2EDN7533BXTSA1

2EDN7533BXTSA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT23-6

  • 描述:

    DRIVER IC PG-SOT23-6

  • 数据手册
  • 价格&库存
2EDN7533BXTSA1 数据手册
EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel low-side 5 A gate driver ICs with low ou tput resistance and excellent timing accuracy Description The EiceDRIVER™ 2EDN family is offered in 8-pin DSO, TSSOP and WSON packages as well as in small and versatile 6-pin SOT23 package. High output current capability together with active output voltage clamping, tight timing specifications, and optimized start-up and shut-down times, make the 2EDN family the first choice for many fast-switching applications. Product features Applications • ±5 A source/sink currents • Switch-mode power-supplies • 19 ns typ. propagation delay • DC-DC power converters • +6/-4 ns propagation delay accuracy • Synchronous rectification stages • 1.8 µs output start-up time • Power factor correction systems • 500 ns output shut-down time • Active output voltage clamping • -12 V input robustness • 5 A reverse current robustness • 4 V and 8 V UVLO options • Package options: – 8-pin DSO, TSSOP, WSON – 6-pin SOT23 • Fully qualified for industrial applications according to JEDEC Available device configurations 8-pin packages Direct configuration 8-pin packages Inverted configuration ENA 1 8 ENB ENA 1 8 ENB INA 2 7 OUTA INA 2 7 OUTA GND 3 6 VDD GND 3 6 VDD INB 4 5 OUTB INB 4 5 OUTB Peak output current 5A 4A Datasheet Inputs 8-pin DSO 6-pin packages Direct configuration 6-pin packages Inverted configuration INA 4 3 OUTA INA 4 3 OUTA INB 5 2 GND INB 5 2 GND VDD 6 1 OUTB VDD 6 1 OUTB 8-pin TSSOP 8-pin WSON 6-pin SOT23 4V UVLO 4V UVLO 4V UVLO 8V UVLO 4V UVLO direct 2EDN7534F 2EDN8534F 2EDN7534R 2EDN8534R 2EDN7534G 2EDN7534B inverting 2EDN7533F 2EDN8533F 2EDN7533R 2EDN8533R – 2EDN7533B direct 2EDN7434F – 2EDN7434R – – – www.infineon.com 8V UVLO Please read the Important Notice and Warnings at the end of this document Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Table of Contents Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 1.1 1.2 Product versions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Logic configuration versions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package versions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 2.1 2.2 2.3 2.4 Pin configuration and description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input configuration for PG-DSO-8 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input configuration for PG-TSSOP-8 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input configuration for PG-WSON-8 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input configuration for PG-SOT23-6 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 4.1 4.2 4.3 4.4 4.5 4.6 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Undervoltage lockout (UVLO) function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Driver outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Active output voltage clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 11 11 11 12 12 5 5.1 5.2 5.3 5.4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 13 15 15 6 Timing diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 7 Typical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 8 Application and implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 9 9.1 9.2 9.3 9.4 9.5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Device numbers and markings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PG-DSO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PG-TSSOP-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PG-WSON-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PG-SOT23-6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Datasheet 2 5 5 6 7 8 26 26 28 30 32 33 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Product versions 1 Product versions The EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x are available in two different logic configurations (direct and inverting), two different undervoltage lockout levels (4 V and 8 V) and four package versions. 1.1 Logic configuration versions The two input logic configurations are identified by the "x" variable in the product code EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x: • x = 3: inverting input logic • x = 4: non-inverting/direct input logic Table 1 and Table 2 describe the logic dependence of the output state from undervoltage lockout (UVLO), enable and input pins for the 8-pin and 6-pin variants respectively. If the enable pin ENA (or ENB) is either driven high or left open, the associated gate driver output depends on the respective input pin. If the enable pin ENA (or ENB) is low, the associated OUT pin is low, independent of the input signal. If a UVLO event is triggered, both OUTA and OUTB are kept in a low state, regardless of the input and enable pins status. The functional description is in Chapter 3 (Block diagram) and Chapter 4 (Functional description). Table 1 Logic table for DSO-8, TSSOP-8, WSON-8 pin packages Inputs Inverting output 1) Direct output ENA ENB INA INB UVLO OUTA OUTB OUTA OUTB x x x x active L L L L L L x x inactive L L L L H L L x inactive H L L L H L H x inactive L L H L L H x L inactive L H L L L H x H inactive L L L H H H L L inactive H H L L H H H L inactive L H H L H H L H inactive H L L H H H H H inactive L L H 1) Inactive UVLO: VDD is above UVLOON voltage threshold and control logic drives the output stage. Active UVLO: an undervoltage lockout event has been triggered H Table 2 Logic table for SOT23-6 pin package Inputs Inverting output INA INB UVLO x x L 1) Direct output OUTA OUTB OUTA OUTB active L L L L L inactive H H L L H L inactive L H H L L H inactive H L L H H H inactive L L H H 1) Inactive UVLO: VDD is above UVLOON voltage threshold and control logic drives the output stage. Active UVLO: an undervoltage lockout event has been triggered Datasheet 3 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Product versions 1.2 Package versions The EiceDRIVER™ 2EDN family is available in four different package versions. The package type is identified by the last character in the product code: • the standard PG-DSO-8 is designated by “F” (e.g. 2EDN753xF) • the small leaded PG-TSSOP-8 is designated by “R” (e.g. 2EDN753xR) • the leadless PG-WSON-8 is designated by “G” (e.g. 2EDN753xG) • the ultra tiny PG-SOT23-6 is designated by “B” (e.g. 2EDN753xB) Package drawings are available in Chapter 9 (Package outlines). Datasheet 4 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Pin configuration and description 2 Pin configuration and description 2.1 Input configuration for PG-DSO-8 package The pin configuration for all input versions of EiceDRIVER™ 2EDN7534F, 2EDN7434F, 2EDN7533F, 2EDN8534F and 2EDN8533F in the PG-DSO-8 package is shown in Figure 1. Diagrams can be viewed in Chapter 9.2 (PG-DSO-8). 1 ENA 2 INA 3 GND 4 INB Figure 1 Pin configuration PG-DSO-8, top view Table 3 Pin configuration for PG-DSO-8 package Pin Symbol number ENB 8 OUTA 7 VDD 6 OUTB 5 Description 1 ENA Enable input channel A Logic input. If ENA is high or left open, OUTA is controlled by INA. ENA low causes OUTA low 2 INA Input signal channel A Logic input, controlling OUTA (inverting or non-inverting) 3 GND Ground Gate driver reference ground 4 INB Input signal channel B Logic input, controlling OUTB (inverting or non-inverting) 5 OUTB Driver output channel B Low-impedance output with source and sink capability 6 VDD Positive supply voltage Operating range 4.5 V/8.6 V to 20 V 7 OUTA Driver output channel A Low-impedance output with source and sink capability 8 ENB Enable input channel B Logic Input. If ENB is high or left open, OUTB is controlled by INB. ENB low causes OUTB low Datasheet 5 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Pin configuration and description 2.2 Input configuration for PG-TSSOP-8 package The pin configuration for all input versions of EiceDRIVER™ 2EDN7534R, 2EDN7434R, 2EDN7533R, 2EDN8534R and 2EDN8533R in the PG-TSSOP-8 package is shown in Figure 2. Diagrams can be viewed in Chapter 9.3 (PGTSSOP-8). 1 ENA 2 INA 3 GND 4 INB Exposed Pad Figure 2 Pin configuration PG-TSSOP-8, top view Table 4 Pin configuration for PG-TSSOP-8 package Pin Symbol Number ENB 8 OUTA 7 VDD 6 OUTB 5 Description 1 ENA Enable input channel A Logic input. If ENA is high or left open, OUTA is controlled by INA. ENA low causes OUTA low 2 INA Input signal channel A Logic input, controlling OUTA (non-inverting) 3 GND Ground1) Gate driver reference ground 4 INB Input signal channel B Logic input, controlling OUTB (non-inverting) 5 OUTB Driver output channel B Low-impedance output with source and sink capability 6 VDD Positive supply voltage Operating range 4.5 V/8.6 V to 20 V 7 OUTA Driver output channel A Low-impedance output with source and sink capability 8 ENB Enable input channel B Logic Input. If ENB is high or left open, OUTB is controlled by INB. ENB low causes OUTB low 1) Exposed pad sink of PG-TSSOP-8 packages has to be connected to GND pin Datasheet 6 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Pin configuration and description 2.3 Input configuration for PG-WSON-8 package The pin configuration of EiceDRIVER™ 2EDN7534G in the PG-WSON-8 package is shown in Figure 3. Diagrams can be viewed in Chapter 9.4 (PG-WSON-8). ENA 1 INA 2 GND INB 8 ENB 7 OUTA 3 6 VDD 4 5 OUTB Exposed Pad Figure 3 Pin configuration PG-WSON-8, top view Table 5 Pin configuration for PG-WSON-8 package Pin Symbol number Description 1 ENA Enable input channel A Logic input. If ENA is high or left open, OUTA is controlled by INA. ENA low causes OUTA low 2 INA Input signal channel A Logic input, controlling OUTA (non-inverting) 3 GND Ground1) Gate driver reference ground 4 INB Input signal channel B Logic input, controlling OUTB (non-inverting) 5 OUTB Driver output channel B Low-impedance output with source and sink capability 6 VDD Positive supply voltage Operating range 4.5 V to 20 V 7 OUTA Driver output channel A Low-impedance output with source and sink capability 8 ENB Enable input channel B Logic Input. If ENB is high or left open, OUTB is controlled by INB. ENB low causes OUTB low 1) Exposed pad of PG-WSON-8 packages has to be connected to GND pin Datasheet 7 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Pin configuration and description 2.4 Input configuration for PG-SOT23-6 package The pin configuration of EiceDRIVER™ 2EDN7534B and 2EDN7533B in the PG-SOT23-6 package is shown in Figure 4. Drawings can be viewed in Chapter 9.5 (PG-SOT23-6). 1 OUTB VDD 6 2 GND INB 5 3 OUTA INA 4 Figure 4 Pin configuration PG-SOT23-6, top view Table 6 Pin configuration for PG-SOT23-6 package Pin Symbol number Description 1 OUTB Driver output channel B Low-impedance output with source and sink capability 2 GND Ground Gate driver reference ground 3 OUTA Driver output channel A Low-impedance output with source and sink capability 4 INA Input signal channel A Logic input, controlling OUTA (non-inverting) 5 INB Input signal channel B Logic input, controlling OUTB (non-inverting) 6 VDD Positive supply voltage Operating range 4.5 V to 20 V Datasheet 8 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Block diagram 3 Block diagram Simplified functional block diagrams for the DSO-8, TSSOP-8, WSON-8 package variants are given in Figure 5 and Figure 6. Block diagrams for the SOT23-6 package variants are shown in Figure 7 and Figure 8. Please refer to functional description in Chapter 4. VDD VDD VDD VDD 6 VDD UVLO 400 kΩ ENA 1 Logic A INA Active Clamp 7 OUTA 5 OUTB 2 400 kΩ ENB 8 INB 4 GND 100 kΩ VDD GND VDD Logic B Active Clamp 100 kΩ GND GND 3 GND GND Figure 5 Simplified block diagram for direct/non-inverting input configuration, 8-pin packages VDD VDD VDD 6 VDD UVLO 400 kΩ ENA VDD 1 Logic A 400 kΩ INA Active Clamp 7 OUTA 5 OUTB 2 GND VDD VDD 400 kΩ ENB 8 400 kΩ Logic B INB 4 GND 3 Active Clamp GND GND Figure 6 Datasheet Simplified block diagram for inverting input configuration, 8-pin packages 9 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Block diagram VDD VDD 6 INA 2 VDD VDD UVLO Logic A 7 OUTA 5 OUTB Active Clamp 100 kΩ GND GND VDD Logic B INB Active Clamp 4 100 kΩ GND GND 3 GND GND Figure 7 Simplified block diagram for direct/non-inverting input configuration, 6-pin packages VDD VDD VDD VDD 6 UVLO VDD 400 kΩ INA Logic A 7 OUTA 5 OUTB Active Clamp 2 GND VDD VDD 400 kΩ INB 4 GND 3 Logic B Active Clamp GND GND Figure 8 Datasheet Simplified block diagram for inverting input configuration, 6-pin packages 10 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Functional description 4 Functional description 4.1 Introduction The EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x is a fast dual-channel driver for low-side switches. Two true rail-to-rail output stages with very low output impedance and high current capability are chosen to ensure high flexibility and cover a high variety of applications. An extended negative voltage range protects input pins against ground shifts. No current flows over the ESD structure in the IC during a negative input level. All outputs are robust against reverse current. During the interaction with the power MOSFET, reverse reflected power is handled by the internal output stage. All inputs are compatible with LV-TTL signal levels. The threshold voltages have a typical hysteresis of 0.9 V, that is constant over the supply voltage range. EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x ensure optimal performance in fast-switching applications because of the low delays and rise/fall times. The maximum skew between Channel A and Channel B is 2 ns. 4.2 Supply voltage The maximum operating supply voltage is 20 V. This high voltage is valuable in order to exploit the full current capability of EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x when driving low RDSON MOSFETs. The minimum operating supply voltage is set by the undervoltage lockout function to a typical default values of 4.2 V for the 4 V-UVLO variant and 8 V for the 8 V-UVLO variant. 4.3 Undervoltage lockout (UVLO) function The undervoltage lockout function ensures that the output can be switched to its high level only if the supply voltage exceeds the UVLO threshold voltage. This protects power MOSFETs from running into linear mode, preventing excessive power dissipation if the voltage is not enough to completely turn on the switches. The UVLO level is set to a typical value of 4.2 V or 8 V (with hysteresis). UVLO of 4.2 V is normally used for logic level MOSFETs. For standard and high voltage superjunction MOSFETs, a UVLO voltage of typical 8 V is available. Table 7 UVLO turn-on and turn-off thresholds Nominal UVLO level UVLO turn-on threshold (typ.) UVLO turn-off threshold (typ.) 4.2 V 4.2 V 3.9 V 8.0 V 8.0 V 7.0 V 4.4 Input configurations As described in Chapter 1, EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x are available in two different configurations with respect to the logic of the input pins. The enable inputs are internally pulled up to a logic high voltage, i.e. the driver is enabled with these pins left open. The direct PWM inputs are internally pulled down to a logic low voltage. This prevents a switch-on event during power up and a not driven input condition. Version with inverted PWM input have an internal pull up resistor to prevent unwanted switch-on. All inputs are compatible with LV-TTL levels and provide a hysteresis of 0.9 V typ. This hysteresis is independent of the supply voltage. All input pins have a negative extended voltage range. This prevents cross-current over single wires during GND shifts between signal source (controller) and driver input. Datasheet 11 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Functional description 4.5 Driver outputs The two rail-to-rail output stages realized with complementary MOS transistors are able to provide a maximum sinking/sourcing current of 5 A (4 A output current versions are also available). This driver output stage has a shoot-through protection and current limiting behavior. After a switching event, current limitation is raised up to achieve the typical current peak for an excellent fast reaction time of the following power MOS transistor. The output impedances for the sourcing p-channel MOS have typical values of 0.8 Ω for 2EDN753x and 2EDN853x and 1.0 Ω for 2EDN743x. The output impedances for the sinking n-channel MOS transistor have typical values of 0.6 Ω for 2EDN753x and 2EDN853x and 0.8 Ω for 2EDN743x. The use of a p-channel sourcing transistor is crucial for achieving true rail-to-rail behavior and avoiding a source follower’s voltage drop. Gate drive outputs are kept actively low in case of floating ENx or INx inputs, or during startup or power down if the supply voltage is below the UVLO threshold. 4.6 Active output voltage clamping The undervoltage lockout (UVLO) protection ensures no driver operation when the supply voltage is below the UVLO threshold. However, this is not sufficient to keep output low when VDD is far below the UVLO threshold. As a result, fast dv/dt of the switches could trigger undesired Vgs of the driven device, leading to abnormal turn-ons. The fast active output voltage clamping of EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x is intended to actively keep the driver output low when the VDD voltage is between 1.2V and UVLOON threshold, overcoming the unwanted turn-on issue listed above and ensuring safe off state before device operation. This structure allows fast reaction and effective clamping of the output pins (OUTx). The exact reaction time depends on the power supply (VDD) and on the output voltage levels. Undervoltage Lockout together with the output active clamping ensure that the output is actively held low in case of insufficient supply voltage. Table 8 Datasheet Logic table in case of insufficient supply voltages Inputs Supplies Output INx VDD OUTx x 1.2 V < VDD < UVLOVDD,ON L 12 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Electrical characteristics 5 Electrical characteristics Note: The absolute maximum ratings are listed in Table 9. Stresses beyond these values may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 5.1 Absolute maximum ratings Table 9 Absolute maximum ratings Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. VDD -0.3 – 22 V – Voltage at pins INA, INB, ENA, VIN ENB -12 – 22 V – Voltage at pins OUTA, OUTB -0.3 – VDD+ 0.3 V 1) -2 – VDD+ 2 V Repetitive pulse < 200 ns 2) Positive supply voltage VOUT Reverse current peak at pins OUTA, OUTB ISNKREV ISRCREV -5 – – – 5 Apk < 500 ns Junction temperature TJ -40 – 150 °C – Storage temperature TS -55 – 150 °C – ESD capability VESD – – 0.5 kV ESD capability VESD – – 2.0 kV 1) 2) 3) 4) Charged Device Model (CDM) 3) Human Body Model (HBM) 4) Voltage spikes resulting from reverse current peaks are allowed Values are verified by characterization on bench According to JESD22-002 According to JESD22-A114-B (discharging 100 pF capacitor through 1.5 kΩ resistor) 5.2 Thermal characteristics Table 10 Thermal characteristics Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition PG-DSO-8, Tamb = 25°C Thermal resistance junctionambient RthJA25 – 111 – K/W 1) Thermal resistance junctioncase (top) RthJC25 – 66 – K/W 2) Thermal resistance junctionboard RthJB25 – 59 – K/W 3) Characterization parameter junction-top ΨthJC25 – 12 – K/W 4) Characterization parameter junction-board ΨthJB25 – 57 – K/W 5) Datasheet 13 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Electrical characteristics Table 10 Thermal characteristics (continued) Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. RthJA25 – 48 – K/W 1)6) Thermal resistance junction-case RthJP25 (top) – 74 – K/W 2) Thermal resistance junctionboard RthJB25 – 22.5 – K/W 3)6) Characterization parameter junction-top ΨthJC25 – 3 – K/W 4)6) Characterization parameter junction-board ΨthJB25 – 21 – K/W 5)6) RthJA25 – 46 – K/W 1)6) Thermal resistance junction-case RthJP25 (top) – 73 – K/W 2) Thermal resistance junctionboard RthJB25 – 18 – K/W 3)6) Characterization parameter junction-top ΨthJC25 – 2 – K/W 4)6) Characterization parameter junction-board ΨthJB25 – 17.5 – K/W 5)6) RthJA25 – 163 – K/W 1) Thermal resistance junction-case RthJC25 (top) – 69 – K/W 2) Thermal resistance junctionboard RthJB25 – 36 – K/W 3) Characterization parameter junction-case (top) ΨthJC25 – 13 – K/W 4) PG-TSSOP-8, Tamb = 25°C Thermal resistance junctionambient PG-WSON-8, Tamb = 25°C Thermal resistance junctionambient PG-SOT23-6, Tamb=25°C Thermal resistance junctionambient 5) Characterization parameter ΨthJB25 – 36 – K/W junction-board 1) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a 2) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88 3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8 4) The characterization parameter junction-top, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining Rth, using a procedure described in JESD51-2a (sections 6 and 7) 5) The characterization parameter junction-board, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining Rth, using a procedure described in JESD51-2a (sections 6 and 7) 6) Characterization done on a JEDEC 2s2p PCB with thermal via array connected to the first inner copper layer under the exposed pad Datasheet 14 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Electrical characteristics 5.3 Operating range Table 11 Operating range Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Min. defined by UVLO Supply voltage VDD 4.5 – 20 V Logic input voltage VIN -10 – 20 V – °C 1) Junction temperature TJ -40 – 150 1) Continuous operation above 125°C may reduce life time 5.4 General electrical characteristics Unless otherwise noted, min./max. values of characteristics are the lower and upper limits respectively. They are valid within the full operating range. The supply voltage is VDD = 12 V. Typical values are given at TJ = 25°C. Table 12 Power supply Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition VDD quiescent current IVDDQU1 0.5 0.9 1.2 mA OUT = high, VDD = 12 V VDD quiescent current IVDDQU2 0.3 0.5 0.7 mA OUT = low, VDD = 12 V Unit Note or Test Condition Table 13 Undervoltage lockout for logic level MOSFET Parameter Symbol Values Min. Typ. Max. Undervoltage Lockout (UVLO) UVLOON turn on threshold – 4.2 4.5 V – Undervoltage Lockout (UVLO) UVLOOFF turn off threshold 3.6 3.9 – V – UVLO threshold hysteresis 0.25 0.3 0.35 V – Table 14 UVLOHYS Undervoltage lockout for standard and superjunction MOSFET version Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Undervoltage Lockout (UVLO) UVLOON turn on threshold – 8.0 8.6 V – Undervoltage Lockout (UVLO) UVLOOFF turn off threshold 6.5 7.0 – V – UVLO threshold hysteresis 0.8 1.0 1.2 V – Datasheet UVLOHYS 15 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Electrical characteristics Table 15 Logic inputs INA, INB, ENA, ENB Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Input voltage threshold for transition LH VINH 1.9 2.1 2.3 V – Input voltage threshold for transition HL VINL 1.0 1.2 1.4 V – Input pull up resistor RINH – 400 – kΩ 1) Input pull down resistor RINL – 100 – kΩ 2) Unit Note or Test Condition 1) Inputs with initial high logic level 2) Inputs with initial low logic level Table 16 Static output characteristics for 2EDN753x, 2EDN853x Parameter Symbol Values Min. Typ. Max. High level (sourcing) output resistance RONSRC 0.4 0.8 1.4 Ω ISRC = 50 mA High level (sourcing) output current 1) ISRCPEAK – 5.0 – A – Low level (sinking) output resistance RONSNK 0.35 0.6 1.2 Ω ISNK = 50 mA Low level (sinking) output current 1) ISNKPEAK – -5.0 – A – 1) Parameter is not subject to production test - verified by design/characterization Table 17 Static output characteristics for 2EDN743x Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition High level (sourcing) output resistance RONSRC 0.5 1.0 1.7 Ω ISRC = 50 mA High level (sourcing) output current 1) ISRCPEAK – 4.0 – A – Low level (sinking) output resistance RONSNK 0.4 0.8 1.45 Ω ISNK = 50 mA Low level (sinking) output current 1) ISNKPEAK – -4.0 – A – 1) Parameter is not subject to production test - verified by design/characterization Datasheet 16 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Electrical characteristics Table 18 Dynamic Characteristics (see Figure 9, Figure 10, Figure 11 and Figure 12) Parameter Symbol Values Min. Typ. Max. Unit Note or Test Condition Input/Enable to output propagation delay tPDlh 15 19 25 ns CLOAD= 1.8 nF, VDD= 12 V; low to high transition at Input/Enable Input/Enable to output propagation delay tPDhl 15 19 25 ns CLOAD= 1.8 nF, VDD= 12 V high to low transition at Input/Enable Input/Enable to output ∆tPD propagation delay mismatch between the two channels on the same IC – – 2 ns – Rise time 1) tRISE – 8.6 15 ns CLOAD = 1.8 nF, VDD = 12 V Fall time 1) tFAll – 6 13 ns CLOAD = 1.8 nF, VDD = 12 V Minimum input pulse width that changes output state 1) tPW – 6 10 ns CLOAD = 1.8 nF, VDD = 12 V VDD start-up time 1) from UVLOON to OUTx tSTART – 1.8 – µs VDD rising to 12 V; see Figure 11 VDD deactivation time 1) from UVLOOFF to OUTx tSTOP – 500 – ns VDD falling from 12 V; see Figure 11 20 – ns see Figure 13 Activation time of output tCLAMP,OUT – clamping in UVLO condition 1) 1) Parameter is not subject to production test - verified by component verification Datasheet 17 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Timing diagrams 6 Timing diagrams Figure 9 shows the definition of rise, fall and delay times for the inputs of the non-inverting/direct version (with enable pin high or open). ENx (high) VIN H VINL VIN H VINL INx 90% OUT 10% TPDON Figure 9 TRIS E TPDOF F TFAL L Propagation delay, rise and fall time definition for the direct/non-inverting configuration Figure 10 shows the definition of rise, fall and delay times for the inputs of the inverting version (with enable pins high or open). ENx (high) VINH VIN L INx VINH VINL 90% OUT 10% TPDON Figure 10 Datasheet TRIS E TPDOF F TFAL L Propagation delay, rise and fall time definition for the inverting configuration 18 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Timing diagrams Figure 11 illustrates the undervoltage lockout function. INx High logic level ENx High logic level UVLOON UVLOOFF VDD OUTx tSTART,VDD Figure 11 tSTOP,VDD UVLO behaviour, input ENx and INx drives OUTx normally high Figure 12 illustrates the minimum input pulse width that changes output state. ENx (high) VIN H VINL VIN H VINL INx TPW 90% OUTx Figure 12 Datasheet Minimum input pulse width definition 19 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Timing diagrams Figure 13 illustrates tCLAMP,OUT, the time required to clamp potential output induced overshoots in UVLO condition (VDD < UVLOON) VDD 1.2 V OUT tCLAMP,OUT Figure 13 Datasheet Activation time of output clamping in UVLO conditions (unloaded output) 20 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Typical characteristics 7 Typical characteristics Figure 14 Typical undervoltage lockout behavior vs. temperature for 2EDN7x (4 V) Figure 15 Typical undervoltage lockout behavior vs. temperature for 2EDN8x (8 V) Datasheet 21 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Typical characteristics Figure 16 Input characteristics (INx and ENx) Figure 17 Propagation delay (INx) on different input logic levels (see Figure 9) Datasheet 22 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Typical characteristics Figure 18 Propagation delay (ENx) on different input logic levels (see Figure 10) Figure 19 Rise/fall times with load on output (see Figure 9) Datasheet 23 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Typical characteristics Figure 20 Power consumption related to temperature and power supply Figure 21 Current consumption versus frequency Datasheet 24 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Application and implementation 8 Application and implementation Note: The following information is given as an example for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device Figure 22 and Figure 23 show typical applications for the 8-pin and 6-pin package versions respectively. DSO, TSSOP, WSON 8-pins Load1 ENB Load2 VDD M1 ENA 1 ENA ENB 8 PWMA 2 INA OUTA 7 33 GND VDD 6 Rg1 M2 Rg2 44 INB PWMB OUTB 5 CVDD GND Figure 22 Typical application for 8-pin packages Load1 SOT23 6-pins VDD Load2 M1 Rg1 PWMA 42 INA OUTA 37 PWMB 53 INB GND 26 M2 Rg2 64 VDD OUTB 15 CVDD GND Figure 23 Datasheet GND Typical application for 6-pin packages 25 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Package outlines 9 Package outlines Note: For further information on package types, recommendation for board assembly, please go to: Infineon packages. 9.1 Device numbers and markings Table 19 Product versions Part number Orderable part number (OPN) Device marking 2EDN7534F 2EDN7534FXTMA1 2N7534AF EiceDRIV XXHYYWW 2EDN7434F 2EDN7434FXTMA1 2N7434AF EiceDRIV XXHYYWW 2EDN7533F 2EDN7533FXTMA1 2N7533AF EiceDRIV XXHYYWW 2EDN8534F 2EDN8534FXTMA1 2N8534AF EiceDRIV XXHYYWW 2EDN8533F 2EDN8533FXTMA1 2N8533AF EiceDRIV XXHYYWW 2EDN7534R 2EDN7534RXTMA1 2N7534 AR HYYWW 2EDN7434R 2EDN7434RXTMA1 2N7434 AR HYYWW 2EDN7533R 2EDN7533RXTMA1 2N7533 AR HYYWW 2EDN8534R 2EDN8534RXTMA1 2N8534 AR HYYWW 2EDN8533R 2EDN8533RXTMA1 2N8533 AR HYYWW 2EDN7534G 2EDN7534GXTMA1 2N7534 AG HYYWW 2EDN7534B 2EDN7534BXTSA1 YW1) 754 YW1) 753 1) The date code digits "Y" and "W" in device marking for the SOT23-6 package are explained in Table 20 and Table 21 2EDN7533B Datasheet 2EDN7533BXTSA1 26 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Package outlines Table 20 Year date code marking - digit “Y” Year Y Year Y Year Y 2000 0 2010 0 2020 0 2001 1 2011 1 2021 1 2002 2 2012 2 2022 2 2003 3 2013 3 2023 3 2004 4 2014 4 2024 4 2005 5 2015 5 2025 5 2006 6 2016 6 2026 6 2007 7 2017 7 2027 7 2008 8 2018 8 2028 8 2009 9 2019 9 2029 9 Table 21 Week date code marking - digit “W” Week W Week W Week W Week W Week W 1 A 12 N 23 4 34 h 45 v 2 B 13 P 24 5 35 j 46 x 3 C 14 Q 25 6 36 k 47 y 4 D 15 R 26 7 37 l 48 z 5 E 16 S 27 a 38 n 49 8 6 F 17 T 28 b 39 p 50 9 7 G 18 U 29 c 40 q 51 2 8 H 19 V 30 d 41 r 52 3 9 J 20 W 31 e 42 s – – 10 K 21 Y 32 f 43 t – – 11 L 22 Z 33 g 44 u – – Datasheet 27 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Package outlines 9.2 PG-DSO-8 Figure 24 PG-DSO-8 outline Datasheet 28 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Package outlines Figure 25 PG-DSO-8 footprint 0.3 12 ±0.3 5.2 8 1.75 6.4 2.1 Figure 26 Datasheet PG-DSO-8 packaging 29 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Package outlines 9.3 PG-TSSOP-8 Figure 27 PG-TSSOP-8 outline Figure 28 PG-TSSOP-8 footprint Datasheet 30 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Package outlines Figure 29 Datasheet PG-TSSOP-8 packaging 31 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Package outlines 67$1' 2))  0$; PG-WSON-8  9.4 %27720 9,(: $ % & & % &     & [ &23/$1$5,7< $   [ % s $ &      & 6($7,1* 3/$1(  [ r  [ [ s ,1'(; 0$5.,1* /$6(5(' s  s  &  0$; $// ',0(16,216 $5( ,1 81,76 00 7+( '5$:,1* ,6 ,1 &203/,$1&( :,7+ ,62  352-(&7,21 0(7+2'  > Figure 30 ,1'(; 0$5.,1*  @ PG-WSON-8 outline   [       [    [        [   [    [  FRSSHU Figure 31 Datasheet VROGHU PDVN VWHQFLO DSHUWXUHV PG-WSON-8 footprint 32 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Package outlines 8 PIN 1 INDEX MARKING 0.3 12 3.35 4 Min. 0.95 Max. 1.25 3.35 ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ PG-WSON-8 packaging 9.5 PG-SOT23-6    & $% [  & ' [ s r r      *$8*( 3/$1(   s 67$1' 2)) s Figure 32 ] s &  & 6($7,1* &23/$1$5,7< 3/$1( s  & $ % [ %27720 9,(: $   ,1'(; 0$5.,1*  & [  '       %   '2(6 127 ,1&/8'( 3/$67,& 25 0(7$/ 3527586,21 2)  0$; 3(5 6,'( $// ',0(16,216 $5( ,1 81,76 00 7+( '5$:,1* ,6 ,1 &203/,$1&( :,7+ ,62  352-(&7,21 0(7+2'  > Figure 33 Datasheet @ PG-SOT23-6 outline 33 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Package outlines 0.5 0.95 copper solder mask 0.5 1.2 1.2 1.2 1.2 0.8 0.8 0.95 stencil apertures All dimensions are in units mm Figure 34 PG-SOT23-6 footprint 4 3.2 8 4 0.25 PIN 1 INDEX MARKING 3.3 All dimensions are in units mm The drawing is in compliance with ISO 128-30, Projection Method 1 [ Figure 35 Datasheet 1.55 ] PG-SOT23-6 packaging 34 Rev.1.0 2021-10-29 EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x Dual-channel 5 A and 4 A, high-speed, low-side gate driver ICs Revision history 10 Revision history Version Date Rev.1.0 Datasheet Changes 2021-10-29 Datasheet release 35 Rev.1.0 2021-10-29 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-10-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference EiceDRIVER™ 2EDN753x/2EDN853x/2EDN743x IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2EDN7533BXTSA1
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    2EDN7533BXTSA1
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      2EDN7533BXTSA1
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        2EDN7533BXTSA1

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          2EDN7533BXTSA1
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