FSU01LG

FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm (Typ.) • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION The FSU01LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a driver in the 2GHz band. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Symbol VDS VGS Ptot Tstg Tch Condition Rating 12.0 -5 Unit V V mW °C °C Note 375 -65 to +175 175 ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Noise Figure Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested. Symbol IDSS gm Vp VGSO P1dB G1dB NF Gas Rth Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 27mA VDS = 3V, IDS = 2.7mA IGS = -2.7µA VDS = 6V IDS = 40mA f = 2GHz VDS = 3V IDS = 10mA f = 2GHz Channel to Case Min. 35 -0.7 -5 19.0 18.0 - Limit Typ. Max. 55 75 50 -1.2 20.0 19.0 0.55 18.5 300 -1.7 400 Unit mA mS V V dBm dB dB dB °C/W G.C.P.: Gain Compression Point Edition 1.2 July 1999 1 FSU01LG General Purpose GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 400 Total Power Dissipation (mW) 60 Drain Current (mA) 300 50 -0.2V VGS =0V 200 40 30 20 10 -0.4V -0.6V -0.8V -1.0V -1.2V 100 0 50 100 150 200 1 2 3 4 5 Case Temperature (°C) Drain-Source Voltage (V) ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT IDS = 10mA f = 2.0 GHz 19.5 Associated Gain (dB) 19.0 18.5 18.0 17.5 VDS = 6V 5V NOISE FIGURE vs. DRAIN-SOURCE CURRENT IDS = 10mA f = 2.0 GHz 0.9 VDS = 6V Noise Figure (dB) 4V 0.8 0.7 0.6 0.5 5V 4V 2, 3V 2V 10 20 30 40 10 20 30 40 Drain-Source Current (mA) Drain-Source Current (mA) 2 FSU01LG General Purpose GaAs FET +j50 +j100 +j25 2 3 4 GHz S11 S22 +90° 0.2 S21 S12 +j10 +j250 1 2 1 4 GHz 0.4 GHz 4 0.4 GHz 3 0 10 25 50Ω 100 250 0.4 GHz 0.4 GHz 180° 3 2 1 .05 0.1 0° SCALE FOR |S21| SCALE FOR |S12| 1 -j10 2 4 GHz 4 GHz 3 1 -j250 -j25 3 2 -j100 -90° -j50 S-PARAMETERS VDS =6V, IDS = 40mA FREQUENCY (MHZ) 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 S11 MAG .987 .985 .974 .966 .954 .936 .935 .910 .904 .888 .871 .856 .844 .829 .812 .798 .788 .779 .769 S21 ANG -13.8 -20.3 -27.1 -34.1 -40.0 -47.0 -53.3 -58.7 -65.4 -71.0 -77.0 -82.5 -88.1 -93.3 -98.4 -103.1 -107.9 -112.6 -117.3 S12 ANG 168.3 162.8 157.0 151.3 146.4 140.5 135.2 130.8 125.2 120.7 115.5 110.9 106.2 101.9 97.7 93.8 89.7 85.6 81.7 S22 ANG 77.9 76.2 72.0 68.6 65.2 60.3 56.5 51.8 48.8 45.2 42.6 39.5 35.7 30.9 27.2 26.0 22.9 20.9 19.4 MAG 4.507 4.488 4.421 4.367 4.309 4.212 4.158 4.037 3.980 3.885 3.797 3.696 3.609 3.511 3.400 3.323 3.249 3.176 3.101 MAG .011 .016 .021 .026 .030 .035 .038 .043 .047 .049 .052 .055 .057 .060 .060 .061 .062 .063 .063 MAG .812 .812 .807 .803 .793 .786 .778 .766 .761 .748 .739 .729 .716 .704 .692 .687 .681 .674 .668 ANG -6.7 -10.0 -13.2 -16.4 -19.8 -23.0 -25.8 -28.9 -31.8 -34.3 -37.5 -40.2 -43.0 -45.8 -47.9 -50.3 -52.8 -55.3 -58.0 Download S-Parameters, click here 3 FSU01LG General Purpose GaAs FET OUTPUT POWER & IM3 vs. INPUT POWER 20 18 16 Total Output Power (dBm) 14 12 10 8 6 4 2 0 -2 -4 -6 VDS = 6V f = 2 GHz ∆f = +1 MHz IDS = 40mA Pout Single Tone 2-Tone -10 -20 -40 IM3 -50 -12 -10 -8 -6 -4 -2 0 2 4 6 -60 Total Input Power (dBm) 4 IM3 (dBc) -30 FSU01LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Package 4.78±0.5 1.5±0.3 (0.059) 1.78±0.15 1.5±0.3 (0.07) (0.059) 1.5±0.3 (0.059) 1.0 (0.039) 1 1.78±0.15 1.5±0.3 (0.07) (0.059) 4.78±0.5 4 3 2 0.5 (0.02) Gold Plated Leads 1.3 Max (0.051) 1. 2. 3. 4. 0.1 (0.004) Gate Source Drain Source Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 5