PD- 95023C
IRF7811WPbF
HEXFET® Power MOSFET for DC-DC Converters
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•
•
•
•
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N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
100% Tested for Rg
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811WPbF has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811WPbF offers particulary low RDS(on) and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
T o p V ie w
DEVICE CHARACTERISTICS
IRF7811WPbF
RDS(on)
9.0mΩ
QG
22nC
Qsw
10.1nC
Qoss
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TL = 90°C
Pulsed Drain Current
Power Dissipation
TA = 25°C
Symbol
IRF7811WPbF
VDS
30
VGS
±12
ID
14
IDM
109
13
PD
TL = 90°C
3.1
Units
V
A
W
3.0
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
3.8
A
Pulsed Source Current
ISM
109
Parameter
Maximum Junction-to-Ambient
RθJA
Max.
40
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
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01/06/09
IRF7811WPbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Drain-Source Leakage
Current
IDSS
Min
Typ
Max
Units
30
–
–
V
9.0
12
mΩ
1.0
V
30
Current*
150
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 15A
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
µA
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current
IGSS
±100
Total Gate Chg Cont FET
QG
22
Total Gate Chg Sync FET
QG
16.3
VGS = 5V, VDS< 100mV
Pre-Vth
Gate-Source Charge
QGS1
3.5
VDS = 16V, ID = 15A, VGS = 5.0V
Post-Vth
Gate-Source Charge
QGS2
1.2
Gate to Drain Charge
QGD
8.8
Switch Chg(Qgs2 + Qgd)
Qsw
10.1
Output Charge
Qoss
12
Gate Resistance
RG
2.0
Turn-on Delay Time
td (on)
11
nA
33
VGS = ±12V
VGS=5.0V, ID=15A, VDS=16V
nC
VDS = 16V, VGS = 0
4.0
Ω
VDD = 16V, ID = 15A
Rise Time
tr
11
Turn-off Delay Time
td (off)
29
ns
Fall Time
tf
9.9
Input Capacitance
Ciss
–
2335
–
Output Capacitance
Coss
–
400
–
Reverse Transfer Capacitance Crss
–
119
–
Typ
Max
Units
1.25
V
VGS = 5.0V
Clamped Inductive Load
pF
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min
Diode Forward
Voltage*
VSD
Reverse Recovery
Charge
Qrr
Reverse Recovery
Charge (with Parallel
Schottky)
Qrr(s)
Notes:
45
nC
Conditions
IS = 15A, VGS = 0V
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
41
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS
measured at VGS = 5.0V, IF = 15A.
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IRF7811WPbF
6.0
ID = 15A
VGS, Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
ID= 15A
VDS = 16V
4.0
2.0
0.0
80 100 120 140 160
0
TJ , Junction Temperature ( °C)
8
12
16
20
24
QG, Total Gate Charge (nC)
Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.020
4000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
C, Capacitance(pF)
RDS(on) , Drain-to -Source On Resistance (Ω)
4
0.015
ID = 15A
0.010
Ciss
2000
1000
Coss
0.005
Crss
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGS, Gate -to -Source Voltage (V)
Fig 3. On-Resistance Vs. Gate Voltage
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7.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3
IRF7811WPbF
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = 15V
20µs PULSE WIDTH
0.1
2.5
3.0
3.5
4.0
4.5
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.4
5.0
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
VGS , Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
1
0.02
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7811WPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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