits Unit Min. Typ. Max. Frequency Range f VDD=6.0V 17.5 20 GHz Output Power at 1dB G.C.P. P1dB IDD(DC)=850mA typ. 30.5 32.5 dBm Power Gain at 1dB G.C.P. G1dB Zs=Zl=50ohm 19 21 25 dB Power Added Efficiency at 1dB G.C.P. Nadd 30 %   Third Order Intermodulation IM3* *df=10MHz,Po=20.5dBm  -38 -41 dBc Drain Current at 1dB G.C.P. Iddrf 1000 1500 mA           (S.C.L.)       Input Return Loss at Pin=-20dBm RLin -8 dB Output Return Loss at Pin=-20dBm RLout -12 dB Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1) G.C.P. : Gain Compression Point S.C.L. : Single Carrier Level Item Symbol Test Conditions ESD Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Class 0 ~ 199V Edition 2.1 November 2004 1 FMM5822X K-Band Power Amplifier MMIC Output Power vs. Frequency VDD=6V, IDD(DC)=850mA 35 33 31 Output Power [dBm] 29 27 25 23 21 19 17 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 Frequency [GHz] Pin = 0dBm Pin = 12dBm P1dB Output Power, Drain Current vs. Input Power VDD=6V, IDD(DC)=850mA 34 32 Output Power [dBm] 30 28 Pout 1500 17.5GHz 18.5GHz 20GHz 1400 1300 1200 1100 1000 900 800 700 -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] Pin = 8dBm Pin = 4dBm 26 24 22 20 18 Drain Current Power Added Efficiency vs. Frequency VDD=6V, IDD(DC)=850mA 35 30 Power Added Efficiency [%] 25 20 15 10 5 0 16.5 Pin = 8dBm Pin = 12dBm P1dB Pin = 4dBm Pin = 0dBm 17 17.5 18 18.5 19 19.5 20 20.5 21 Frequency [GHz] 2 Drain Current [mA] FMM5822X K-Band Power Amplifier MMIC IMD vs. Frequency VDD=6V, IDD(DC)=850mA, Pout=20dBm S.C.L. -30 IMD vs. Output Power VDD=6V, IDD(DC)=850mA -15 Intermodulation Distortion [dBc] -20 -25 -30 -35 -40 IM3 -45 -50 -55 IM5 17.5GHz 18.5GHz 20GHz Intermodulation Distortion [dBc] -35 -40 IM3 -45 -50 IM5 -55 -60 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 21.5 Frequency [GHz] -60 14 16 18 20 22 24 26 28 30 32 2-tone Total Output Power [dBm] 3 FMM5822X K-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=850mA, f=17.5GHz Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=850mA, f=18.5GHz 36 34 32 Output Power [dBm] 30 28 26 24 22 20 Drain Current Pout 1600 4V 5V 6V 7V 8V 2 1500 1400 Output Power [dBm] Drain Current [mA] 1300 1200 1100 1000 900 800 700 -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] 36 34 32 30 28 Pout 1600 4V 5V 6V 7V 8V a 1500 1400 1300 1200 1100 1000 900 800 Drain Current 26 24 22 20 18 -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] 18 700 Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=850mA, f=20.0GHz 36 34 32 Output Power [dBm] 30 28 26 24 22 20 Drain Current Pout Output Power, Gain vs. Drain Voltage IDD(DC)=850mA 1600 36 35 34 1400 P1dB [dBm] 1300 1200 1100 1000 900 800 700 Drain Current [mA] 33 32 31 30 29 G1dB P1dB 30 17.5GHz 18.5GHz 20GHz 29 28 27 G1dB [dB] 26 25 24 23 22 21 20 19 3 4 5 6 VDD [V] 7 8 9 4V 5V 6V 7V 8V a 1500 28 27 26 25 18 -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] 4 Drain Current [mA] FMM5822X K-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Current VDD=6V, f=17.5GHz Output Power, Drain Current vs. Input Power by Drain Current VDD=6V, f=18.5GHz 34 32 30 Output Power [dBm] 28 26 24 22 20 18 -4 -2 0 2 4 6 8 10 Input Power [dBm] 12 14 16 Drain Current Pout 2100 650mA 850mA 1050mA 1900 1700 Output Power [dBm] Drain Current [mA] 1500 1300 1100 900 700 500 34 32 30 28 26 24 22 20 18 -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] Drain Current Pout 2100 650mA 850mA 1050mA 1900 1700 1500 1300 1100 900 700 500 Drain Current [mA] Output Power, Drain Current vs. Input Power by Drain Current VDD=6V, f=20.0GHz 34 32 30 Output Power [dBm] 28 26 24 22 20 18 -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] Drain Current Pout Output Power, Gain vs. Drain Current VDD=6V 2100 36 35 34 1700 Drain Current [mA] P1dB [dBm] 1500 1300 1100 900 700 500 33 32 31 30 29 28 27 26 25 600 700 800 900 1000 IDD(DC) [mA] G1dB P1dB 30 17.5GHz 18.5GHz 20GHz 29 28 27 G1dB [dB] 26 25 24 23 22 21 20 19 1100 650mA 850mA 1050mA 1900 5 FMM5822X K-Band Power Amplifier MMIC IMD vs. Output Power by Drain Voltage IDD(DC)=850mA, f=17.5GHz -15 Intermodulation Distortion [dBc] -20 -25 -30 -35 -40 -45 -50 IM5 IM3 IMD vs. Output Power by Drain Voltage IDD(DC)=850mA, f=18.5GHz -15 4V 5V 6V 7V 8V a -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 4V 5V 6V 7V 8V a IM3 -55 -60 14 16 18 20 22 24 26 28 30 32 2-tone Total Output Power [dBm] IM5 14 16 18 20 22 24 26 28 30 32 34 2-tone Total Output Power [dBm] IMD vs. Output Power by Drain Voltage IDD(DC)=850mA, f=20.0GHz -15 Intermodulation Distortion [dBc] -20 -25 -30 -35 -40 -45 -50 -55 -60 14 16 18 20 22 24 26 28 30 32 2-tone Total Output Power [dBm] IM3 IM5 4V 5V 6V 7V 8V a 6 FMM5822X K-Band Power Amplifier MMIC IMD vs. Output Power by Drain Current VDD=6V, f=17.5GHz -15 -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 IM3 IMD vs. Output Power by Drain Current VDD=6V, f=18.5GHz -15 650mA 850mA 1050mA -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 650mA 850mA 1050mA -45 IM5 IM3 IM5 -50 -55 -60 14 16 18 20 22 24 26 28 30 32 2-tone Total Output Power [dBm] 14 16 18 20 22 24 26 28 30 32 2-tone Total Output Power [dBm] IMD vs. Output Power by Drain Current VDD=6V, f=20.0GHz -15 -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 14 16 18 20 22 24 26 28 30 32 2-tone Total Output Power [dBm] IM3 IM5 650mA 850mA 1050mA 7 FMM5822X K-Band Power Amplifier MMIC ■ S-PARAMETER 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 0 S21 S11 S22 Sxx [dB] 5 10 15 20 25 30 Frequency [GHz] 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 S21 S11 S22 Sxx [dB] 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 Frequency [GHz] 8 FMM5822X ■ S-PARAMETER VDD=6V, IDD=850mA Frequency [GHz] 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 17.1 17.2 17.3 17.4 17.5 17.6 17.7 17.8 17.9 18.0 18.1 18.2 18.3 18.4 18.5 18.6 18.7 18.8 18.9 19.0 19.1 19.2 19.3 19.4 19.5 19.6 19.7 19.8 19.9 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 S11 MAG ANG 0.98 -27.0 0.97 -52.2 0.94 -73.4 0.93 -91.8 0.93 -108.1 0.93 -122.9 0.93 -137.6 0.87 -153.7 0.79 -163.6 0.75 -173.6 0.71 175.2 0.66 162.3 0.59 147.3 0.50 128.4 0.40 103.9 0.33 70.4 0.37 16.9 0.39 11.1 0.39 4.6 0.41 -1.2 0.42 -7.4 0.43 -12.8 0.45 -18.9 0.46 -24.9 0.48 -30.1 0.49 -36.5 0.51 -41.6 0.52 -47.4 0.53 -52.5 0.55 -57.9 0.55 -63.4 0.57 -68.9 0.57 -74.4 0.57 -79.3 0.58 -85.3 0.57 -89.9 0.57 -94.9 0.57 -100.3 0.56 -104.8 0.56 -110.0 0.54 -115.1 0.54 -120.1 0.52 -125.2 0.51 -130.1 0.49 -136.3 0.47 -141.0 0.46 -147.8 0.33 70.0 0.73 -36.9 0.85 -75.1 0.87 -94.6 0.87 -107.0 0.87 -115.5 0.87 -122.5 0.86 -127.7 0.86 -131.8 0.87 -135.6 S21 MAG ANG 0.10 43.4 0.36 -145.5 0.10 145.9 0.16 123.0 0.26 163.1 0.55 83.8 0.61 45.3 0.76 0.4 0.97 -38.0 1.22 -78.6 1.58 -117.2 2.16 -157.4 3.11 158.4 4.60 108.1 6.75 51.6 9.61 -11.8 12.43 -82.7 12.66 -89.6 13.01 -97.0 13.24 -104.4 13.56 -111.8 13.78 -119.8 14.07 -127.1 14.38 -135.3 14.50 -143.1 14.90 -151.0 14.96 -159.6 15.18 -167.5 15.31 -176.4 15.27 175.8 15.43 166.9 15.25 158.8 15.34 150.6 15.23 141.9 15.22 134.1 15.19 125.4 15.03 116.9 15.02 108.4 14.75 99.5 14.55 91.4 14.36 82.9 14.07 75.0 14.01 66.9 13.78 58.4 13.76 50.5 13.64 41.4 13.54 33.1 11.17 -70.5 4.27 174.8 0.84 90.0 0.11 45.9 0.02 88.6 0.02 91.1 0.02 57.6 0.02 36.7 0.02 0.2 0.02 -20.5 S12 MAG ANG 0.00 -106.0 0.00 -128.4 0.00 -87.5 0.00 -108.9 0.00 -111.3 0.00 -95.4 0.00 -81.8 0.00 -62.2 0.00 -80.7 0.00 -104.3 0.00 -131.4 0.00 173.8 0.00 -42.1 0.00 -25.2 0.00 -39.4 0.00 -40.1 0.01 -48.2 0.01 -47.9 0.01 -53.1 0.01 -53.3 0.01 -53.6 0.01 -59.5 0.01 -57.0 0.00 -70.9 0.01 -67.3 0.01 -72.1 0.01 -84.9 0.01 -78.6 0.01 -80.5 0.01 -77.5 0.01 -83.1 0.01 -97.7 0.01 -97.8 0.01 -101.9 0.01 -112.6 0.01 -110.9 0.01 -114.1 0.01 -127.0 0.01 -121.8 0.00 -141.5 0.00 -148.2 0.01 -138.9 0.00 -158.6 0.00 -174.6 0.00 155.8 0.00 133.3 0.00 104.2 0.01 -1.2 0.01 -60.8 0.00 -81.5 0.00 49.0 0.01 -11.8 0.01 -41.2 0.01 -21.4 0.01 -1.4 0.02 -13.2 0.02 -30.0 S22 MAG ANG 0.99 -44.1 0.94 -80.3 0.92 -102.7 0.96 -121.7 0.98 -137.4 0.98 -150.8 0.97 -162.1 0.96 -172.0 0.95 177.9 0.93 167.5 0.90 156.2 0.86 142.7 0.79 125.8 0.66 103.2 0.45 72.4 0.20 25.0 0.13 -93.4 0.14 -104.1 0.15 -112.5 0.16 -119.7 0.17 -126.9 0.19 -132.7 0.20 -140.4 0.21 -146.6 0.21 -153.6 0.22 -159.3 0.22 -164.7 0.23 -170.8 0.23 -176.3 0.24 178.5 0.24 172.8 0.23 166.8 0.23 160.6 0.22 154.6 0.21 151.1 0.20 144.4 0.19 138.4 0.18 132.5 0.17 126.5 0.16 119.3 0.14 114.1 0.13 109.6 0.11 100.4 0.10 92.9 0.08 80.4 0.06 70.4 0.05 63.2 0.08 15.6 0.37 -24.4 0.61 -68.8 0.70 -95.2 0.73 -111.2 0.76 -122.1 0.78 -130.6 0.79 -137.9 0.81 -143.8 0.83 -149.6 K-Band Power Amplifier MMIC 9 FMM5822X K-Band Power Amplifier MMIC Δ Tch vs. Drain Voltage (Reference) 80 70 60 Δ Tch [℃ ] 50 40 30 20 10 0 4 5 6 VDD [V] 7 8 9 IDD(DC)=900mA MTTF vs. Tch 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 50 100 150 Tch [ C ] o Ea=1.56eV MTTF [ hrs ] 200 250 10 F MM5822X K -Band Power Amplifier MMIC ■ Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG1 VDD2 VDD4 0 120 2760 2640 620 1155 3075 3450 3570 2760 2510 2555 1380 R F - O U T RF-IN 1194 280 205 120 0 0 120 636 750 1155 3075 3450 3570 VDD5 250 0 V D D 1 (V G G 2 ) V D D 3 Chip Size : 3570 ± 30um x 2760± 30um Chip Thickness : 70± 20um Bonding Pad Size : RF-Pad : 120um x 80um VGG-Pad : 80um x 80um VDD-Pad : 100um x 100um Ｎｏｅ: Gate voltage is required from either or both bonding pad( VGG1 or/and VGG2). ｔ 11 FMM5822X K-Band Power Amplifier MMIC ■ Assembly Diagrams Recommended assembly 1 uF VGG 100pF 100pF 100pF 1 uF VDD 50ohm Line 50ohm Line VDD 100pF 100pF 100pF 1 uF “Copper” is the recommended material for the package or carrier. 12 FMM5822X K-Band Power Amplifier MMIC ■ DIE ATTACH 1) The die-attach station must have accurate temperature control and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 300 to 310 deg.C Time : less than 15 seconds AuSn Preform Volume : per next Figure 2500 Volume of Au-Sn Perform (10 -3 /mm3) 2000 FMM5822X 1500 1000 500 0 0 2 4 6 8 10 12 14 16 18 20 Area of Chip Bach Surface (mm^2) ■ WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N ± 0.0196 N Stage Temperature : 215 deg.C ± 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond 13 FMM5822X K-Band Power Amplifier MMIC For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・ not put these products into the mouth. Do ・ not alter the form of this product into a gas, powder, or liquid Do through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・ Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 14