6MS16017P43W40383NOSA1 数据手册
TechnicalInformation
6MS16017P43W40383
Generalinformation
IGBTStackfortypicalvoltagesofupto690VRMS
Ratedoutputcurrent880ARMS
· High power converter
· Wind power
· Motor drives
· IHM module with IGBT4
· AlSiC baseplate
Topology
B6I
Application
Inverter
Load type
Resistive, inductive
Semiconductor (Inverter
Section)
6x FF800R17KP4_B2
DC Link
8 mF
Heatsink
Water cooled
Implemented sensors
Current, voltage, temperature
Driver signals IGBT
Electrical
Sales - name
6MS16017P43W40383
SP - No.
SP001201428
DC Link
Inverter Section
~
~
~
Signal
conditioning
& monitor
Driver
3 phases
Electrical interface
preparedby:OW
dateofpublication:2017-06-26
approvedby:YZ
revision:3.1
1
TechnicalInformation
6MS16017P43W40383
Absolutemaximumratedvalues
Collector-emitter voltage
IGBT; Tvj = 25°C
Repetitive peak reverse voltage Diode; Tvj = 25°C
VCES
1700
V
VRRM
1700
V
DC link voltage
No switching, t= 5s, once a day
VDC
1500
V
Insulation management
according to installation height of 2000 m
Vline
690
VRMS
Insulation test voltage
according to EN 50178, f = 50 Hz, t = 1 s
VISOL
2.5
kVRMS
Repetitive peak collector
current inverter section (IGBT)
tp = 1 ms
ICRM2
2850
A
Repetitive peak forward current
tp = 1 ms
inverter section (Diode)
IFRM2
2850
A
Continuous current inverter
section
IAC2
980
ARMS
Tvjop
125
°C
fsw2
5
kHz
Junction temperature
under switching conditions
Switching frequency inverter
section
Notes
Further maximum ratings are specified in the following dedicated sections
Characteristicvalues
DCLink
min.
Rated voltage
VDC
Over voltage shutdown
within 150 µs
Capacitor
1 s, 20 p, rated tol. ±10 %
Maximum ripple current
per device, Tamb = 55 °C
Balance or discharge resistor
per DC link unit
typ.
max.
1100
1216
V
1250
V
CDC
8
mF
type
Foil
Iripple
49
Rb
6
ARMS
kΩ
Notes
Operation above 1100 V subject to reduced operating time according to EN 61071
InverterSection
min.
Rated continuous current
VDC = 1100 V, VAC = 690 VRMS, cos(ϕ) = 0.85,
fAC sine = 50 Hz, fsw = 2000 Hz, Tinlet = 40°C, Tj ≤ 125 °C
Continuous current at low
frequency
VDC = 1100 V, fAC sine = 0 Hz, fsw = 2000 Hz, Tinlet = 40 °C,
Tj ≤ 125 °C
Rated continuous current for
150% overload capability
typ.
max.
IAC
880
ARMS
IAC low
440
ARMS
IAC 150% = 590 ARMS, ton over = 60 s, Tj ≤ 125 °C
IAC over1
890
ARMS
Rated continuous current for
150% overload capability
IAC 150% = 685 ARMS, ton over = 3 s, Tj ≤ 125 °C
IAC over2
980
ARMS
Over current shutdown
within 15 µs
IAC OC
2500
Apeak
Power losses
IAC = 880 A, VDC = 1100 V, VAC = 690 VRMS,
cos(ϕ) = 0.85, fAC sine = 50 Hz, fsw = 2000 Hz,
Tinlet = 40 °C, Tj ≤ 125 °C
Ploss
11500
W
InverterSection(specificcondition)
min.
Specific continuous current
VDC = 1050 V, cos(ϕ) = -0.85, fAC sine = 13 Hz,
fsw = 2100 Hz, Tinlet = 45 °C, Tj ≤ 125 °C
preparedby:OW
dateofpublication:2017-06-26
approvedby:YZ
revision:3.1
2
IACsp
typ.
max.
850
ARMS
TechnicalInformation
6MS16017P43W40383
Controllerinterface
Driver and interface board
ref. to separate Application Note
DR110
Auxiliary voltage
Vaux
min.
typ.
max.
18
24
30
Auxiliary power requirement
Vaux = 24 V
Paux
Digital input level
resistor to GND 1.8 kΩ, capacitor to GND 4 nF,
logic high = on, min. 15 mA
Vin low
0
40
Vin high
Digital output level
open collector, logic low = no fault, max. 15 mA
Vout low
V
W
4
V
11
15
V
0
1.5
V
Vout high
15
V
Analog current sensor output
inverter section
load max 1 mA, @ 880 ARMS
VIU ana2
VIV ana2
VIW ana2
Analog DC link voltage sensor
output
load max 1 mA, @ 1100 V
VDC ana
Analog temperature sensor
output inverter section (NTC)
load max 1 mA, @TNTC = 64 °C,
corresponds to Tj = 122 °C at rated conditions
VTheta NTC2
7.5
V
Analog temperature sensor
output inverter section
(Simulated)
load max 1 mA, @TNTC = 64 °C,
corresponds to Tj = 122 °C at rated conditions
VTheta sim2
9.5
V
VError OT2
10
V
Over temperature shutdown
inverter section
Systemdata
EMC robustness
4.3
4.4
4.5
V
7.7
7.9
8.1
V
min.
according to IEC 61800-3 at named
interfaces
2
kV
control
VBurst
1
kV
aux (24V)
Vsurge
Operational ambient
temperature
PCB, DC link capacitor, bus bar, excluding cooling
medium
Cooling air velocity
PCB, DC link capacitor, bus bar, standard atmosphere
Humidity
no condensation
Vibration
according to IEC 60721
Shock
according to IEC 60721
1
-40
65
°C
Top amb
-25
55
°C
Vair
2
Rel. F
0
m/s
95
%
10
m/s²
100
m/s²
273
mm
IP00
Pollution degree
2
width x depth x height
1090
Weight
496
78
Heatsinkwatercooled
according to coolant specification from Infineon
∆V/∆t
min.
typ.
12
15
Water pressure
Water pressure drop
kV
Tstor
Protection degree
Water flow
max.
VBurst
Storage temperature
Dimensions
typ.
power
kg
max.
dm³/min
8
∆p
at 12 dm³/min water flow
Coolant inlet temperature
Tinlet
Thermal resistance heatsink to
per switch
ambient
Rth,ha
Cooling channel material
550
-40
55
0.046
Aluminum
Notes
Composition of coolant: Water and 52 vol. % Antifrogen N
preparedby:OW
dateofpublication:2017-06-26
approvedby:YZ
revision:3.1
3
bar
mbar
°C
K/W
TechnicalInformation
6MS16017P43W40383
Unit 1
(not
installed
Overviewofoptionalcomponents
Inverter
Section
Parallel interface board
Voltage sensor
×
Current sensor
×
Temperature sensor
×
Temperature simulation
×
DC link capacitors
×
Collector-emitter Active Clamping
×
Notes
Setting of Active Clamping TVS-Diodes: VZ = 1280 V
preparedby:OW
dateofpublication:2017-06-26
approvedby:YZ
revision:3.1
4
Unit 3
(not
installed)
TechnicalInformation
6MS16017P43W40383
fsw - derating curve IGBT (motor), Diode (generator)
VDC = 1100 V, VAC = 690 VRMS, fAC sine = 50 Hz, cosϕ = ±0.85,
Tinlet = 40 °C and nom. cooling conditions
120
120
110
110
100
100
90
90
80
80
70
70
IAC/Inom [%]
IAC/Inom [%]
fAC sine - derating curve IGBT (motor), Diode (generator)
VDC = 1100 V, VAC = 690 VRMS, fsw = 2 kHz, cosϕ = ±0.85,
Tinlet = 40 °C and nom. cooling conditions
60
50
60
50
40
40
30
30
20
20
IGBT, cosϕ = 0.85
Diode, cosϕ = -0.85
10
0
0
5
10
15
20
25
IGBT, cosϕ = 0.85
Diode, cosϕ = -0.85
10
30
35
40
45
0
1500
50
2000
fAC sine [Hz]
2500
3000
3500
4000
4500
5000
fsw [Hz]
Tinlet - derating curve IGBT (motor), Diode (generator)
VDC = 1100 V, VAC = 690 VRMS, fsw = 2 kHz, fAC sine = 50 Hz,
cosϕ = ±0.85 and nom. cooling conditions
Analog temperature sensor output VTheta NTC
Sensing NTC of IGBT module
120
10
110
9
100
8
90
7
6
70
VTheta NTC [V]
IAC/Inom [%]
80
60
50
40
5
4
3
30
2
20
0
-25
1
IGBT, cosϕ = 0.85
Diode, cosϕ = -0.85
10
-15
-5
5
15
25
35
45
0
55
Tinlet [°C]
preparedby:OW
dateofpublication:2017-06-26
approvedby:YZ
revision:3.1
0
20
40
TNTC [°C]
5
60
80
100
TechnicalInformation
6MS16017P43W40383
Tvj,sim vs. IAC - Simulated junction temperatur
VDC = 1100 V, VAC = 690 VRMS, fsw = 2 kHz,
Tinlet = 40 °C and nom. cooling conditions
Analog temperature sensor output VTheta sim
VDC = 1100 V, VAC = 690 VRMS, fsw = 2 kHz,
nom. cooling conditions
130
10
fAC sine = 50 Hz
fAC sine = 12 Hz
fAC sine = 5 Hz
120
fAC sine = 50 Hz
fAC sine = 12 Hz
fAC sine = 5 Hz
9
110
100
VTheta sim [V]
Tvj,sim [°C]
8
90
7
6
80
5
70
60
400
500
600
700
800
4
900
IAC [A]
0.050
0.045
0.040
Zth,ha [K/W]
0.035
0.030
0.025
0.020
0.015
0.010
0.000
i:
1
2
3
4
ri[K/W]: 0.00002 0.03882 0.00646 0.0003
τi[s]:
10.58
19.06
57.55
71.24
0.1
1
10
70
80
90
100
Tvj,sim [°C]
Zth,ha - thermal impedance heatsink to ambient per switch
nom. cooling conditions
0.005
60
100
1000
t [s]
preparedby:OW
dateofpublication:2017-06-26
approvedby:YZ
revision:3.1
6
110
120
130
dateofpublication:2017-06-26
approvedby:YZ
revision:3.1
7
C
D
E
F
G
9
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