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2EDS8265HXUMA3

2EDS8265HXUMA3

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

  • 描述:

    2EDS8265HXUMA3

  • 数据手册
  • 价格&库存
2EDS8265HXUMA3 数据手册
Product brief EiceDRIVER™ 2EDS8265H and 2EDS8165H Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing Device overview VDDI SLDON UVLO SLDO UVLO TX INA INB Control logic DISABLE NC Dead time control TX RX Input- to-output isolation Overview The EiceDRIVER™ 2EDS8265H and 2EDS8165H are reinforced isolated gate drivers for secondary-side control over the mandatory safe isolation barrier in SMPS. The 2EDS8265H strong 4 A/8 A source/sink dual-channel gate driver comes with a very high 150 V/ns CMTI (Common Mode Transient Immunity) for robust operation with fast CoolMOS™ and high power switching noise environment. The very fast propagation delay of 37 ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. The 2EDS8165H with 1 A/2 A is available for smaller MOSFETs or PWM signal/data decoupling for very high power designs working with local boost drivers. Safety certificates in accordance with UL1577, VDE0884-10, IEC62386 and IEC60950 will be provided with these devices. The 2EDFS8xx5H parts come in wide-body 300 mil DSO16 packages. Logic OUTA Channel-to-channel isolation UVLO RX Logic GNDI Product benefits System benefits Fast switching with accurate timing Efficiency gain and lower losses ›› Lower switching losses in half-bridges due to fast and accurate turn on/off ›› Perfect for new digital, fast high resolution PWM control including light load optimization Enabling higher system efficiency and higher power density designs Optimized for area and system BOM ›› Isolation and driver in one package ›› Low power dissipation due to low on-resistance ›› Output stages with 5A reverse current capability Improved thermal behavior at smaller form factor ›› DSO package with 2.3 mm height versus volume > 1 cm3 for pulse transformers ›› Eliminates two costly protection diodes on the gate driver outputs Improving long term competitive cost position, integration and mass manufacturability Robust against switching noise ›› Floating drivers are able to handle large inductive voltage over- and undershoots ›› Very high common mode transient immunity CMTI >150 V/ns ›› Undervoltage lockout function for switch protection Protection and safe operation ›› Ideal for use in high power designs with fast switching transients ›› Reliable CT coreless transformer PWM signal chain for noisy power switching einvironment Output- to-output channel isolation ›› Functional level galvanic isolation Flexible configurations ›› HS+LS, HS+HS or LS+LS Lower EMI by ground isolation, driver proximity to MOSFETs or when using 4-pin Kelvin source MOSFETs Input-to-output channel isolation ›› Reinforced galvanic isolation Regulatory safety ›› Reinforced isolation for secondary-side control Simplified safety approval through component (VDE884-x, UL1577 and system (IEC60950, IEC62386) certificates ›› Propagation delay typ. 37 ns with 3 ns channel-to-channel mismatch ›› Max. delay variation ~14 ns www.infineon.com/2EDi GNDA VDDB OUTB GNDB EiceDRIVER™ 2EDS8265H and 2EDS8165H block diagram Product key features ›› Available with 4 A/8 A and 1 A/2 A source/sink currents VDDA Extending end-product lifetime by improving safe operation of power switches in normal and abnormal field (grid) conditions Product brief EiceDRIVER™ 2EDS8265H and 2EDS8165H Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing Application diagram example Pin configuration DSO-16 DSO-16 INA INA 11 INB INB 22 VDDI VDDI 33 Validfor: for: Valid NarrowBody body Narrow 2EDF7275F 2EDF7275F 2EDF7175F Wide body 2EDS8265H Wide Body 2EDS8165H 2EDS8265H 2EDS8165H Totem-Pole bridgeless-Boost PFC stage 16 16 VDDA VDDA 15 15 OUTA OUTA 14 14 GNDA GNDA 13 13 N.C. N.C. 12 12 N.C. N.C. 11 11 VDDB VDDB GNDI GNDI 44 DISABLE DISABLE 55 N.C. N.C. 66 N.C. N.C. 7 7 10 10 OUTB OUTB SLDON SLDON 8 8 9 9 GNDB GNDB Q1 LLC resonant DC-DC with sync rectifier Q3 Q5 Bulk cap Q6 EMI Filter AC LINE Line V PFC Control IC VBus IL Q2 Q4 Reinforced isolated gate driver 4 A/8 A Q1 2EDF 2EDN Q2 Q3 2EDF Q4 2EDS Functional isolated gate driver 4 A/8 A LLC controller Reinforced isolated gate driver 4 A/8 A New high-speed, high-resolution digital controllers are able to simultaneously provide control signals for LLC and SyncRec stage, with tight control of the switches on the (safe) secondary side. Besides form-factor, the improved timing accuracy required in today’s optimized power systems is one of the key benefits of 2EDS8x65H compared to classic pulse transformer solutions, finally leading to greatly improved power conversion efficiency. The unique combination of the 2EDi cross-family shared key features, regardless of isolation class, provides new power partitioning options and enables the system designer to work across any isolation barriers/power stages with consistent timing, best-in-class gate driver performance and reduced system bill of materials. Product portfolio Part number Orderable part number (OPN) 2EDS8265H 2EDS8265HXUMA1 2EDS8165H 2EDS8165HXUMA1 Package WB-DSO16 10.3 mm x 10.3mm PWM Input type Driver source/ Sink current Gate driver UVLO Input to output isolation Isolation class 4 A/8 A Dual (INA, INB) 8V Reinforced* Rating VIOTM = 8 kVpeak (VDE0884-1x) 1 A/2 A VISO = 5.7 kVrms (UL1577) Surge testing Safety certification* VIOSM = 10 kVpeak (IEC60065) VDE0884-10 UL1577 IEC60950, IEC62368,CQC Dead-time control yes *Certification pending (expected Q3/2018) For further device information and application notes visit the 2EDi EiceDRIVER™ family under www.Infineon.com/2EDi Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2018 Infineon Technologies AG. All Rights Reserved. Please note! THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE. WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED APPLICATION. WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR THE INFORMATION GIVEN HEREIN AT ANY TIME. Order Number: B152-I0648-V1-7600-EU-EC-P Date: 05/ 2018 Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices, please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any life-­ endangering applications, including but not limited to medical, nuclear, military, life-critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury.
2EDS8265HXUMA3 价格&库存

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2EDS8265HXUMA3
    •  国内价格 香港价格
    • 1+34.927801+4.22610
    • 10+29.8372010+3.61020
    • 100+25.70480100+3.11020
    • 250+24.41120250+2.95360
    • 500+21.90780500+2.65070
    • 1000+19.404401000+2.34790
    • 1500+16.469801500+1.99280

    库存:2736