KP035J

P02221B2P 500mW InGaP HBT Amplifier ♦Features ·1.8 to 2.5GHz Frequency Band ·+26.5dBm Output Power ·+43dBm Output IP3 ·+5V Single Supply Voltage ·14dB Gain at 2.14GHz ·Highly Reliable InGaP HBT ·Pb-free SOT-89 SMT Package ·AuSn Die Attach for Low and Stable Thermal Resistance Technical Note ♦Functional Diagram Pin No. 1 2, 4 3 Function RF Input Ground RF Output 4 1 2 3 ♦Ordering Information Part No P02221B2P ♦Applications ·Wireless communication system ·Cellular, PCS, PHS, W-CDMA, WLAN Description HBT Amplifier 2.14GHz Application Circuit Number of devices Container 7” Reel Anti-static Bag 1000 1 KP035J ♦Description P02221B2P is a high performance InGaP/GaAs HBT amplifier housed in a low-cost SOT-89 package. The hetero-junction epitaxial structure has been designed to achieve low distortion, which leads to high IP3. The device needs only a +5V single power supply voltage in operation. Utilization of AuSn die attach has realized a low and stable thermal resistance. ♦Absolute Maximum Ratings (@Tc=25°C) Parameter Symbol Value Units Device Voltage Vd 6 V Device Current Id 500 mA RF Input Power Pin 15 dBm (continuous) Power Dissipation Pt 2 W Junction Temperature Tj +150 °C Storage Temperature Tstg - 40 to +150 °C Tc: Case Temperature. Operating the device beyond any of these values may cause permanent damage. ♦Electrical Specifications (@Tc=+25°C, Vs=+5V) Measured at 2140MHz using application circuit. Parameter Consumption Current Output IP3 Output Power @ 1dB Gain Compression Small Signal Gain Input Return Loss Output Return Loss Thermal Resistance Symbol Is IP3_12 IP3_15 P1dB Ga S11 S22 Rth Junction-Case Pin=-10dBm Test Conditions RF=off Pout=12dBm S.C.L. Pout=15dBm S.C.L. --Min. 247 --38.5 24.5 12.5 ------Values Typ. 294 43 41 26.5 14 -10 -8 37 Max. 341 --------------Units mA dBm dBm dBm dB dB dB °C/W Specifications and information are subject to change without notice. Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com -1- 2005-07 Web Site : www.eudyna.com P02221B2P 500mW InGaP HBT Amplifier ♦Application Circuit : 2140MHz Technical Note R1 Vs 3.3Ω R2 R3 360Ω L2 15nH RF in C6 L3 DUT 0.75pF 360Ω C1 C2 C3 1000pF 18pF 1uF L1 16nH Vd 50Ω EL1 4.5deg C5 C7 RF out 82pF 2.4pF 82pF 2.7nH C4 20 S-parameters (dB) 10 0 -10 -20 -30 -40 1.9 2.0 2.1 Frequency (GHz) 2.2 2.3 S22 S11 S12 S21 Gnd R2 R3 R1 C1 C2 C3 L1 C5 Vs RF in C6 L3L2 C4 C7 RF out Specifications and information are subject to change without notice. Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com -2- 2005-07 Web Site : www.eudyna.com P02221B2P 500mW InGaP HBT Amplifier [Typical Performance] KP035J Application Circuit (Vs=5V, Tc=25°C, f=2140MHz) Pout, Gain, IP3, Id vs Pin 50 45 40 35 30 25 20 15 10 5 0 350 340 330 320 310 300 290 280 270 260 250 10 15.0 14.8 14.6 14.4 14.2 14.0 13.8 13.6 13.4 13.2 13.0 2.10 Technical Note Gain vs Frequency IP3 f1=2139.5MHz f2=2140.5MHz Pin=-10dBm Pout (dBm) Gain (dB) IP3 (dBm) Is Gain Pout -10 -5 0 Pin (dBm) 5 Gain (dB) Is (mA) 2.12 2.14 2.16 2.18 Frequency (GHz) IM3, IM5 vs Pout 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 0 f1=2139.5MHz ACLR vs Pout 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 0 3GPP Test Model 1 with 64DPCHs ABS(I+Q)=100% f2=2140.5MHz IM3 IM5 5 10 15 20 25 ACLR 5MHz (dBc) IM3 (dBc) IM5 (dBc) 5 10 15 20 25 Pout (dBm) Pout (dBm) Specifications and information are subject to change without notice. Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com -3- 2005-07 Web Site : www.eudyna.com P02221B2P 500mW InGaP HBT Amplifier ♦Attention to Heat Radiation In the layout design of the printed circuit board (PCB) on which the InGaP HBT Amplifier are attached, the heat radiation to minimize the device junction temperature should be taken into account, since it significantly affects the MTTF and RF performance. In any environment, the junction temperature should be lower than the absolute maximum rating during the device operation and it is recommended that the thermal design has enough margin. The junction temperature can be calculated by the following formula. Tjmax=(Vd*Id-Pout)(Rth+Rboard+Rhs)+Ta Vd: Device voltage Id: Device current Pout: Output power Rth: Thermal resistance between junction and case Rboard: Thermal resistance of PCB Rhs: Thermal resistance of heat sink Ta: Ambient temperature Tjmax: Maximum junction temperature Generally, there are two ways of heat radiation. One is the plated thru hole and the other is the heat sink. Key points will be illustrated in each case below. Note that no measure against oscillation is adopted in the figures. In the design of circuit and layout, you should take stabilizing into account if necessary. [Using Thru Hole] 4-R0.3 2 Technical Note □Place more than 2 machine screws as close to the ground pin (pin 4) as possible. The PCB is screwed on the mounting plate or the heat sink to lower the thermal resistance of the PCB. □Lay out a large ground pad area with multiple plated thru holes around pin 4 of the device. □The required matching and feedback circuit described in the application circuit examples should be connected to the device, although it is not shown in the figure below. [Using Heat Sink] φ 3 P lated Thru Hole for 2.5 Mach ine Screws φ 5 Solder mask Keepout Heatsink 1.9× 2.85 (4-R0.3) 0.6 φ 0.4 P lated Thr u Holes 2.95 Gran d P lane P ackage Outline Gran d P lane φ 3 P lated Thru Hole for 2.5 Mach ine Screws φ 5 Solder mask Keepout If you cannot get the junction temperature lower than the absolute maximum rating only with the plated thru holes, then you need to employ the heat sink. Attaching the heat sink directly under pin 4 of the device improves the thermal resistance between junction and ambient. φ 3 P lated Thru Hole for 2.5 Mach ine Screws φ 5 Solder mask Keepout φ 0.3 P lated Thr u Holes P ackage Outline φ 0.4 P lated Thr u Holes Gran d P lane φ 5 Solder mask Keepout φ 3 P lated Thru Hole for 2.5 Mach ine Screws □Multiple plated thru holes are required directly below the device. [Note] □Ground/thermal vias are critical for the proper device performance. Drills of the recommended diameters should be used in the fabrication of vias. □Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. □Mounting screws can be added near the part to fasten the board to heat sink. Ensure that the ground/thermal via region contacts the heat sink. □Do not put solder mask on the backside of the PCB in the region where the board contacts the heat sink. □RF trace width depends upon the PCB material and construction. □Use 1 oz. Copper minimum. Specifications and information are subject to change without notice. Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com -4- 2005-07 Web Site : www.eudyna.com P02221B2P 500mW InGaP HBT Amplifier ♦Package Drawing 4.5 ± 0.1 (1.7) 1.6+0.15 -0.2 2.5 ± 0.1 φ 1.0 ± 0.3 (0.25) (45º) 4.0 ± 0.25 0.1 ± 0.05 Technical Note [Note] The reflow profile is different from the one for Sn-Pb plating If you use a soldering iron to attach the devices, please beware of the followings. (1) The tip of the iron should be grounded. Or you should use an iron that is electrostatic discharge proof. (2) The temperature of the iron tip should be lower than 240°C and the soldering should be completed within 10 seconds. 1.1 ± 0.3 ♦Attention to ESD 0.42+0.03 -0.02 1.5 ± 0.1 0.42 ± 0.06 0.47 ± 0.06 1 2 3 0.42 ± 0.06 1.5 ± 0.08 1.5 ± 0.08 ♦Laser Marking 1.65MAX B A: 0.67+ 0 -0.1 B: 0.45 A 1.3+0.1 -0 Generally, GaAs devices are very sensitive to electrostatic discharge (ESD). To reduce the ESD damage, please pay attention to the followings. The devices should be stored with the electrodes short-circuited by conductive materials. The workstation and tools should be grounded for safe dissipation of the static charges in the environment. The workpeople are to wear anti-static clothing and wrist straps. For safety reasons, resistance of 10MΩ or so should exist between workpeople and ground. ♦Moisture Sensitivity Level The moisture sensitivity level (MSL) of P02221B2P is 1, which means that the “floor life” is unlimited below 30°C with relative humidity (Rh) of 85%. 123 (0.65) ♦Reliability and Environmental Issues Eudyna’s Yokohama Works, where the devices are manufactured, has been accredited ISO-14001 since 1999. We control the toxic materials in our products in accordance with PRTR regulation. **P 1,2,3: Lot No. * * P : P roduct Type ♦Convection Reflow Profile (Recommended) 30 0 26 0 ± 5°C 5sec max ♦ Lead and Fluoride To realize Pb-free products, Sn-Bi is used for the lead frame plating. Any fluoride that has been determined by the Montreal agreement is not used in the products. ♦ Compliance with RoHS This product is in compliance with Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 for the restriction of use of certain hazardous substances in electrical and electronics equipment (RoHS Directives). Temperature (°C) 20 0 10 0 P reheat:16 0°C 90 sec 0 0 60 60 12 0 Time abo ve 230°C < 45 sec 18 0 24 0 Time (sec) Specifications and information are subject to change without notice. Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com -5- 2005-07 Web Site : www.eudyna.com P02221B2P 500mW InGaP HBT Amplifier ♦Caution InGaP/GaAs HBT chips are used in P02221B2P. For safety reasons, you should attend to the following matters: (1) Do not put the products in your mouse. Technical Note (2) Do not make the products into gases or powders, by burning, breaking or chemical treatments. (3) In case you abandon the products, you should obey the related laws and regulations. The information in this document is subject to change without notice. Please refer for the most up-to-date information before you start design using Eudyna’s devices. Any part of this document may not be reproduced or copied. Eudyna does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of Eudyna’s products described in this documents. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Eudyna or others. Descriptions of circuits and other related information in this document are for illustrative purpose in the examples of the device operation and application. Eudyna does not assume any responsibility for any losses incurred by customers or third parties arising from the use of the circuits and other related information in this document. Eudyna’s semi-conductor device products are designed and manufactured for use in the standard communication equipment. Customers that wish to use these products in applications not intended by Eudyna must contact Eudyna’ sales representatives in advance. Generally, it is impossible to eliminate completely the defects in semi-conductor products, while Eudyna has been continually improving the quality and reliability of the products. Eudyna does not assume any responsibility for any losses incurred by customers or third parties by or arising from the use of Eudyna’s semi-conductor products. Customers are to incorporate sufficient safety measures in the design such as redundancy, fire-containment and anti-failure features. Specifications and information are subject to change without notice. Eudyna Devices Inc. 1,Kanai-cho, Sakae-ku, Yokohama, 244-0845 Japan Phone : +81-45-853-8150 Fax : +81-45-853-8170 e-mail : www-sales-s@eudyna.com -6- 2005-07 Web Site : www.eudyna.com