AIDK10S65C5

AIDK10S65C5 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) Features             Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Junction Temperature range from -40°C to 175°C System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Potential Applications    Traction inverter Booster / DCDC Converter On board Charger / PFC Product Validation “Qualified for Automotive Applications. Product Validation according to AEC-Q100/101” Description The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermal characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in the 650V voltage class. Product Information Parameter Value/Unit Pin Definition Ordering Code AIDK10S65C5 VDC,max 650 V Pin 1,case Cathode Marking AD1065C5 IF; TC< 124 °C 10 A Pin 2 Anode Package PG-TO263-2-1 QC; VR= 400 V 15 nC SP Number SP001725150 EC; VR= 400 V 3.5 μJ Tj,max Datasheet www.infineon.com 175 °C Please read the Important Notice and Warnings at the end of this document Page 1 of 11 V3.0 11.06.2019 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) Table of Contents Table of Contents Features…………………………………………………………………………………………………………..………..………..… 1 1 Potential Applications………………………………………………………………………………………..……………………… 1 Product Validation………………………………………………..…………………………………………………………………… Description……………………………………………..……………………………………………………………………………… 1 Table of Contents……………………………………………..……………………………………………………………………… 2 1 Maximum Ratings…………………………………………..…………………………………………………………………… 3 2 Thermal Characteristics………………………………………..……………………………………………………………… 4 3 Electrical Characteristics……………………………………………..………………………………………………………… 5 4 6 Electrical Characteristics Diagrams…………………………………………..……………………………………………… 5 9 Package Outlines………………………………………………………………………..……………………………………… Revision History………………………………………………………………………..……………………………………………… 10 Datasheet Page 2 of 11 V3.0 11.06.2019 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) Maximum Ratings 1 Maximum Ratings Table 1 Maximum ratings 1 Parameter Repetitive peak reverse voltage Continuous forward current for RthJC,max TC = 124 °C, D=1 Surge non-repetitive forward current, sine halfwave TC= 25°C, tp=10ms Symbol Value Unit VRRM 650 V IF 10 A IF,SM 42 A TC= 150°C, tp=10ms 33 Non-repetitive peak forward current TC= 25°C, tp=10μs i²t value TC= 25°C, tp=10ms IF,max 431 A ∫i2 dt 9 A2s TC= 150°C, tp=10ms 5 Diode dv/dt ruggedness VR=0...480V dv/dt 100 V/ns Ptot 53 W Tj -40…175 °C Tstg -55…150 °C Human body model, R= 1.5 kΩ, C = 100 pF 8 kV Charged device model 2 Power dissipation TC = 25°C Operating temperature Storage temperature ESD Datasheet Page 3 of 11 V3.0 11.06.2019 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) Thermal Characteristics 2 Thermal Characteristics Table 2 Thermal Characteristics 1 Values Parameter Symbol Unit Note/Test condition Min. Typ. Max. Thermal resistance, junction–case2 Thermal resistance, junction-ambient Datasheet 2 RthJC - 2.2 2.9 K/W RthJA - - 62 K/W Page 4 of 11 V3.0 11.06.2019 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) Electrical Characteristics 3 Electrical Characteristics Table 3 Static Characteristics Values Parameter Symbol Unit Note/Test condition Min. Typ. Max. DC blocking voltage VDC Diode forward voltage3 VF Reverse current IR Table 4 650 - - - 1.5 1.7 - 1.8 2.1 - 2 60 - 12 - Tj = 25°C, IR = 0.06 mA V Tj = 25°C, IF = 10 A Tj = 150°C, IF = 10 A µA VR = 650 V, Tj = 25 °C VR = 650 V, Tj = 150 °C Dynamic Characteristics at Tj=25°C unless noted otherwise Values Parameter Symbol Unit Note/Test condition Min. Typ. Max. Total capacitive charge Total capacitance QC C nC VR = 400 V, di/dt = 200 A/µs, IF ≤ IF,MAX, Tj = 150 °C - 15 - - 303 - - 40 - pF VR = 300 V, f = 1 MHz - 39 - VR = 600 V, f = 1 MHz VR = 1 V, f = 1 MHz Footnotes: 1 2 3 The parameter is not subject to production test- verified by design/characterization. Rth,JC defined as per JESD-51-14. Rth,JA defined as per JESD-51-5/7. Only the value at 25°C is subject to production test. The value at 150°C is only verified by design/characterization. Datasheet Page 5 of 11 V3.0 11.06.2019 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) Electrical Characteristics Diagrams 4 Electrical Characteristics Diagrams Figure 1 (LEFT) Power dissipation; P tot= f(TC); RthJC,max (RIGHT) Diode forward current; I F= f(TC); Tj≤ 175 °C; RthJC,max; parameter: D=duty cycle Figure 2 Datasheet (LEFT) Typical forward characteristic; I F= f(VF); tP=20 μs; parameter:Tj (RIGHT) Typical forward characteristics in surge current; I F= f(VF); tP=20 μs; parameter:Tj Page 6 of 11 V3.0 11.06.2019 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) Electrical Characteristics Diagrams Figure 3 (LEFT) Typical capacitive charge versus current slope (only capacitive charge, guaranteed by design); QC= f(diF/dt); Tj=150°C; VR=400V; IF ≤ IF,max (RIGHT) Typical reverse current versus reverse voltage; I R= f(VR);parameter: Tj i ri [K/W] 1 7.41E-01 2 3.00E-01 3 8.08E-01 4 3.50E-01 Ti [s] 6.80E-04 1.00E-03 4.19E-03 3.14E-02 Figure 4 Datasheet (LEFT) Max. Transient thermal impedance; Z thJC= f(tP); parameter:D=tP/T (RIGHT) Typ. Capacitance vs. Reverse voltage; C= f(V R); Tj=25°C; f=1 MHz Page 7 of 11 V3.0 11.06.2019 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) Electrical Characteristics Diagrams Figure 5 Figure 6 Typical capacitance stored energy; E C= f(VR) -9.2E-04 [V/°C] B= 1.0E+00 [V] C= 1.3E-06 [Ω/(°C)2] D= 7.3E-05 [Ω/°C] E= 4.1E-02 [Ω] Simplified forward characteristics model V F= f(IF); -40°C < Tj