1ED3125MU12FXUMA1

1ED312xMU12F (1ED-X3 Compact) EiceDRIVER™ 1ED312xMU12F Compact Datasheet Single-channel 3.0 kV (rms) isolated gate driver IC with active Miller clamp or separate output Feature list • • • • • • • • • • Single channel isolated gate driver For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs Up to 14.0 A typical peak output current 40 V absolute maximum output supply voltage High common-mode transient immunity CMTI > 200 kV/µs Separate source and sink outputs or active Miller clamp with active shutdown and short circuit clamping Galvanically isolated coreless transformer gate driver 3.3 V and 5 V input supply voltage Suitable for operation at high ambient temperature and in fast switching applications UL 1577 certification VISO = 3.0 kV (rms) for 1 min (File E311313) Potential applications • • • • • • • AC and brushless DC motor drives High voltage DC-DC converter and DC-AC inverter Induction heating resonant application UPS-systems Commercial air-conditioning (CAC) Server and telecom switched mode power supplies (SMPS) Solar inverters, e.g. for 1500 V (DC) systems PG-DSO-8 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Device information Product type Typical output current and configuration UVLO (VUVLOL2,min) Certification (File E311313) Package marking 1ED3124MU12F 14.0 A separate source and sink 10.5 V UL 3124MU12 1ED3125MU12F 10.0 A and 3.0 A clamp 10.5 V UL 3125MU12 1ED3127MU12F 10.0 A and 3.0 A clamp 12.0 V UL 3127MU12 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document www.infineon.com/gdisolated 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet Description Description The 1ED312xMU12F (1ED-X3 Compact) gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in PG-DSO-8 package. They provide a typical output current of up to 14.0 A on separate source and sink pins or a typical output current of 10.0 A with an additional 3.0 A active Miller clamp. The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to support 3.3 V microcontrollers. Data transfer across the isolation barrier is realized by the coreless transformer technology. All variants have logic input and driver output undervoltage lockout (UVLO), and active shutdown. The gate drivers are certified according to UL 1577 VCC1 VCC2,H OUT+ IN+ IN- EiceDRIVERTM Single channel with separate output OUT- GND1 VEE2,H VCC1 VCC2,L Control OUT+ IN+ IN- EiceDRIVERTM Single channel with separate output OUT- GND1 Figure 1 Datasheet VEE2,L Typical application using separate output variant 2 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet Table of contents Table of contents Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1 Block diagram reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2 Related products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Pin configuration and description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 4.2 4.2.1 4.2.2 4.2.3 4.2.4 4.3 4.4 Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Undervoltage lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Active shut-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Short circuit clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Active Miller clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Non-inverting and inverting inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Driver outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 Electrical characteristics and parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Operating parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Gate driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Active shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 6.1 Insulation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Recognized under UL 1577 (File E311313) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 7 Package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Datasheet 3 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 1 Block diagram reference 1 Block diagram reference UVLO VCC1 UVLO VCC2 VCC2 input filter IN+ GND1 & active filter & TX RX *1 Shoot through protection input filter IN- OUT+ OUT- *1) pull-up resistor ensures high-level detection with unconnected pin GND1 Figure 2 VEE2 Block diagram separate source and sink output variants UVLO VCC1 UVLO VCC2 & OUT input filter IN+ GND1 & active filter TX RX VEE2 *1 IN- VCC2 input filter 2V CLAMP & *1) pull-up resistor ensures high-level detection with unconnected pin GND1 Figure 3 Datasheet VEE2 Block diagram output with CLAMP variants 4 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 2 Related products 2 Related products Note: Please consider the gate driver IC power dissipation and insulation requirements for the selected power switch and operating condition. Product group Product name Description TRENCHSTOP™ IGBT Discrete IKQ75N120CS6 High Speed 1200 V, 75 A IGBT with anti-parallel diode in TO247-3 IKW15N120BH6 High Speed 1200 V, 15 A IGBT with anti-parallel diode in TO247 IHW40N120R5 Reverse conducting 1200 V, 40 A IH IGBT with integrated diode in TO247 CoolSiC™ SiC IMBF170R650M1 MOSFET Discrete IMBG120R045M1H ™ CoolSiC SiC MOSFET Module TRENCHSTOP™ IGBT Modules Table 1 1700 V, 650 mΩ SiC MOSFET in TO263-7 package 1200 V, 45 mΩ SiC MOSFET in TO263-7 package IMZ120R350M1H 1200 V, 350 mΩ SiC MOSFET in TO247-4 package FS45MR12W1M1_B11 EasyPACK™ 1B 1200 V / 45 mΩ sixpack module FF23MR12W1M1_B11 EasyDUAL™ 1B 1200 V, 23 mΩ half-bridge module FF6MR12W2M1_B11 EasyDUAL™ 2B 1200 V, 6 mΩ half-bridge module F3L11MR12W2M1_B74 EasyPACK™ 2B 1200 V, 11 mΩ 3-Level module in Advanced NPC (ANPC) topology F4-23MR12W1M1_B11 EasyPACK™ 1B 1200 V, 23 mΩ fourpack module F4-100R17N3E4 EconoPACK™ 3 1700 V, 100 A fourpack IGBT module F4-200R17N3E4 EconoPACK™ 3 1700 V, 200 A fourpack IGBT module FS150R17N3E4 EconoPACK™ 3 1700 V, 150 A sixpack IGBT module FF650R17IE4 PrimePACK™ 3 1700 V, 650 A half-bridge dual IGBT module FF1000R17IE4 PrimePACK™ 3 1700 V, 1000 A half-bridge dual IGBT module FF1200R17IP5 PrimePACK™ 3+ 1700 V, 1200 A dual IGBT module FF1500R17IP5 PrimePACK™ 3+ 1700 V, 1500 A dual IGBT module FF1500R17IP5R PrimePACK™ 3 1700 V, 1500 A dual IGBT module FF1800R17IP5 PrimePACK™ 3+ 1700 V, 1800 A dual IGBT module FP10R12W1T7_B11 EasyPIM™ 1B 1200 V, 10 A three phase input rectifier PIM IGBT module FS100R12W2T7_B11 EasyPACK™ 2B 1200 V, 100 A sixpack IGBT module FP150R12KT4_B11 EconoPIM™ 3 1200V three-phase PIM IGBT module FS200R12KT4R_B11 EconoPACK™ 3 1200 V, 200 A sixpack IGBT module Evaluation boards Part number Description EVAL-1ED3121MX12H Half-bridge evaluation board for 1ED3121MU12H EVAL-1ED3122MX12H Half-bridge evaluation board for 1ED3122MU12H EVAL-1ED3124MX12H Half-bridge evaluation board for 1ED3124MU12H Datasheet 5 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 3 Pin configuration and description 3 Pin configuration and description Pin configuration PG-DSO-8 of 1ED3124MU12F Table 2 Pin configuration Pin No. Name Function 1 VCC1 Positive logic supply 2 IN+ Non-inverted driver input (active high) 3 IN- Inverted driver input (active low) 4 GND1 Logic ground 5 VCC2 Positive power supply output side 6 OUT+ Driver source output 7 OUT- Driver sink output 8 VEE2 Power ground Figure 4 1 VCC1 VEE2 8 2 IN+ OUT- 7 3 IN- OUT+ 6 4 GND1 VCC2 5 PG-DSO-8 (top view) Pin configuration PG-DSO-8 of 1ED3125MU12F, 1ED3127MU12F Table 3 Pin configuration Pin No. Name Function 1 VCC1 Positive logic supply 2 IN+ Non-inverted driver input (active high) 3 IN- Inverted driver input (active low) 4 GND1 Logic ground 5 VCC2 Positive power supply output side 6 OUT Driver source and sink output 7 CLAMP Active Miller clamp output 8 VEE2 Power ground Datasheet 6 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 3 Pin configuration and description Figure 5 1 VCC1 VEE2 8 2 IN+ CLAMP 7 3 IN- OUT 6 4 GND1 VCC2 5 PG-DSO-8 (top view) Pin description • • • • • • • • • • VCC1: Logic input supply voltage of 3.3 V up to 15 V wide operating range GND1: Ground connection of input circuit. IN+: Non-inverted control signal for driver output. An internal filter provides robustness against noise at IN+. An internal weak pull-down resistor favors off-state. IN-: Inverted control signal for driver output. An internal filter provides robustness against noise at IN-. An internal weak pull-up resistor favors off-state. VCC2: Positive power supply pin of output driving circuit. A proper blocking capacitor has to be placed close to this supply pin. VEE2: Reference ground of the output driving circuit. In case of a bipolar supply (positive and negative voltage referred to IGBT emitter) this pin is connected to the negative supply voltage. OUT+: Driver source output pin to turn on external IGBT. During on-state the driving output is switched to VCC2. Switching of this output is controlled by IN+ and IN-. This output will also be turned off at an UVLO event. OUT-: Driver sink output pin to turn off external IGBT. During off-state the driving output is switched to VEE2. Switching of this output is controlled by IN+ and IN-. In case of UVLO an active shut down keeps the output voltage at a low level. OUT: Combined source and sink output pin to external IGBT. The output voltage will be switched between VCC2 and VEE2. Switching of this output is controlled by IN+ and IN-. In case of an UVLO event this output will be switched off and an active shut down keeps the output voltage at a low level. CLAMP: The clamp function ties its output to VEE2 during off-state. It activates as soon as the gate voltage has dropped below 2.0 V referred to VEE2 after a turn-off command. Connect this pin directly to the IGBT gate to avoid parasitic turn-on of the connected IGBT. Datasheet 7 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 4 Functional description 4 Functional description The 1ED312xMU12F (1ED-X3 Compact) are general purpose IGBT gate drivers. Basic control and protection features support fast and easy design of highly reliable systems. The integrated galvanic isolation between control input logic and driving output stage grants additional safety. Its input voltage supply range supports the direct connection of various signal sources like DSPs and microcontrollers. 4.1 Supply The driver can operate over a wide supply voltage range, either unipolar or bipolar. 10R +3.3 V VCC1 OUT+ 100n 3R3 OUT- SGND GND1 IN VCC2 IN+ IN- Figure 6 VEE2 +15 V 4µ7 4µ7 0V -8 V Application example bipolar supply With bipolar supply the driver is typically operated with a positive voltage of 15 V at VCC2 and a negative voltage of -8 V at VEE2 relative to the emitter of the IGBT. Negative supply can help to prevent a dynamic turn on due to the additional charge which is generated from IGBT’s input capacitance. +3.3 V 10R VCC1 OUT 100n SGND IN Figure 7 CLAMP GND1 IN+ VCC2 IN- VEE2 +15 V 4µ7 Application example unipolar supply For unipolar supply configuration the driver is typically supplied with a positive voltage of 15 V at VCC2. In this case, careful evaluation for turn off gate resistor selection is recommended to avoid dynamic turn on. Both supply options are usable with either output configuration separate source and sink as well as output with active Miller clamp. Datasheet 8 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 4 Functional description 4.2 Protection features 4.2.1 Undervoltage lockout (UVLO) IN+ VUVLOH1 VUVLOL1 VCC1 VUVLOH2 VUVLOL2 VCC2 OUT Figure 8 UVLO behavior To ensure correct switching of IGBTs the device is equipped with an undervoltage lockout for input and output independently. Operation starts only after both VCC levels have increased beyond the respective VUVLOH levels. If the power supply voltage VVCC1 of the input chip drops below VUVLOL1 a turn-off signal is sent to the output chip before power-down. The IGBT is switched off and the signals at IN+ and IN- are ignored until VVCC1 reaches the power-up voltage VUVLOH1 again. If the power supply voltage VVCC2 of the output chip goes down below VUVLOL2 the IGBT is switched off and signals from the input chip are ignored until VVCC2 reaches the power-up voltage VUVLOH2 again. Note: 4.2.2 VVCC2 is always referred to VEE2 and does not differentiate between unipolar or bipolar supply. Active shut-down The active shut-down feature ensures a safe IGBT off-state in case the output chip is not connected to the power supply or an undervoltage lockout is in effect. The IGBT gate is clamped at OUT- or CLAMP to VEE2. 4.2.3 Short circuit clamping During short circuit the IGBTs gate voltage tends to rise because of the feedback via the Miller capacitance. An internal protection circuit at OUT+ or CLAMP limits this voltage to a value slightly higher than the supply voltage. A maximum current of 500 mA may be fed back to the supply through this path for 10 μs. If higher currents are expected or tighter clamping is desired external Schottky diodes may be added. 4.2.4 Active Miller clamp In a half bridge configuration the switched off IGBT tends to dynamically turn on during turn on phase of the opposite IGBT. A Miller clamp allows sinking the Miller current across a low impedance path in this high dV/dt situation. Therefore in many applications, the use of a negative supply voltage can be avoided. During turn-off, the gate voltage is monitored and the clamp output is activated when the gate voltage drops below typical 2 V (referred to VEE2). The clamp is designed for a Miller current in the same range as the nominal output current. Datasheet 9 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 4 Functional description 4.3 Non-inverting and inverting inputs IN+ IN- OUT Figure 9 Logic input to output switching behavior There are two possible input modes to control the IGBT. At non-inverting mode IN+ controls the driver output while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input pulse width is defined to filter occasional glitches. 4.4 Driver outputs The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to the low internal voltage drop, switching behavior of the IGBT is predominantly governed by the gate resistor. Furthermore, it reduces the power to be dissipated by the driver. Datasheet 10 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 5 Electrical characteristics and parameters 5 Electrical characteristics and parameters 5.1 Absolute maximum ratings Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND1. Table 4 Absolute maximum ratings Parameter Symbol Values Min. Unit Note or test condition Max. Input to output offset voltage VOFFSET – 2300 V VVEE2,max-VVEE2,min with VVEE2,max ≥ VGND1 ≥ VVEE2,min1) 2) Power supply output side VVCC2 -0.3 40 V 3) Gate driver output (OUT+, OUT-, OUT, CLAMP) VOUT VEE2 - 0.3 VCC2 + 0.3 V 3) Power supply input side VVCC1 -0.3 17 V VCC1 - GND1 Logic input voltages (IN+, IN-) VIN -0.3 6.5 V IN - GND1 Junction temperature TJ -40 150 °C – Storage temperature TStg -55 150 °C – Power dissipation (input side) PD,IN – 100 mW TA = 65°C4) Power dissipation (output side) PD,OUT – 500 mW TA = 65°C5) Thermal resistance junction to ambient RthJA,OUT ΨJtop – 151 K/W – 3.3 K/W TA = 85°C 150 mil, 1s0p, PJ = 500 mW VESD,HBM – 4 kV Human body model6) ESD,CDM – TC 1000 – Charged device model7) Characterization parameter junction to package top input side ESD robustness 1) 2) 3) 4) 5) 6) 7) for functional operation only See also Chapter 6 on page 16 With respect to VEE2 IC input-side power dissipation is derated linearly with 6.6 mW/°C above 135 °C IC output-side power dissipation is derated linearly with 6.6 mW/°C above 74 °C According to ANSI/ESDA/JEDEC-JS-001-2017 (discharging a 100 pF capacitor through a 1.5 kΩ series resistor). According to ANSI/ESDA/JEDEC-JS-002-2014 (TC = test condition in volt) Figure 10 Reference layout for thermal data (Copper thickness 35 μm) This PCB layout represents the reference layout used for the thermal characterization of the 150 mil package. Datasheet 11 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 5 Electrical characteristics and parameters 5.2 Operating parameters Within the operating range the IC operates as described in the functional description. Unless otherwise noted all parameters refer to GND1. Table 5 Electrical characteristics Parameter Symbol Values Min. Unit Note or test condition Max. Power supply output side VVCC2 10 35 V 1) Power supply input side VVCC1 3.1 15 V – Logic input voltages (IN+, IN-) VIN -0.3 5.5 V – Switching frequency fSW – 1 MHz max PD applies Ambient temperature TA -40 125 °C – Common mode transient immunity (CMTI) CMTI -200 200 kV/µs VOFFSET,test = 1500 V 1) With respect to VEE2 Datasheet 12 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 5 Electrical characteristics and parameters 5.3 Electrical characteristics Note: The electrical characteristics include the spread of values in supply voltages, load and junction temperatures given below. Typical values represent the median values at TA = 25°C. Unless otherwise noted all voltages are given with respect to their respective GND (GND1 for pins 1 to 3 and VEE2 for pins 5 to 7). 5.3.1 Power supply Table 6 Power supply Parameter Symbol Values Min. Typ. Unit Note or test condition Max. UVLO threshold input side (on) VUVLOH1 – – 3.1 V – UVLO threshold input side (off) VUVLOL1 2.5 – – V – UVLO hysteresis input side VHYS1 0.1 0.2 – V – UVLO threshold output side (on) VUVLOH2,1 – – 12.5 V UVLO threshold output side (off) VUVLOL2,1 10.5 – – V 1ED3124MU12F, 1ED3125MU12F UVLO threshold output side (on) VUVLOH2,2 – – 14.2 V UVLO threshold output side (off) VUVLOL2,2 12.0 – – V UVLO hysteresis output side VHYS2 0.8 – – V – Quiescent current input side IQ1 – – 1.1 mA static, output low Quiescent current output side IQ2 – – 2 mA Start up time tSTART – 2.5 20 µs 1) UVLO detection filter time tUVLOflt 50 – – ns 1) Unit Note or test condition 1) 1ED3127MU12F Parameter is not subject to production test - verified by design/characterization 5.3.2 Logic input Table 7 Logic input Parameter Symbol Values Min. Typ. Max. IN+, IN- logic low input voltage VIN,L – – 1.1 V – IN+, IN- logic high input voltage VIN,H 2.5 – – V – IN+, IN- low/high hysteresis VIN,HYS 0.5 0.8 – V – IN+, IN- input current IIN – – 100 µA VVCC1 = 5 V; VIN ≤ VVCC1 IN+ pull down resistor RIN,PD – 75 – kΩ to GND1 IN- pull up resistor RIN,PU – 75 – kΩ ensures high-level detection with unconnected pin Datasheet 13 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 5 Electrical characteristics and parameters 5.3.3 Gate driver All gate driver output parameters valid for VCC2 = 15 V supply voltage unless specified otherwise. Table 8 Gate driver Parameter Symbol Values Min. Typ. Unit Note or test condition 1) VCC2-OUT = 15 V, Max. 1ED3125MU12F, 1ED3127MU12F High level output peak current IOUT,H 4.0 10.0 – A High level output on resistance RDSON,H 0.26 0.50 0.85 Ω IOUT,H = 0.1 A Low level output peak current IOUT,L 4.0 9.0 – A 1) OUT-VEE2 = 15 V, Low level output on resistance RDSON,L 0.23 0.38 0.65 Ω IOUT,L = 0.1 A Low level clamp peak current ICLAMP,L 2.0 3.0 – A 1) V Low level clamp on resistance RDSON,CLP 0.26 0.45 0.75 Ω IOUT,L = 0.1 A CLAMP threshold voltage VCLAMP 1.6 2.0 2.4 V CLAMP-VEE2 CLAMP comparator to CLAMP activation delay time tCLPDLY – – 80 ns 1) V High level output peak current IOUT,H 6.0 13.5 – A 1) VCC2-OUT+ = 15 V, High level output on resistance RDSON,H 0.26 0.38 0.65 Ω IOUT,H = 0.1 A Low level output peak current IOUT,L 6.0 14.0 – A 1) OUT--VEE2 = 15 V, Low level output on resistance RDSON,L 0.21 0.28 0.6 Ω IOUT,L = 0.1 A all variants ΔVOUT,H – – 0.3 V VCC2-VOUT,H; IOUT = 20 mA – – 0.1 V VCC2-VOUT,H; IOUT = 20 mA VCLP – – 2.0 V Output on, IOUT = 500 mA, t < 10 µs Output on Output off CLAMP = 2.0 V CLAMP ≤ 2.0 V 1ED3124MU12F High level output voltage Low level output voltage Short circuit clamp voltage between OUT+/CLAMP and VCC2 1) ΔVOUT,L Output on Output off Parameter is not subject to production test - verified by design/characterization 5.3.4 Dynamic characteristics Dynamic characteristics are measured with VVCC1 = 5 V and VVCC2 = 15 V. VIN,H IN+ VIN,L 80% 90% OUT 10% 20% tPDON Figure 11 Datasheet tPDOFF tRISE tFALL Propagation delay, rise and fall time 14 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 5 Electrical characteristics and parameters Table 9 Filter and propagation delay characteristics (all other variants) Parameter Symbol Values Min. Typ. Unit Note or test condition Max. Input to output propagation delay ON tPDON 80 90 100 ns CLOAD = 100 pF, IN turn-on threshold to 10% output on Input to output propagation delay OFF tPDOFF 80 90 100 ns CLOAD = 100 pF, IN turn-off threshold to 90% output off Input to output propagation delay distortion tPDISTO -5 0 5 ns tPDOFF - tPDON Input pulse suppression time (filter time) tINFLT 30 – – ns shorter pulses will not propagate to the output Minimum input pulse length tMININ – – 40 ns – Input to output propagation delay variation due to temperature tPD,T – – 14 ns 1) Input to output propagation delay distortion variation due to temperature tPDISTO,T – – 3 ns 1) Input to output, part to part propagation delay ON variation |tPDon,P2P| – – 7 ns 1) 2) C Unit Note or test condition 1) 2) LOAD = 100 pF Parameter is not subject to production test - verified by design/characterization Absolute value at same ambient and operating conditions. Table 10 Dynamic output characteristics Parameter Symbol Values Min. Typ. Max. Rise time tRISE – – 15 ns CLOAD = 100 pF Fall time tFALL – – 15 ns CLOAD = 100 pF Rise time tRISE – – 30 ns CLOAD = 1 nF Fall time tFALL – – 30 ns CLOAD = 1 nF Unit Note or test condition 5.3.5 Active shut down Table 11 Active shut down Parameter Symbol Values Min. Typ. Max. Active shut down voltage, cold VACTSD,C – – 1.9 V IOUT = 10 mA; VCC2 unsupplied; TA < 20°C Active shut down voltage, hot VACTSD,H – – 1.7 V 1) I 1) OUT- = 10 mA; VCC2 unsupplied; TA ≥ 20°C Parameter is not subject to production test - verified by design/characterization Datasheet 15 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 6 Insulation characteristics 6 Insulation characteristics Table 12 Safety limiting values This coupler is suitable for rated insulation only within the given safety limiting values. Compliance with the safety limiting values shall be ensured by means of suitable protective circuits. Description Symbol Characteristic Unit Maximum ambient safety temperature TS 150 °C PSI 100 mW PSO 717 mW Maximum input-side power dissipation at TA = 25°C1) Maximum output-side power dissipation at TA 1) 2) = 25°C2) IC input-side power dissipation is derated linearly with 6.6 mW/°C above 135 °C IC output-side power dissipation is derated linearly with 5.7 mW/°C above 25°C Table 13 Package specific insulation characteristics Description Symbol Characteristic Unit Minimum external clearance CLR >4 mm Minimum external creepage CPG >4 mm Minimum comparative tracking index CTI 400 – Insulation capacitance CIO 0.9 pF 6.1 Recognized under UL 1577 (File E311313) Table 14 Recognized under UL 1577 Description Symbol Characteristic Unit Insulation Withstand Voltage / 1 min VISO 3000 V (rms) Insulation Test Voltage / 1 s VISO,TEST 3600 V (rms) Datasheet 16 2.10 2022-08-09 EiceDRIVER™ 1ED312xMU12F Compact Datasheet 7 Package dimensions Package dimensions 1.25 Min. 2) 3.9±0.1 1) 4.9±0.1 +0.10 0.15-0.05 Stand off 0.33 x 45° ax. M 7° 0.19 ... 0.25 1.75 Max. 7 +0.55 0.7 -0.3 Seating plane 8 Coplanarity 6±0.2 5 Pin1 marking 4 1 1.27 +0.08 0.41-0.06 1) Does not include plastic or metal protrusion of 0.15 mm max. per side 2) Does not include plastic protrusion of 0.25 mm max. per side. All dimensions are in units mm The drawing is in compliance with ISO 128-30, Projection Method 1 [ Drawing according to ISO 8015, general tolerances ISO 2768-mK Figure 12 ] PG-DSO-8 (Plastic (green) dual small outline package, 150 mil) Revision history Revision history Reference Description v2.1 (2022-08-09) Correction of thermal related parameters Added new product variant and related electrical characteristics v2.0 (2021-02-23) Final datasheet based on 1ED31xxMU12H (2021-09-01) New version number schema: Target/Preliminary datasheet: 0.XY; Final datasheet: 1.XY 1.10 (2021-10-11) Product variant and related electrical characteristics added, related products updated, package marking added, package rendering updated Datasheet 17 2.10 2022-08-09 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-08-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. 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