EiceDRIVER™ Boost
Booster for Automotive Applications
1EBN1001AE
Single Channel Booster for Inverter Systems
Final Datasheet
Hardware Description
Rev. 3.0, 2015-04-30
ATV HP EDT
Edition 2015-04-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
EiceDRIVER™ Boost
1EBN1001AE
Revision History
Page or Item
Subjects (major changes since previous revision)
Rev. 3.0, 2015-04-30
Page 12
Updated Figure 2-2.
Page 13
Updated Table 3-1.
Page 15
Updated Figure 3-1.
Page 17
Updated Table 3-4.
Page 18
Updated Table 3-7 (parameter RPIN15).
Page 18
Updated Table 3-8 (parameter HFETOFF, VTOFFDP and VACLIDP).
Page 20
Updated Table 3-9 (parameter tACLI, tASC_ON, tASC_OFF).
Rev. 2.1, 2014-07-25
All
All sections updated
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™,
EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™,
PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™,
SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2011-02-24
Final Datasheet
Hardware Description
3
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
1.1
1.2
1.3
Product Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Feature Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
2.1
2.2
2.2.1
2.2.2
2.3
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
3.1
3.2
3.3
3.4
3.5
3.5.1
3.5.2
Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I/O Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Final Datasheet
Hardware Description
4
7
7
7
8
13
13
16
17
17
18
18
20
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
List of Figures
List of Figures
Figure 2-1
Figure 2-2
Figure 3-1
Figure 4-1
Figure 4-2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Recommended Footprint (all dimensions in mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Final Datasheet
Hardware Description
5
10
12
15
21
22
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
List of Tables
List of Tables
Table 2-1
Table 3-1
Table 3-2
Table 3-3
Table 3-4
Table 3-5
Table 3-6
Table 3-7
Table 3-8
Table 3-9
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Component Values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics for Pins: DACLP, ASC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics for Pins TONI, TOFFI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics for Pins: TONO, TOFFO, ACLI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Final Datasheet
Hardware Description
6
10
13
16
17
17
18
18
18
18
20
Rev. 3.0, 2015-04-30
1EBN1001AE
1
Product Definition
1.1
Overview
The 1EBN1001AE is an IGBT / MOSFET Gate Driver Booster designed
for automotive motor drives above 10kW.
The 1EBN1001AE is based on high performance bipolar technology and
aims at replacing buffer stages based on discrete devices. Because of its
thermally optimized exposed pad package, the 1EBN1001AE is able to
drive and sink peak currents up to 15 A. This makes this device suitable
for most inverter systems in automotive applications.
Next to the basic gate driving functions, the 1EBN1001AE also supports advanced functions such as active
clamping (with external diode) with fast reaction time. The active clamping function can also be inhibited via an
external signal.
Additional features are also implemented in order to ease the implementation of Active Short Circuit (ASC)
strategies and make the device suitable for safety related systems up to ASIL D (as per IEC 61508 and ISO
26262). The 1EBN1001AE can be used optimally with Infineon’s 2nd generation of Gate Driver IC such as the
1EDI200xAS “EiceSIL”.
1.2
Feature Overview
The following features are supported by the 1EBN1001AE:
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Single Channel IGBT / MOSFET Gate Driver Booster.
Suitable for IGBT classes up to 650 V / 800A and 1200 V / 400A.
Peak current up to IPK = +/- 15A (for 1.5μs).
Continuous current up to ICONT = 2 x 0.75 Arms at 10 kHz (CLOAD=300nF).
Low propagation delay and minimal PWM distortion.
Separate turn-on and turn-off signals pathes.
Support for Active Clamping with very fast reaction time.
Active Clamping Disable and ASC Input signals.
Support for negative turn-off bias.
Optimal support of EiceSIL functions.
14-pin PG-DSO-14 exposed pad green package.
Operational ambient temperature range from -40°C to 125°C.
Automotive qualified (as per AEC Q100).
Suitable for systems up to ASIL D requirements (as per IEC 61508 and ISO 26262).
Product Name
Ordering Code
Package
1EBN1001AE
SP001002438
PG-DSO-14
Final Datasheet
Hardware Description
7
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Product Definition
1.3
•
•
•
Target Applications
Inverters for automotive Hybrid Vehicles (HEV) and Electric Vehicles (EV).
High Voltage DC/DC converter.
Industrial Drive.
Final Datasheet
Hardware Description
8
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Functional Description
2
Functional Description
2.1
Introduction
The 1EBN1001AE is an advanced bipolar single channel IGBT gate driver booster that can also be used for driving
power MOS devices. The device has been developed in order to optimize the design of high performance safety
relevant automotive systems.
The turn-on and turn-off behavior of the IGBT is controlled via 2 pairs of pin: TONI and TOFFI which are connected
to the gate driver, and TONO and TOFFO connected to the gate resistances of the IGBT. The structure of the
output stage is basically that of an emitter-follower circuit, where the voltage at pin TONO (resp. TOFFO) follows
the voltage at pin TONI (resp. TOFFI). The 1EBN1001AE is capable of driving up to 400mm2 of IGBT area, with
a typical peak sink and source current capability of 15A.
The active clamping input ACLI allows an external active clamping circuit to turn on the IGBT in case of
overvoltage conditions detected on the IGBT. The active clamping function can be disabled in run time via pin
DACLP.
The input ASC aims at turning on the IGBT in case the system decides to set the motor in Active Short Circuit. An
active ASC signal overrules the inputs signals TONI and TOFFI.
During normal operation, the input of the device TONI and TOFFI are driven with input signals having same
polarity. Driving actively TONI and TOFFI with opposite voltages(e.g. TONI at 15V and TOFFI at -8V) may lead,
depending on the signal configuration, to irreversible damage to the device. It should be ensured at system level
that such case do not happen (e.g. by setting the gate driver in tristate mode).
The internal Short Circuit Protection (SCP) prevents in the device the generation of short circuits in case TONI
and/or TOFFI is floating.
Final Datasheet
Hardware Description
9
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Functional Description
2.2
Pin Configuration and Functionality
2.2.1
Pin Configuration
DACLP
14
2
TOFFI
ASC
13
3
TONI
ACLI
12
4
VEE2
VCC2
11
5
TOFFO
TONO
10
6
VEE2
VCC2
9
7
TOFFO
TONO
8
15
VEE2_EP
GND2
(exposed pad)
1
Figure 2-1 Pin Configuration
Table 2-1
Pin Configuration
Pin
Number
Symbol
I/O
Voltage
Class
Function
1
GND2
Ground
Ground
Ground
2
TOFFI
Input
15V
Turn-Off Input
3
TONI
Input
15V
Turn-On Input
4, 6
VEE2
Supply
Supply
Negative Power Supply
5, 7
TOFFO
Output
15V
Turn-Off Output
8, 10
TONO
Output
15V
Turn-On Output
9, 11
VCC2
Supply
Supply
Positive Power Supply
12
ACLI
Input
15V
Active Clamping Request Input
13
ASC
Input
5V
Active Short Circuit Input
14
DACLP
Input
5V
Active Clamping Disable Input
15
VEE2_EP
n/a
n/a
Thermal Pad, can be left open or connected to
VEE21).
1) This pad is aimed at thermal coupling. Supply current shall flow through pins 4 and 6.
Final Datasheet
Hardware Description
10
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Functional Description
2.2.2
Pin Functionality
VEE2, VEE2_EP
Negative power supply, referring to GND2.
VCC2
Positive power supply side, referring to GND2.
GND2
Reference ground.
TONI
Input pin for turning on the IGBT. An internal weak pull-down resistance ties this signal to VEE2 in case it is open.
TOFFI
Input pin for turning off the IGBT. An internal weak pull-down resistance ties this signal to VEE2 in case it is open.
ASC
Active short circuit input, used by the external circuit to turn on the booster. This signal is high active. An internal
weak pull-down resistance ties this signal to GND2 reference in case it is open. The ASC signal overrules the
commands at pins TONI and TOFFI.
DACLP
Input pin used to disable the active clamping function of the booster. This signal is high active. An internal weak
pull-up resistance ties this signal to an internal 5V reference in case it is open.
ACLI
Active clamping request input pin, used by the external active clamping circuit to turn on the booster.
TONO
Output pin for turning on the IGBT.
TOFFO
Output pin for turning off the IGBT.
Final Datasheet
Hardware Description
11
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Functional Description
2.3
Block Diagram
VCC2
VCC2
ACLI
TONI
TONO
SCP
Level
Shifter
TONO
TOFFO
TOFFI
TOFFO
5V
DACLP
ASC
Signal
Decoding
/
Level
Shifting
GND2
VEE2
VEE2
Figure 2-2 Block Diagram
Final Datasheet
Hardware Description
12
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Specification
3
Specification
3.1
Application Circuit
Table 3-1
Component Values
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Decoupling Capacitance
Cd
(Between VEE2 and GND2)
2 x 0.5
11
-
µF
10µF capacitance next to the
power supply source (e.g. flyback
converter). 1 µF close to the
device. It is strongly
recommended to have at least
two capacitances close to the
device (e.g. 2 x 500nF).
Decoupling Capacitance
Cd
(Between VCC2 and GND2)
-
11
-
µF
10µF capacitance next to the
power supply source (e.g. flyback
converter). 1 µF close to the
device.
Decoupling Capacitance
Cd
(Between VCC1 and GND1)
-
11
-
µF
10µF capacitance next to the
power supply source (e.g. flyback
converter). 1 µF close to the
device.
Series Resistance
Rs1
0
1
-
kΩ
Pull-up Resistance
Rpu1
-
10
-
kΩ
Filter Resistance
R1
-
1
-
kΩ
Filter Capacitance
C1
-
47
-
pF
Reference Resistance
Rref1
-
26.71)
-
kΩ
high accuracy, as close as
possible to the device
Reference Capacitance
Cref1
-
100
-
pF
As close as possible to the device.
Pull-up Resistance
Rpu2
-
10
-
kΩ
Reference Resistance
Rref2
-
23.7
-
kΩ
high accuracy, as close as
possible to the device
Reference Capacitance
Cref2
-
100
-
pF
As close as possible to the device.
DESAT filter Resistance
Rdesat
1
3
kΩ
Depends on required response
time.
DESAT filter Capacitance
Cdesat
n/a
nF
Depends on required response
time.
DESAT Diode
Ddesat
-
n/a
-
-
HV diode, type tbd
OSD Filter Resistance
Rosd
-
1
-
kΩ
OSD Filter Capacitance
Cosd
-
47
-
pF
Sense Resistance
Rsense
-
n/a
-
Ω
Final Datasheet
Hardware Description
13
Depends on IGBT specification.
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Specification
Table 3-1
Component Values (cont’d)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
OCP filter Resistance
Rocp
-
n/a
-
Ω
Depends on required response
time.
OCP filter Capacitance
Cocp
-
n/a
-
nF
Depends on required response
time.
OCPG Resistance
Rocpg
0
-
100
nF
Depends on required response
time.
DACLP filter Resistance
Rdaclp
-
1
-
kΩ
DACLP filter Capacitance
Cdaclp
-
470
-
pF
NUV2 Filter Resistance
R2
-
n/a
-
Ω
NUV2 Filter Capacitance
C2
-
-
100
pF
Active Clamping Resistance Racl1
-
n/a
-
Ω
Depends on application
requirements
Active Clamping Resistance Racl2
-
n/a
-
kΩ
Depends on application
requirements
Active Clamping
Capacitance
Cacli
-
n/a
-
nF
Depends on application
requirements
TVS Diode
Dtvsacl1,
Dtvsacl2
-
n/a
-
-
Depends on application
requirements
Active Clamping Diode
Dacl
-
n/a
-
-
Depends on application
requirements
ACLI Clamping Diode
Dacl2
-
n/a
-
-
Depends on application
requirements
VREG Capacitance
Cvreg
µF
As close as possible to the device.
Gate Resistance
Rgon
0.5
-
-
Ω
Gate Resistance
Rgoff
0.5
-
-
Ω
Gate Clamping Diode
Dgcl1
-
n/a
-
-
2)
Gate Clamping Diode
Dgcl2
-
n/a
-
-
E.g. Schottky Diode type tbd. 2)
Gate Series Resistance
Rgate
0
10
-
Ω
Optional component
VEE2 Clamping Diode
Dgcl3
-
n/a
-
-
E.g. Schottky Diode type tbd. 2)
1
Depends on required response
time.
1) 26.1 kOhm can also be used
2) Need of this components is application specific.
Final Datasheet
Hardware Description
14
Rev. 3.0, 2015-04-30
LV Logic
Rpu1
15
GND1
R1
R1
RS1
R1
R1
R1
R1
R1
Rpu1
Cref1
Cd
GN D1
GN D1
GN D1
GN D1
C1
C1
C1
C1
C1
C1
C1
VCC1
REF0
REF0
Rpu1
Final Datasheet
Hardware Description
Rref1
+5V
Rref2
GND1
IREF1
NCS
VEE2
VREG
GND2
OCPG
OCP
GATE
NUV2
OSD
IREF2
DACLP
EiceDRIVER
SIL
SCLK
SDO
SDI
NRST/RDY
REF0
EN
Cd
Cosd
‐8V
GND2
Rosd
GND2
Cref2
Cvreg
Cocp
0 Vector
Generation
RDACLP
GND2
Rocp
Rse nse
Rocpg
R2
Rpu2
GND2
C2
Dg cl3 (*)
Lse nse(*)
C2DACLP
VCC2
VCC2
ASC
Rg ate(*)
VEE2
VEE2
Cd
GND2
Cd
TOFFO
TONO
ACLI
GND2
EiceDRIVER
Boost
GND2
DACLP
TOFFI
TOFF
GND2
INSTP
GND2
Rdes at
TONI
DEBUG
NFLTB
Cdes at
+15V
TON
DESAT
NFLTA
Cd
INP
VCC2
VCC1
VEE2
Da cl2
Ca cli
VCC2
VEE2
Dg cl2 (*)
Dg cl1 (*)
Rg off
Rg on
Dtvsa cl1
Ra cl2(*)
VEE2
VCC2
Ra cl1
Da cl
Dtvsa cl2(*)
Ddes at
EiceDRIVER™ Boost
1EBN1001AE
Specification
Figure 3-1 Application example
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Specification
3.2
Absolute Maximum Ratings
Stress above the maximum values listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Table 3-2
Absolute Maximum Ratings1)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Junction temperature
TJUNC
-40
-
150
°C
Storage temperature
TSTO
-55
-
150
°C
Positive power supply
VCC2
-0.3
-
28
V
Referenced to GND2
Negative power supply
VEE2
-13
-
0.3
V
Referenced to GND2
Power supply voltage difference VDS2
(secondary) VCC2-VEE2
-
-
40
V
Voltage on class 5V pins
VIN5
-0.3
-
6.5
V
Referenced to GND2
Voltage on class 15V pins.
VIN15
VEE2-0.3
-
VCC2+0.3
V
Referenced to GND2
Input current on class 5V pins
IIN5
-
-
1.0
mA
Input/Output Current on pin
TONI, TOFFI
ITI15
-200
-
200
mA
DC current
-2.0
-
2.0
A
Peak current for 1.5µs
Input/Output Current on pin
TONO, TOFFO
ITO15
-200
-
200
mA
DC current
-15.0
-
15.0
A
Peak current for 1.5µs
Input Current on pin ACLI
IACLIN
-
-
10.0
mA
Peak Current for 1.5 µs
Cross current between TONI and ICCI
TOFFI
-
-
300
mA
Peak Current for 6 µs
ESD Immunity
-
-
2
kV
HBM2)
-
-
500
V
CDM3)
n.a.
3
n.a.
MSL Level
VESD
MSL
1) Not subject to production test. Absolute maximum Ratings are verified by design / characterization.
2) According to EIA/JESD22-A114-B.
3) According to JESD22-C101-C.
Final Datasheet
Hardware Description
16
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Specification
3.3
Operating range
The following operating conditions must not be exceeded in order to ensure correct operation of the 1EBN1001AE.
All parameters specified in the following sections refer to these operating conditions, unless otherwise noticed.
Table 3-3
Operating Conditions
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note / Test Condition
Ambient temperature
TAMB
-40
-
125
°C
Junction temperature
TJUNC
-40
-
150
°C
Positive power supply (secondary)
VCC2
13.0
15.0
18.0
V
Negative power supply
VEE2
-10.0
-8.0
-5.0
V
Referenced to GND2
kHz
1)
PWM switching frequency
fsw
-
-
30
Referenced to GND2
1) Maximum junction temperature of the device must no be exceeded.
3.4
Thermal Characteristics
The indicated parameters apply to the full operating range, unless otherwise specified.
Table 3-4
Thermal characteristics
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
-
25
-
K/W
Tamb=25°C1)
Thermal Resistance Junction to Case RTHJCB
bottom
-
-
0.8
K/W
Tamb=25°C1)
Thermal Resistance Junction to Case RTHJCT
top
-
-
40
K/W
Tamb=25°C1)
Thermal Resistance Junction to
Ambient
RTHJA
1) Not subject to production test. This parameter is verified by design / characterization.
Final Datasheet
Hardware Description
17
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Specification
3.5
Electrical Characteristics
The indicated electrical parameters apply to the full operating range, unless otherwise specified.
3.5.1
I/O Electrical Characteristics
Table 3-5
Power Supply Current
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
VCC2 bias current
ICC2
-
1.6
3.1
mA
Tamb=25°C,Vcc2=20V,
VEE2=-10V, all pins open
VEE2 bias current
IEE2
-
1.3
2.8
mA
Tamb=25°C,Vcc2=20V,
VEE2=-10, all pins open
VCC2 steady state current with ASC
active
ICC2_ASC
-
12.6
22
mA
Tamb=25°C,Vcc2=20V,
VEE2=-10V, VASC=5V, all
other pins open
VEE2 steady state current with ASC
active t
IEE2_ASC
-
6.3
11
mA
Tamb=25°C,Vcc2=20V,
VEE2=-10V, VASC=5V, all
other pins open
Table 3-6
Electrical Characteristics for Pins: DACLP, ASC
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Low Input Voltage
VIN5L
0
-
1.5
V
Referenced to GND2
High Input Voltage
VIN5H
3.5
-
5.5
V
Referenced to GND2
Input Voltage Hysteresis
VIN5HYST 0.4
0.9
-
V
Input pull-up / pull-down resistance
(5V pin)
RPIN5
52
81
kΩ
Table 3-7
30
Electrical Characteristics for Pins TONI, TOFFI
Parameter
Symbol
Input pull-up / pull-down resistance
(15V pin)
RPIN15
Values
Unit Note / Test Condition
Min.
Typ.
Max.
30
50
90
Table 3-8
Electrical Characteristics for Pins: TONO, TOFFO, ACLI
Parameter
Symbol
Values
Typ.
Max.
TONO static forward current transfer HFETON
ratio
10
40
70
TONO transistor static ON-state
voltage drop
0.3
0.7
1.0
Final Datasheet
Hardware Description
18
Tamb=25°C
Unit Note / Test Condition
Min.
VTONDP
kΩ
VTONI= VCC2,
ITONO=100mA
V
VTONI= VCC2=15V,
ITONO=10mA
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Specification
Table 3-8
Electrical Characteristics for Pins: TONO, TOFFO, ACLI (cont’d)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
TOFFO static forward current transfer HFETOFF
ratio
7
15
30
TOFFO transistor static ON-state
voltage drop
VTOFFDP
0.2
0.7
1.0
V
VTOFFI= VEE2=-8V,
VCC2=15V, ITOFFO=10mA
Peak source current at TONO
ION15PK2
-
-
15
A
Duration 1.5μs,
CLast=300nF,
Tamb=125°C, 1)
Peak sink current at TOFFO
IOF15PK2
-15
-
A
Duration 1.5μs,
CLast=300nF,
Tamb=125°C, 1)
Effective RMS source current at
TONO
ION15EF2
-
-
A
CLast=300nF,
Tamb=125°C, fsw=10kHz,
0.75
VTOFFI= VEE2,
ITOFFO=100mA
1)
EffectiveRMS sink current at TOFFO IOF15EF2
-0.75
-
-
A
CLast=300nF,
Tamb=125°C, fsw=10kHz,
1)
ACLI transistor static ON-state
voltage drop (to TONO)
VACLIDP
1.2
2.3
3.0
V
VACLI= VCC2=15V,
ITONO=10mA
1) Verified by design / characterization, not subject to production test.
Final Datasheet
Hardware Description
19
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Specification
3.5.2
Switching Characteristics
Table 3-9
Switching Characteristics
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Input to Output Propagation Delay
ON
tPDON
-
10
-
ns
VCC2=15V, VEE2=0V,
Tamb=25°C,dVin=5V
step, RLOAD=150Ohm
Input to Output Propagation Delay
OFF
tPDOFF
-
10
-
ns
VCC2=15V, VEE2=0V,
Tamb=25°C, dVin=5V
step, RLOAD=100Ohm
Input to Output Propagation Delay
Distortion
tPDDISTO
-10
-
10
ns
VCC2=15V, VEE2=-8V,
Tamb=25°C 1)
Turn-Off time
tTOOFF
-
-
70
ns
VCC2=15V, VEE2=-8V,
CLOAD = 300 nF, dVout =
1V, Tamb=25°C1)
Rise Time
tRISE
-
50
-
ns
VCC2=15V, VEE2=-8V,
CLOAD =10 nF, 10%-90%
transition, Tamb=25°C1)
Fall Time
tFALL
-
90
-
ns
VCC2=15V, VEE2=-8V,
CLOAD = 10 nF, 90%-10%
transition, Tamb=25°C, 1)
Active clamping reaction time
tACLI
-
40
90
ns
VCC2=15V, VEE2=0V,
dVout=1V,
RLOAD=150Ohm
ASC turn-on reaction time
tASC_ON
-
80
200
ns
VCC2=10V, VEE2=0V,
dVout=1V,
RLOAD=150Ohm
ASC turn-off reaction time
tASC_OFF
-
500
1300
ns
VCC2=10V, VEE2=0V,
dVout=1V,
RLOAD=150Ohm
1) Verified by design / characterization. Not subject to production test.
Final Datasheet
Hardware Description
20
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Package Information
4
Package Information
Figure 4-1 Package Outlines
The typical footprint shown Figure 4-2 can be used:
Final Datasheet
Hardware Description
21
Rev. 3.0, 2015-04-30
EiceDRIVER™ Boost
1EBN1001AE
Package Information
Figure 4-2 Recommended Footprint (all dimensions in mm)
Note: Depending on the application requirements, some thermally optimized footprint might be needed on PCB.
Final Datasheet
Hardware Description
22
Rev. 3.0, 2015-04-30
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
