FSX017LG

FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm (Typ.)@12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION The FSX017LG is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) For reliable operation of this FET: 1. The drain - source operating voltage (VDS) should not exceed 4 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Symbol VDS VGS Ptot Tstg Tch Condition Rating 8 -5 220 -65 to +175 175 Unit V V mW °C °C Note ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Thermal Resistance CASE STYLE: LG Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested. Symbol IDSS gm Vp VGSO P1dB G1dB Rth Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 27mA VDS = 3V, IDS = 2.7mA IGS = -2.7µA VDS = 4V IDS = 30mA f = 12GHz Channel to Case Min. 35 -0.7 -5 15.0 7.0 - Limit Typ. Max. 55 50 -1.2 16.0 8.0 300 75 -1.7 400 Unit mA mS V V dBm dB °C/W G.C.P.: Gain Compression Point Edition 1.2 July 1999 1 FSX017LG General Purpose GaAs FET POWER DERATING CURVE Total Power Dissipation (mW) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 250 Drain Current (mA) 200 150 100 50 0 50 100 150 200 60 50 VGS = 0V -0.2V 40 30 20 10 1 2 3 4 5 -0.4V -0.6V -0.8V -1.0V -1.2V 6 Ambient Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER 17 16 15 14 13 12 11 10 9 0 1 2 3 4 VDS=4V IDS = 30mA f = 12GHz Pout Output Power (dBm) ηadd 30 20 10 6 7 8 9 10 11 5 2 ηadd (%) FSX017LG General Purpose GaAs FET +j50 +j100 +j25 12 16 10 18 14 20 16 2 SCALE FOR |S12| S11 S22 +90° 0.2 S21 S12 4 0.1 6 2 +j250 0.5 GHz +j10 0 12 25 50Ω 100 18 250 0.5 GHz 180° 4 3 20 0.5 GHz 8 12 16 18 16 18 4 8 SCALE FOR |S21| 20 0° 6 10 8 6 4 4 20 2 10 0.5 GHz -j10 -j250 -j25 2 -j100 -90° -j50 FREQUENCY (MHZ) S11 MAG ANG S-PARAMETERS VDS = 4V, IDS = 30mA S21 S12 MAG ANG MAG ANG S22 MAG ANG 500 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 .992 .915 .795 .690 .606 .628 .655 .658 .630 .570 .513 -15.5 -58.9 -104.8 -144.0 167.3 130.0 98.8 70.8 44.8 14.0 -18.3 4.814 4.244 3.300 2.839 2.542 2.237 1.924 1.633 1.466 1.394 1.296 165.8 127.5 86.9 54.1 18.1 -16.3 -51.0 -82.5 -113.5 -147.7 172.6 .012 .039 .053 .054 .052 .052 .067 .075 .085 .096 .112 78.8 51.8 24.1 6.4 -13.4 -16.5 -33.2 -51.9 -75.4 -107.7 -151.6 .735 .709 .670 .632 .533 .484 .544 .594 .650 .648 .619 -9.5 -35.8 -60.0 -74.7 -95.2 -133.0 -173.9 158.0 134.1 109.1 68.1 Download S-Parameters, click here 3 FSX017LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 1.5±0.3 (0.059) 1.78±0.15 1.5±0.3 (0.07) (0.059) 1.5±0.3 (0.059) 1.0 (0.039) 1 1.78±0.15 1.5±0.3 (0.07) (0.059) 4.78±0.5 4 3 2 0.5 (0.02) 1.3 Max (0.051) 1. 2. 3. 4. 0.1 (0.004) Gate Source Drain Source Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4