IRF7342PbF
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS
RDS(on) max.
The SO-8 has been modified through a customized lead frame for
enhanced thermal characteristics and multiple-die capability making it
ideal in a variety of power applications. With these improvements,
multiple devices can be used in an application with dramatically
reduced board space. The package is designed for vapor phase, infra
red, or wave soldering techniques. Power dissipation of greater than
0.8W is possible in a typical PCB mount application.
Base part number
Package Type
IRF7342PbF
SO-8
Absolute Maximum Ratings
Symbol
0.105
-3.4A
ID
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
-55V
SO-8
IRF7342PbF
G
Gate
Standard Pack
Form
Quantity
Tape and Reel
4000
D
Drain
S
Source
Orderable Part Number
IRF7342PbF
Max.
Units
VDS
Drain-Source Voltage
-55
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.4
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
-2.7
-27
2.0
PD @TA = 70°C
Maximum Power Dissipation
Linear De rating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp < 10µs
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
VGS
VGSM
EAS
dv/dt
TJ
TSTG
Thermal Resistance
Symbol
RJA
1
Parameter
Parameter
Junction-to-Ambient
A
1.3
0.016
± 20
30
114
5.0
-55 to + 150
W
mW°/C
V
mJ
V/ns
°C
Typ.
Max.
Units
–––
62.5
°C/W
2016-5-26
IRF7342PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Qrr
Min. Typ. Max. Units
Conditions
-55
––– –––
V VGS = 0V, ID = -250µA
––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.095 0.105
VGS = -10V, ID = -3.4A
––– 0.150 0.170
VGS = -4.5V, ID = -2.7A
-1.0 ––– –––
V VDS = VGS, ID = -250µA
3.3
––– –––
S VDS = -10V, ID = -3.1A
––– ––– -2.0
VDS = -55V, VGS = 0V
µA
––– ––– -25
VDS = -55V,VGS = 0V,TJ =55°C
––– ––– -100
VGS = -20V
nA
––– –––
100
VGS = 20V
–––
26
38
ID = -3.1A
–––
3.0
4.5
nC VDS = -44V
VGS = -10V, See Fig.10
–––
8.4
13
–––
14
22
VDD = -28V
–––
10
15
ID = -1.0A
ns
–––
43
64
RG = 6.0
–––
22
32
RD = 16
––– 690 –––
VGS = 0V
pF VDS = -25V
––– 210 –––
ƒ = 1.0MHz, See Fig.9
–––
86
–––
Min.
Typ. Max. Units
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = -2.0A,VGS = 0V
ns TJ = 25°C ,IF = -2.0A,
nC di/dt = 100A/µs
–––
–––
-2.0
–––
–––
-27
–––
–––
–––
–––
54
85
-1.2
80
130
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8)
ISD -3.4A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" square copper board , t 10sec.
2
2016-5-26
IRF7342PbF
100
VGS
TOP
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
BOTTOM -3.0V
10
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
BOTTOM -3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
-3.0V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-3.0V
1
0.1
0.1
100
100
100
-ISD , Reverse Drain Current (A)
100
-I D , Drain-to-Source Current (A)
10
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
TJ = 25 °C
TJ = 150 °C
10
V DS = -25V
20µs PULSE WIDTH
3
4
5
6
-VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
TJ = 150 °C
7
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
1.4
-VSD ,Source-to-Drain Voltage (V)
Fig. 4 Typical Source-Drain Diode
Forward Voltage
2016-5-26
IRF7342PbF
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = -3.4 A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
R DS (on), Drain-to-Source On Resistance
0.240
0.200
VGS = -4.5V
0.160
0.120
VGS = -10V
0.080
0
2
4
6
8
10
12
-I D , Drain Current (A)
TJ , Junction Temperature( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
0.45
EAS , Single Pulse Avalanche Energy (mJ)
300
0.35
0.25
I D = -3.4 A
0.15
0.05
2
5
8
11
14
A
ID
-1.5A
-2.7A
BOTTOM -3.4A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting T J, Junction Temperature
150
( °C)
-V GS , Gate-to-Source Voltage (V)
Fig. 7 Typical On-Resistance Vs. Gate Voltage
4
Fig 8. Maximum Avalanche Energy
2016-5-26
IRF7342PbF
1200
-VGS , Gate-to-Source Voltage (V)
960
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
720
480
Coss
240
Crss
0
1
10
VDS =-48V
VDS =-30V
VDS =-12V
16
12
8
4
0
100
ID = -3.1A
0
10
20
30
40
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x ZthJA + TA
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig. 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
2016-5-26
IRF7342PbF
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
D
D IM
B
8
6
7
6
M IN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B ASIC
1.27 B ASIC
e1
5
H
E
1
6X
2
3
0.25 [ .010]
4
A
e
e1
0.25 [ .010]
A1
C
A
M AX
.025 B ASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
M ILLIM ETERS
M AX
5
A
IN C H ES
M IN
y
0.10 [ .004]
8X L
8X c
7
B
F O O T P R IN T
N O TE S :
1.
D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2.
C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3.
D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4.
O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
6
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
7
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .
8 X 0 .7 2 [ .0 2 8 ]
6 .4 6 [ .2 5 5 ]
3 X 1 .2 7 [ .0 5 0 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking Information
E X A M P L E : T H IS IS A N IR F 7 1 0 1 (M O S F E T )
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
XXXX
F7101
D A T E C O D E (Y W W )
P = D E S IG N A T E S L E A D -F R E E
P R O D U C T (O P T IO N A L )
Y = L A S T D IG IT O F T H E Y E A R
W W = W EEK
A = A S S E M B L Y S IT E C O D E
LO T C O D E
PART N U M BER
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
6
2016-5-26
IRF7342PbF
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
7
2016-5-26
IRF7342PbF
Qualification Information†
Consumer
Qualification Level
Moisture Sensitivity Level
MSL1
(per JEDEC J-STD-020D)††
SO-8
Yes
RoHS Compliant
† Qualification standards can be found at Infineon’s web site www.infineon.com
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
05/26/2016
Comments
Updated datasheet with corporate template
Added disclaimer on last page.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™,
Op MOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO‐SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respec ve owners.
Edi on 2016‐04‐19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a ques on about this
document?
Email: erratum@infineon.com
Document reference
ifx1
8
IMPORTANT NOTICE
The informa on given in this document shall in no
event be regarded as a guarantee of condi ons or
characteris cs (“Beschaffenheitsgaran e”) .
With respect to any examples, hints or any typical
values stated herein and/or any informa on
regarding the applica on of the product, Infineon
Technologies hereby disclaims any and all
warran es and liabili es of any kind, including
without limita on warran es of non‐infringement
of intellectual property rights of any third party.
In addi on, any informa on given in this document
is subject to customer’s compliance with its
obliga ons stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applica ons.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended applica on and the completeness of the
product informa on given in this document with
respect to such applica on.
For further informa on on the product, technology,
delivery terms and condi ons and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automo ve Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For informa on on
the types in ques on please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a wri en document signed by
authorized representa ves of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applica ons where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
2016-5-26
