92-0235

PD - 95193A IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Ignition IGBT IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features • Most Rugged in Industry • Logic-Level Gate Drive • > 6KV ESD Gate Protection • Low Saturation Voltage • High Self-clamped Inductive Switching Energy • Lead-Free TERMINAL DIAGRAM Collector •BVCES = 370V min, 430V max •IC @ TC = 110°C = 14A •VCE(on) typ= 1.2V @7A @25°C • IL(min)=11.5A @25°C,L=4.7mH R1 Gate R2 Emitter Description The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL. Absolute Maximum Ratings Parameter Max Unit Condition VCES Collector-to-Emitter Voltage Clamped V RG = 1K ohm IC @ TC = 25°C Continuous Collector Current 20 A VGE = 5V IC @ TC = 110°C Continuous Collector Current 14 A VGE = 5V IG Continuous Gate Current 1 mA IGp Peak Gate Current 10 mA tPK = 1ms, f = 100Hz VGE Gate-to-Emitter Voltage PD @ TC = 25°C Clamped V Maximum Power Dissipation 125 W PD @ T = 110°C Maximum Power Dissipation 54 W TJ Operating Junction and - 40 to 175 °C TSTG Storage Temperature Range - 40 to 175 °C VESD Electrostatic Voltage IL Self-clamped Inductive Switching Current 6 KV C = 100pF, R = 1.5K ohm 11.5 A Min Typ L = 4.7mH, T = 25°C Thermal Resistance Parameter Max RθJC Thermal Resistance, Junction-to-Case 1.2 RθJA Thermal Resistance, Junction-to-Ambient 40 Unit °C/W (PCB Mounted, Steady State) ZθJC www.irf.com Transient Thermal Impedance, Juction-to-Case (Fig.11) Page 1 11/19/04 Ignition IGBT IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Off-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified) Parameter Min Typ Max BVCES Collector-to-Emitter Breakdown Voltage 370 400 BVGES Gate-to-Emitter Breakdown Voltage 10 I CES R1 Gate Series Resistance R2 Gate-to-Emitter Resistance 24 Fig V I G=2m A 15 µA R G=1K ohm, VCE = 250V 100 µA R G=1K ohm, VCE = 250V, TJ =150°C V I C = -10m A 28 20 Conditions R G = 1K ohm, I C=7A, VGE = 0V ohm 75 10 Unit V 12 Collector-to-Emitter Leakage Current BVCER Emitter-to-Collector Breakdown Voltage 430 30 K ohm On-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified) Parameter Min Typ Max 1.2 VCE(on) Collector-to-Emitter Saturation 1.35 1.55 Voltage VGE(th) Gate Threshold Voltage 1.3 Transconductance 10 IC Collector Current 20 Conditions Fig I C = 7A, VGE = 4.5V V I C = 10A, VGE = 4.5V 1 o 2 o 4 1.35 1.55 I C = 10A, VGE = 4.5V, TC= -40 C 1.5 1.7 I C = 14A, VGE = 5.0V, TC= -40 C 1.55 1.75 I C = 14A, VGE = 5.0V o I C = 14A, VGE = 5.0V, TC=150 C 1.6 1.8 1.8 2.2 0.75 gfs Unit 1.40 VCE = VGE, I C = 1 m A, TC=25 C o VCE = VGE, I C = 1 m A, TC=150 C S VCE = 25V, I C = 10A, TC=25 C A VCE = 10V, VGE = 4.5V 1.8 15 19 o V 3, 5 8 o Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min Typ Max Qg Total Gate charge 27 Q ge Q gc Gate - Emitter Charge 2.5 Gate - Collector Charge 10 Unit nC t d(on) Turn - on delay time 0.6 0.9 1.35 Rise time tr t d(off) Turn - off delay time 1.6 3.7 2.8 6 4 8.3 µs Conditions Fig I C = 10A, VCE=12V, VGE=5V 7 I C = 10A, VCE=12V, VGE=5V I C = 10A, VCE=12V, VGE=5V 15 VGE=5V, RG=1K ohm, L=1mH, VCE=14V 12 VGE=5V, RG=1K ohm, L=1mH, VCE=14V VGE=5V, RG=1K ohm, L=1mH, VCE=300V 14 C ies Input Capacitance 550 825 C oes C res Output Capacitance 100 150 VGE=0V, VCE=25V, f=1M H z Reverse Transfer Capacitance 12 18 IL Self-Clamped 15.5 L=2.2m H, TC=25°C 9 Inductive Switching Current 11.5 L=4.7m H, TC=25°C 10 16.5 L=1.5m H, TC=150°C 13 7.5 L=4.7m H, TC=150°C L=8.7m H, TC=150°C 14 pF 25 VGE=0V, VCE=25V, f=1M H z VGE=0V, VCE=25V, f=1M H z 6 L=0.7m H, TC=25°C A 6 o TJ =150 C, t SC Short Circuit Withstand Time 120 µs VCC = 16V, L = 10µH 14 R G = 1K ohm, VGE = 5V www.irf.com Page 2 11/19/04 IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Ignition IGBT Fig.1 - Typ. Output Characteristics TJ=25°C Fig.2 - Typ. Output Characteristics TJ=125°C 60 60 VGE = 10 V VGE = 5.0V VGE = 4.5V VGE = 4.0V VGE = 3.7V 50 50 40 IC (A) 40 30 I C (A) VGE = 10 V VGE = 5.0V VGE = 4.5V VGE = 4.0V VGE = 3.7V 30 20 20 10 10 0 0 0 1 2 3 4 5 6 0 1 VCE (V) 3 4 5 6 VCE (V) Fig.3 - Transfer Characteristics VCE=20V; tp=20µs Fig.4 - Typical VCE vs TJ VGE=4.5V 100 1.6 TJ = 25°C TJ = 125°C 90 1.5 80 I C = 10A 70 1.4 60 V CE (V ) I CE (A ) 2 50 40 1.3 1.2 30 20 1.1 I C = 7A 10 1.0 0 0 2 4 6 8 -50 10 50 100 150 200 TJ (°C) VGE (V) www.irf.com 0 Page 3 11/19/04 IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Ignition IGBT Fig.6 - Typ. Capacitance vs VCE VGE=0V; VCE=25V; f=1MHz Fig.5 - Typical VGE(th) vs TJ IC=1mA 1000 2.2 C ies Capacitance (pF) 2.0 V GE(t h) ( V ) 1.8 1.6 1.4 100 C oes 10 C res 1.2 1.0 1 -50 0 50 100 150 200 1 10 TJ (°C) VCE (V) Fig.7 - Typ. Gate Charge vs V GE I C=10A; VCE=12V; VGE =5V Fig.8 - Typical VCE vs VGE 20 5.5 5.0 18 4.5 16 4.0 14 V CE (V ) 3.5 V GE (V ) 100 3.0 2.5 12 10 I C= 7A; 125°C I C = 7A; 25°C IC=10A; 125°C I C=10A; 25°C 8 2.0 6 1.5 1.0 4 0.5 2 0.0 0 0 5 10 15 20 25 30 2.5 3.5 4 VGE (V) QG, Total Gate Charge (nC) www.irf.com 3 Page 4 11/19/04 4.5 IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Ignition IGBT Fig.10 - Self-clamp Avalance Current vs Inductance @ 150°C Fig.9 - Self-clamp Avalance Current vs Inductance @ 25°C 20 Open -seco ndary Cu rren t (A) Open-secondary Current (A) 40 35 30 Typical 25 20 15 Minimum 10 18 16 14 12 Typical 10 8 Minimum 6 4 0 1 2 3 4 5 0 Inductance (mH) 2 4 6 8 Inductance (mH) 10 Fig.11 - Transient Thermal Impedance, Junction-to-Case Thermal Response(Z thJC) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.02 0.01 0.01 0.00001 t1 0.05 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) www.irf.com Page 5 11/19/04 Ignition IGBT IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Fig.12 - Switching Waveform for Time Measurement VGE= 5V; RG= 1KΩ; L= 1mH; VCE= 14V; used circuit in Fig.14 450 8 VClamp 400 7 V 6 300 5 Vcl (measured) 250 4 200 3 VGE 150 2 100 VGE (V) clamp (V) 350 1 t d (o f f ) 50 0 0 -1 tr -50 -14 -10 -6 -2 -2 2 6 10 14 t (µs) Fig.13 - Self-clamped Inductive Switching Waveform L=4.7mH; TC=25°C; used circuit in Fig.14 12 V clamp CE 400 8 300 6 200 4 100 2 0 0 -2.E-05 -1.E-05 0.E+00 1.E-05 2.E-05 3.E-05 4.E-05 5.E-05 V clamp (V ) I I CE (A) 10 500 -100 6.E-05 time www.irf.com Page 6 11/19/04 Ignition IGBT IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Fig.14 - Test Circuit 0.47 Ω L 1KΩ D.U.T. Ice Fig.15 - Gate Charge Circuit L VC C DUT 0 1K www.irf.com Page 7 11/19/04 Ignition IGBT D2Pak Package Outline IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T H E AS S E MB L Y L INE "L " INT E R NAT IONAL R E CT IF IE R L OGO Note: "P " in as s embly line pos ition indicates "L ead-F ree" P AR T NU MB E R F 530S AS S E MB L Y L OT CODE DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L OR INT E R N AT ION AL R E CT IF IE R L OGO P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD -F R E E P R ODU CT (OP T ION AL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E COD E AS S E MB L Y L OT CODE www.irf.com Page 8 11/19/04 Ignition IGBT IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPL E : T H IS IS AN IR L 3103L L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO Note: "P" in as s embly line pos ition indicates "L ead-F ree" AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE www.irf.com Page 9 P AR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OPT IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE 11/19/04 Ignition IGBT IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE www.irf.com Page 10 PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 11/19/04 IRGS14C40LPbF IRGSL14C40LPbF IRGB14C40LPbF Ignition IGBT D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/04 www.irf.com Page 11 11/19/04 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/