P0120003P

P0120003P 800mW GaAs Power FET (Pb-Free Type) ♦Features · Up to 2.7 GHz frequency band · Beyond +27 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure Pin No. 1 2, 4 3 Technical Note SUMITOMO ELECTRIC ♦Functional Diagram Function Input/Gate Ground Output/Drain 4 1 Number of devices 2 3 Container 7” Reel Anti-static Bag ♦Ordering Information Part No P0120003P KP023J Description GaAs Power FET 2.11-2.17GHz Application Circuit 1000 1 ♦Applications ·Wireless communication system ·Cellular, PCS, PHS, W-CDMA, WLAN ♦Description P0120003P is a high performance GaAs MESFET housed in a low-cost SOT-89 package. Our originally developed "pulse-doped" channel structure has realized low distortion, which leads to high IP3. The channel structure also achieved an extremely low noise figure. The details about pulse-doped FET channel are described in our products catalog. Utilization of AuSn die attach has realized a low and stable thermal resistance. The lead frame is plated with Sn-Bi to make the device Pb-free. SEI’s long history of manufacturing has cultivated high device reliability. The estimated MTTF of the FET is longer than 15years at Tj of 150°C. You can see the details in Reliability and Quality Assurance. ♦Absolute Maximum Ratings (@Tc=25°C) Parameter Symbol Value Units Drain-Source Voltage Vds 8 V Gate-Source Voltage Vgs -4 V Drain Current Ids Idss --RF Input Power (*) Pin 20 dBm (continuous) Power Dissipation Pt 2.2 W Junction Temperature Tj 125 °C Storage Temperature Tstg - 40 to +125 °C Tc: Case Temperature. Operating the device beyond any of these values may cause permanent damage. (*) Measured at 2.1GHz with our test fixture matched to OIP3. ♦Electrical Specifications (@Tc=25°C) Parameter DC Saturated Drain Current Transconductance Pinchoff Voltage Gate-Source Breakdown Voltage Thermal Resistance RF Frequency Output Power @ 1dB Gain Compression Small Signal Gain Output IP3 Power Added Efficiency Symbol Idss gm Vp |Vgs0| Rth f P1dB G OIP3 ηadd Vds=6V Ids=220mA f=2.1GHz 29 12 ----43 56 Test Conditions Vds=3V, Vg=0V Vds=6V, Ids=300mA Vds=6V, Ids=30mA Igso= - 30µA Channel-Case Min. --250 - 3.0 3.0 --Values Typ. ----------Max. 850 --- 1.7 --45 2.7 --------Units mA mS V V °C/W GHz dBm dB dBm % Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -1- P0120003P 800mW GaAs Power FET (Pb-Free Type) ♦Typical Characteristics Technical Note SUMITOMO ELECTRIC 4 Total Pow er Dissipation(W) Power Derating Cur ve Drain C urrent( mA) 1000 750 500 250 0 Transfer Curve Vgs=0 V -0.5V -1.0V -1.5V -2.0V 3 2 1 0 0 50 100 Tc (°C) 150 2 00 0 2 4 Vds ( V) 6 8 ♦Load-pull Characteristics (Typical Data) Tc=25°C, Vds=6V, Ids=220mA, Common Source, Zo=50Ω (Calibrated to device leads) 1.0 0 .6 0 .8 2 .0 6. 0 35 13 3 .0 4 .0 5 .0 90 1. 2 GH z 45 10.0 0.2 0.6 0.8 2.0 3.0 4.0 5.0 0.4 1.0 0 - 0. .0 -2 6 -1 35 - 0. 4 Scale fo r |S 2 1| -0.8 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -2- -1.0 -4. 0 0 - 5.0 .0 -0.2 1. 2 GH z 0 0 - 10 - 10 .0 -3. 04 0 .4 2. 4 GH z 0 .2 . 4. 0 2. 0 S2 1 1. 2 GH z 2. 4 GH z S1 2 S1 1 2. 4 GH z 1 0.0 Scale fo r |S 1 2| - 180 0 0 2. 4 GH z 0. 02 0. 04 0. 06 0 S2 2 1. 2 GH z 5 -4 -90 -90 P0120003P 800mW GaAs Power FET (Pb-Free Type) Tc=25°C, Vds=6V, Ids=180mA, Common Source, Zo=50Ω (Calibrated to device leads) Technical Note SUMITOMO ELECTRIC 1.0 0.6 0.8 90 2.0 6. 0 5 5 13 1. 2 GH z 45 10.0 0.8 1. 1.0 0.6 3.0 4.0 5.0 0.2 0.4 2.0 0 - 0. 6 -0.8 .0 -2 -1 35 -0 .4 Scale fo r |S 2 1| Ids=220mA Freq (GHz ) S11 M ag 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.760 0.756 0.754 0.754 0.755 0.755 0.754 -1.0 S11 Ang -161.1 -172.5 178.0 169.6 162.0 154.9 148.0 S11 Ang -161.1 -172.5 178.0 169.6 162.0 154.9 148.0 Ids=180mA Freq (GHz ) S11 M ag 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.758 0.754 0.753 0.753 0.753 0.753 0.752 [Note] You can download the S-parameter list from our web site: www.sei.co.jp/GaAsIC/ Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -3- - 4. 0 -5.0 5 -0.2 1. 2 GH z S21 M ag 5.548 4.827 4.263 3.812 3.454 3.163 2.925 S21 M ag 5.539 4.820 4.256 3.805 3.449 3.158 2.920 -10.0 .0 -3 . .0 0.. 4 2. 4 GH z 0.2 2 3.0 4 .0 5.0 4. 0 2. 0 S2 1 1. 2 GH z 2. 4 GH z S1 2 0 S1 1 2. 4 GH z 10.0 Scale fo r |S 1 2| -180 0 0 2. 4 GH z 0. 02 0. 04 0. 06 S2 2 1. 2 GH z 5 5 -4 -90 -90 S21 Ang 77.6 69.3 61.7 54.6 47.9 41.3 34.8 S21 Ang 77.7 69.3 61.8 54.7 48.0 41.4 34.9 S12 M ag 0.049 0.052 0.056 0.060 0.063 0.067 0.072 S12 M ag 0.051 0.054 0.057 0.061 0.065 0.069 0.073 S12 Ang 36.8 34.4 32.3 30.0 27.7 25.2 22.4 S12 Ang 35.5 33.1 30.9 28.6 26.3 23.8 21.0 S22 M ag 0.204 0.212 0.219 0.225 0.229 0.233 0.238 S22 M ag 0.215 0.223 0.229 0.235 0.239 0.243 0.248 S22 Ang -160.1 -166.9 -172.7 -178.1 176.5 171.2 164.9 S22 Ang -161.3 -168.2 -174.0 -179.5 175.0 169.6 163.4 P0120003P 800mW GaAs Power FET (Pb-Free Type) Ids=220mA 80 60 IP3 40 20 Pout ( dBm) IM3 (dBm) IP3 ( dBm ) IM3 /Pou t ( dB c) ηadd ( %) 0 -20 -40 -60 -80 -1 -100 - 20 - 15 - 10 -5 0 5 10 15 20 IM3 IM3 /Pou t Gain Pout Pout ( dBm) IM3 ( dBm) IP3 ( dBm ) IM3 /Pou t ( dB c) ηadd ( %) 40 20 0 -20 -40 -60 -80 -100 -20 -15 - 10 -5 Gain 80 60 IP 3 Technical Note SUMITOMO ELECTRIC Ids=180mA Pout ηadd ηadd IM3 IM3 /Pou t 0 5 10 15 20 Pin ( dBm) Pin (dBm) Device : P 0 120003P Freq u ency: f 1= 2. 1 GH z, f 2= 2. 1 01 GH z Bias : Vds =6 V, Id s =220 mA Source Mat ching: Mag 0. 6 1 A ng - 159. 3° Lo ad M at ching : M ag 0.48 A n g - 1 55.4 ° Device :P 01 2 000 3P Frequency: f 1= 2. 1 GH z, f 2= 2. 1 01 GH z Bias :Vds =6 V,Id s =180 mA So urce M atching:Mag 0. 61 A n g -159. 3° Lo ad Mat ching: Mag 0 .4 37 A n g - 16 0. 7° [Note] Pout and η add are measured by one signal. The data for the figures above were measured with the load impedance matched to IP3. Id =220mA Pin (d Bm) -15.0 -10.0 -5.0 0.0 5.0 10.0 15.0 Pin (d Bm) -15.0 -10.0 -5.0 0.0 5.0 10.0 15.0 Po u t (d Bm) -2.0 3.2 8.1 13.1 18.0 23.1 27.6 Po u t (d Bm) -1.7 3.5 8.4 13.4 18.4 23.4 27.6 Gain (d B) 13.0 13.2 13.1 13.1 13.0 13.1 12.6 Gain (d B) 13.3 13.5 13.4 13.4 13.4 13.4 12.6 IM 3 (d Bm) -75.0 -70.2 -59.5 -46.0 -28.5 -2.5 11.1 IM 3 (d Bm) -75.4 -68.7 -56.1 -41.3 -23.0 0.6 11.1 IM 3/Po u t (d Bc) -73.0 -73.3 -67.7 -59.0 -46.5 -25.7 -16.5 IM 3/Po u t (d Bc) -73.7 -72.2 -64.5 -54.7 -41.3 -22.8 -16.5 IP3 (d Bm) 34.5 39.9 42.1 42.6 41.0 35.2 33.8 IP3 (d Bm) 35.1 39.6 40.7 40.7 39.0 33.9 34.0 Id (mA ) 220.5 219.1 216.4 212.0 205.3 207.5 252.6 Id (mA ) 178.2 177.1 174.8 171.2 165.1 173.1 216.4 ηad d (%) 0.0 0.2 0.5 1.5 4.9 15.7 35.8 ηad d (%) 0.1 0.2 0.6 2.0 6.6 20.1 41.9 Id =180mA Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -4- P0120003P 800mW GaAs Power FET (Pb-Free Type) Tc=2 5° C, Vd s =6 V, Id s =22 0mA , Pin = 0d Bm [Po ut -Ls t ate ] f = 2 .1GH z Γ po ut : 0. 46∠ 13 5. 5 So urce : 0 .76∠ -16 6.1 Po u t ma x : 14 .4d Bm +j 5 0 +j 2 5 +j 1 0 0 +j 2 5 Technical Note SUMITOMO ELECTRIC [IP3 -Ls ta te] f1 = 2. 1 GH z f2 = 2. 1 01 GH z Γ IP 3 : 0. 52∠ -1 55 .9 So u rce : 0. 73 ∠ -1 70 .1 IP3 ma x : 40 .4 5d Bm +j 5 0 +j 1 0 0 13.15 14.4 39.2 50 Ω 10 0 Ω 25 Ω 25 Ω 50 Ω 10 0 Ω 40.45 -j 2 5 -j 5 0 -j 1 0 0 -j 2 5 -j 5 0 -j 1 0 0 Tc=2 5° C, Vd s=6 V, Id s=1 8 0 mA , Pin = 0d Bm [Po ut -Ls t ate ] f = 2 .1GH z Γ po ut : 0. 46∠ 13 8. 7 So urce : 0 .76∠ -16 6. 1 Po u t ma x : 14 .4d Bm +j 5 0 +j 2 5 +j 1 0 0 [IP3 -Ls ta te] f1 = 2. 1 GH z f2 = 2. 1 01 GH z Γ IP 3 : 0. 42∠ -1 60 .2 So u rce : 0. 73 ∠ -1 70 .1 IP3 ma x : 39 .3d Bm +j5 0 +j2 5 +j1 00 13.9 14.4 36.8 50 Ω 10 0 Ω 25 Ω 25 Ω 39.3 50 Ω 100 Ω -j 2 5 -j 5 0 -j 1 0 0 -j25 -j50 -j100 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -5- P0120003P 800mW GaAs Power FET (Pb-Free Type) ♦NF Characteristics Ids=220mA 1.0 0.6 0 .8 Technical Note SUMITOMO ELECTRIC Ids=180mA 1.0 0.6 0.8 Ids=160mA 2.0 0.6 0 .8 1.0 2.0 3.0 0 0.2 3 .0 4.0 5.0 2.0 1 0 .0 10.0 10.0 10 .0 0.2 0.8 2.0 0.4 0.6 1.0 3.0 4.0 5.0 0 .4 -0 .4 -0 .4 -0 .0 .0 -2 -2 - 0.6 -0 . 6 -0.8 - 0.6 -0 .8 -1.0 - 0.8 [Note] The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C. -1 .0 Vds=6V Freq. (G Hz ) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 NFmin (dB) 0.58 0.55 0.72 0.77 0.95 0.98 1.07 1.16 1.55 M ag 0.43 0.35 0.28 0.36 0.40 0.47 0.51 0.55 0.47 Γop t Ang(deg) -90.8 -35.4 13.4 61.4 99.2 129.9 159.5 -173.9 -141.6 Rn/50 0.09 0.13 0.16 0.16 0.13 0.09 0.05 0.04 0.12 Vds=6V Freq. (G Hz ) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 NFmin (dB) 0.51 0.51 0.65 0.71 0.90 0.91 0.99 1.08 1.49 Γop t M ag Ang(deg) 0.44 -89.2 0.33 -42.7 0.27 6.7 0.33 56.8 0.34 96.5 0.45 127.5 0.48 157.2 0.53 -176.2 0.42 -140.2 Rn/50 0.08 0.11 0.14 0.13 0.13 0.08 0.05 0.04 0.12 Ids=220mA A ss ociat ed Gain(dB) 21.8 20.3 18.6 17.6 16.5 15.7 15.0 14.3 13.4 Ids=180mA A ss ociat ed Gain(dB) 21.9 19.9 18.3 17.3 16.2 15.5 14.8 14.1 13.2 -1 .0 Vds=6V Freq. (G Hz ) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.0 1.8 1.6 1.4 NF (dB) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 Frequency (GHz) -2 .0 NFmin (dB) 0.53 0.49 0.63 0.69 0.88 0.89 0.96 1.04 1.43 M ag 0.43 0.33 0.26 0.32 0.34 0.43 0.46 0.52 0.41 Γop t Ang(deg) -93.5 -45.3 3.9 54.5 94.5 125.8 156.0 -177.3 -141.5 Rn/50 0.08 0.11 0.14 0.14 0.12 0.09 0.05 0.04 0.12 Ids=160mA Associat ed Gain(dB) 21.6 19.8 18.2 17.2 16.1 15.4 14.7 14.1 13.1 Ids=220mA Ids=180mA Ids=160mA 2.0 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -6- -4 . 4 40 - 5 .0 .0 .0 -3 .0 .0 .0 -4 -4. 0 - 5.0 . -3 . .0 - 4.0 . -5 .0 -0.2 2.05 -1 -10.0 1.55 - 0.2 1.99 - 0.2 1.93 -1 0 .0 - 10 .0 1.49 0 1.43 10 .0 0.2 0.8 2.0 0.4 0.6 1.0 3.0 4.0 5.0 0.2 0.8 2.0 0.4 0.6 3.0 1.0 4.0 5.0 0 0 0 0.2 4.0 5 .0 0. 4 4 4 0.. 4 4 -3. 0 0. 4 4 3.0 4.0 5.0 0.2 . 10 .0 2.5 P0120003P 800mW GaAs Power FET (Pb-Free Type) ♦Application Circuit : 2110-2170MHz C1 C1 RF in ( Rs=50Ω) C2 Z1 Z2 L1 C5 R1 C3 D.U. T L2 Technical Note SUMITOMO ELECTRIC C4 RF out ( RL=50Ω) Z3 Z4 Vg Vd KP023J Ref. Des . R1 C1 C2 C3 C4 C5 L1 L2 Value 82Ω 1pF 1pF 0. 1µ F 4pF 0. 1µ F 27nH 27nH Part Number SUSUMU RR0816 s eries MURATA GRM18 s eries TOKO LL1608 series RF in C1 C2 R1 C3 Vg (-0.7~-2V) L1 C4 L2 C5 RF out Vd (+6V) 20 S21 10 S-parameters (dB) Ref. Designator Z1 Z2 Z3 Z4 Electrical length @ 2.1GHz (deg) 4.08 13.61 8.62 6.38 0 S22 S11 All microst rip lines have a line imp edance of 50Ω . -10 -20 S12 -30 1.9 2 2.1 Fre que ncy ( GH z) 2.2 2.3 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -7- P0120003P 800mW GaAs Power FET (Pb-Free Type) [Typical Performance] KP023J Application Circuit Vds=6V, Ids=220mA, Tc=25°C Frequency characteristics were measured with Pout at 17dBm. Pout,G ain,IP3 ,Ids vs Pin 45 40 35 Pout (dBm) Gain (dB) IP3 (dBm ) 30 25 20 15 10 -1 1 3 Po ut Gain 5 7 9 Ids IP 3 215 210 205 IM3 (dBc) IM5 (dBc) Ids (m A) 200 195 190 185 180 11 Technical Note SUMITOMO ELECTRIC -35 -40 -45 -50 -55 -60 -65 10 12 IM3 ,Im5 vs Pou t IM3 IM5 14 16 18 20 22 Pin (dBm) IP3 vs Fre quency Vds=6 V Vds=5 V IP3 (dBm ) 42.0 41.5 41.0 40.5 40.0 39.5 39.0 38.5 2120 2140 2160 2180 38.0 2100 Pout (dBm) IP3 vs Fre quency 43 42 41 IP3 (dBm ) 40 39 38 37 36 35 2100 Ids=2 20m A Ids=1 90m A Vds=4 V Ids=1 60m A 2120 2140 2160 2180 Fre quency (MHz) 11.6 11.4 11.2 11.0 10.8 10.6 10.4 2100 2120 2140 2160 2180 Vds=4 V Gain ( dB) Gain vs Fre quen cy Vds=6 V Vds=5 V Gain (dB) 11.4 11.3 11.2 11.1 11.0 2100 11.5 Fre quency (MHz) Gain vs Fre quen cy Ids=2 20m A Ids=1 90m A Ids=1 60m A 2120 2140 2160 2180 Fre quency (MHz) Fre quency (MHz) Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -8- P0120003P 800mW GaAs Power FET (Pb-Free Type) ♦Caution: Power Supply Sequence For safe operation, electric power should be supplied in following sequence. First, the negative voltage should be applied on the gate, and the voltage should be more negative than the pinch-off voltage when you turn on the power supply. Then, drain bias can be applied. Finally, you can turn on the RF signal. When turning off the power supply, the sequence should be (1)RF signal (2)Drain (3)Gate. +6V Technical Note SUMITOMO ELECTRIC R1 R3 Vds Q1a Q1b R4 Ga Gat e Vo lt age Drain Vo lt age 0V On Bias Vo ltage Off R2 R5 Vgs P0110003P P0120003P Application Circuit GND 0V Bias Vo ltage On More Than 1 m S Off More Than 1 m S GND -5V ♦Bias Circuit [Passive Biasing] If you use a fixed bias circuit, you sometimes need to control the gate bias to get the same Ids, since the devices have some margin of pinch-off voltage (Vp) variation depending on the wafer lots. If you employ a fixed Vgs biasing for your system, you should closely monitor the drain current, particularly when new wafer lots are introduced. [Active Biasing] We recommend using an active bias circuit, which can eliminate the influence of Vp variation. An example of an active bias circuit called “current mirror ” is shown below. Here, two PNP transistors having the minimum variation of Ibe characteristics are used. These transistors adjust Vgs by changing Vds automatically. It will realize the constant current characteristics, regardless of the temperature. The circuit should be connected directly in line with where the voltage supplies would be normally connected with the application circuit. Of course a matching circuit is required, but it is not shown in this figure. [Note] In the measurements of RF performance (Pout vs Pin, etc) using the application circuit described before, the active bias circuit herein was not utilized. The application circuits were biased directly from two power supplies. Vds Ids Q1 R1 R2 R3 R4 R5 +5.9V 220mA UM T 1N (Rohm) 16Ω 1/10W 1.8kΩ 1/10W 0.22Ω RL s eries (SUSU M U ) 1kΩ 1/10W 1.3kΩ 1/10W If you used Ids other than 220mA, you can calculate the resistance values as follows: R4 set to be 1kΩ I2:Ic of Q1b I1: Ic of Q1a Vbe1: Vbe of Q1a Vbe2: Vbe of Q1b R1=(+6V-Vds+Vbe2-Vbe1)/I1=(+6V-Vds)/I1 R2=(Vds-Vbe2)/I1 R3=(+6V-Vds)/(Ids+I2) R5=|-5V-Vgs|/I2 ♦Attention to Heat Radiation In the layout design of the printed circuit board (PCB) on which the power FETs are attached, the heat radiation to minimize the device junction temperature should be taken into account, since it significantly affects the MTTF and RF performance. In any environment, the junction temperature should be lower than the absolute maximum rating during the device operation and it is recommended that the thermal design has enough margin. Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -9- P0120003P 800mW GaAs Power FET (Pb-Free Type) The junction temperature can be calculated by the following formula. Tjmax=(Vds*Ids-Pout)(Rth+Rboard+Rhs)+Ta Pout: Output power Rth: Thermal resistance between channel and case Rboard: Thermal resistance of PCB Rhs: Thermal resistance of heat sink Ta: Ambient temperature Tjmax: Maximum junction temperature Generally, there are two ways of heat radiation. One is the plated thru hole and the other is the heat sink. Key points will be illustrated in each case below. Note that no measure against oscillation is adopted in the figures. In the design of circuit and layout, you should take stabilizing into account if necessary. [Using Thru Hole] □Multiple plated thru holes are required directly below the device. □Place more than 2 machine screws as close to the ground pin (pin 4) as possible. The PCB is screwed on the mounting plate or the heat sink to lower the thermal resistance of the PCB. □Lay out a large ground pad area with multiple plated thru holes around pin 4 of the device. □The required matching and feedback circuit described in the application circuit examples should be connected to the device, although it is not shown in the figure below. Technical Note SUMITOMO ELECTRIC [Using Heat Sink] If you cannot get the junction temperature lower than the absolute maximum rating only with the plated thru holes, then you need to employ the heat sink. Attaching the heat sink directly under pin 4 of the device improves the thermal resistance between junction and ambient. φ 3 Plat ed T hru Hole 4-R0.3 Heat sink 1.9×2.85 (4-R0.3) 2 for 2.5 M achine Screw s φ 5 Soldermask Keep out φ 0.4 Plat ed T hru Holes 2.95 Grand P lane P acka ge O ut line G rand Plane 0.6 φ 3 Plat ed T hru Hole for 2.5 M achine Screws φ 5 Soldermask Keep out φ 3 Plat ed T hru Hole for 2.5 M achine Screws φ 5 Soldermask Keep out φ 0.3 Plat ed T hru Holes Packa ge Out line φ 0.4 Plat ed T hru Holes Grand Plane [Note] □Ground/thermal vias are critical for the proper device performance. Drills of the recommended diameters should be used in the fabrication of vias. □Add as much copper a s possible to inner and outer layers near the part to ensure optimal thermal performance. □Mounting screws can be added near the part to fasten the board to heat sink. Ensure that the ground/thermal via region contacts the heat sink. □Do not put solder mask on the backside of the PCB in the region where the board contacts the heat sink. □RF trace width depends upon the PCB material and construction. □Use 1 oz. Copper minimum. φ 5 Soldermask Keep out φ 3 Plat ed T hru Hole for 2.5 M achine Screws Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -10- P0120003P 800mW GaAs Power FET (Pb-Free Type) ♦Package Drawing 4.5 ± 0.1 1.6+0.15 -0.2 4.0 ± 0.25 2.5 ± 0.1 0.1 ± 0.05 Technical Note SUMITOMO ELECTRIC [Note] The reflow profile is different from the one for Sn-Pb plating. If you use a soldering iron to attach the devices, please beware of the followings. (1) The tip of the iron should be grounded. Or you should use an iron that is electrostatic discharge proof. (2) The temperature of the iron tip should be lower than 240 °C and the soldering should be completed within 10 seconds. φ 1.6 ± 0.3 1.1 ± 0.3 0.42 ± 0.06 0.47 ± 0.06 1 2 3 0.42 ± 0.06 0.4+0.03 -0.02 1.5 ± 0.1 ♦Attention to ESD Generally, GaAs devices are very sensitive to electrostatic discharge (ESD). To reduce the ESD damage, please pay attention to the followings. The devices should be stored with the electrodes short-circuited by conductive materials. The workstation and tools should be grounded for safe dissipation of the static charges in the environment. The workpeople are to wear anti-static clothing and wrist straps. For safety reasons, resistance of 10MΩ or so should exist between workpeople and ground. 1.5 ± 0.08 1.5 ± 0.08 ♦Laser Marking 1.65MAX B A: 0.67+ 0 -0.1 B: 0.45 A 1.3+0.1 -0 ♦Attention to Moisture The moisture sensitivity level (MSL) of P0120003P is 3, which means that the “floor life” is 168 hours below 30°C with relative humidity (Rh) of 60%. The devices are usually shipped in moisture-resistant alumina-laminated packages. After breaking the packages, they are to be stored under normal temperature and humidity (5-35°C, 45-75%), with no corrosive gases or dust in the environment. Assemble the devices within 168 hours after breaking the package, or you have to bake them at 85°C for 24 hours before assembling. 123 (0.65) **P 1,2,3: Lot No. * * P : P roduct Type ♦Convection Reflow Profile (Recommended) 300 260 ± 5°C 5sec ma x ♦Reliability and Environmental Issues The detailed reliability information can be seen in Reliability and Quality Assurance, which you can download from our web site. SEI’s Yokohama Works, where the devices are manufactured, has been accredited ISO-14001 since 1999. We control the toxic materials in our products in accordance with PRTR regulation. T emp erat ure (°C) 200 100 T ime above 230°C < 45 sec Preheat :160°C 90 sec ♦ Lead and Fluoride To realize Pb-free products, Sn-Bi is used for the lead frame plating. Any fluoride that has been determined by the Montreal agreement is not used in the products. 0 0 60 60 120 180 240 Time (sec) Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -11- P0120003P 800mW GaAs Power FET (Pb-Free Type) ♦Caution GaAs FET chips are used in P0120003P. For safety reasons, you should attend to the following matters: (1) Do not put the products in your mouse. (2) Do not make the products into gases or powders, by burning, breaking or chemical treatments. Technical Note SUMITOMO ELECTRIC (3) In case you abandon the products, you should obey the related laws and regulations. ♦Technical Inquiries are Welcome SEI welcomes technical questions from any customers. The e-mail is GaAsIC-ml@ml.sei.co.jp. You can also contact our regional offices as below. ♦Worldwide Contacts [Europe] Sumitomo Electric Europe Ltd. 220 Centennial Park, Centennial Avenue, Elstree, Herts. WD6 3SL U.K. Tel : +44-(0)20-8953-3369, Fax : +44-(0)20-8207-5950 URL : http://www.sumielectric.com [U.S.A.] Sumitomo Electric U.S.A., Inc. 3235 Kifer Road, Suite 150 Santa Clara, CA 95051-0815 USA Tel : +1-408-737-8517 Fax : +1-408-734-8881 [Asia/Pacific] Sumitomo Electric Industries, Ltd. Photo-Electron Device Division, Electron Devices Department 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa, 244-8588 Japan Tel: +81-(0)45-853-7263, Fax: +81-(0)45-853-1291 URL: http://www.sei.co.jp/GaAsIC/ E-mail: GaAsIC-ml@ml.sei.co.jp Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -12- P0120003P 800mW GaAs Power FET (Pb-Free Type) Technical Note SUMITOMO ELECTRIC ♦The information in this document is subject to change without notice. Please refer for the most up-to-date information before you start design using SEI’s devices. ♦Any part of this document may not be reproduced or copied. ♦SEI does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of SEI’s products described in this documents. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of SEI or others. ♦Descriptions of circuits and other related information in this document are for illustrative purpose in the examples of the device operation and application. SEI does not assume any responsibility for any losses incurred by customers or third parties arising from the use of the circuits and other related information in this document. ♦SEI’s semi-conductor device products are designed and manufactured for use in the standard communication equipment. Customers that wish to use these products in applications not intended by SEI must contact SEI’ sales representatives in advance. ♦Generally, it is impossible to eliminate completely the defects in semi-conductor products, while SEI has been continually improving the quality and reliability of the products. SEI does not assume any responsibility for any losses incurred by customers or third parties by or arising from the use of SEI’s semi-conductor products. Customers are to incorporate sufficient safety measures in the design such as redundancy, fire-containment and anti-failure features. Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/ -13-