AIKP20N60CTAKSA1

AIKP20N60CT TRENCHSTOPTMSeries LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryanti-parallelEmitterControlleddiode  Features: C •AutomotiveAECQ101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature150°C •Dynamicallystresstested •Shortcircuitwithstandtime5µs •PositivetemperaturecoefficientinVCE(sat) •LowEMI •LowGateCharge •GreenPackage •TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed G E C Applications: G •Maininverter •Climatecompressor •PTCheater •Motordrives C E KeyPerformanceandPackageParameters Type AIKP20N60CT Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 20A 1.5V 150°C AK20DCT PG-TO220-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries MaximumRatings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 40.0 20.0 A ICpuls 60.0 A TurnoffsafeoperatingareaVCE≤600V,Tvj≤150°C - 60.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 40.0 20.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 156.0 W Operating junction temperature Tvj -40...+150 °C Storage temperature Tstg -40...+150 °C Pulsedcollectorcurrent,tplimitedbyTvjmax 1) µs 5 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.90 K/W Diode thermal resistance, junction - case Rth(j-c) - - 1.50 K/W Thermal resistance junction - ambient Rth(j-a) - - 62 K/W 1) tp≤1µs Datasheet 3 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=20.0A Tvj=25°C Tvj=150°C - 1.50 1.85 2.05 - V - 1.65 1.65 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25°C Tvj=150°C Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=150°C - 550 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=20.0A - 11.0 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1100 - - 71 - - 32 - VCC=480V,IC=20.0A, VGE=15V - 120.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz 183 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 14 - ns - 199 - ns - 42 - ns - 0.31 - mJ - 0.46 - mJ - 0.77 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=131nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=20.0A, diF/dt=880A/µs dirr/dt - 41 - ns - 0.31 - µC - 13.3 - A - 711 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 17 - ns - 217 - ns - 70 - ns - 0.47 - mJ - 0.60 - mJ - 1.07 - mJ - 201 - ns - 1.28 - µC - 16.6 - A - 481 - A/µs IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=131nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=150°C, VR=400V, IF=20.0A, diF/dt=800A/µs dirr/dt 5 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries 140 30 25 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 120 100 80 60 40 20 15 10 5 20 0 25 50 75 100 125 0 150 25 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tj≤150°C) 100 125 150 60 50 VGE=20V VGE=20V 17V 17V 50 15V 13V 11V 40 9V 7V 30 20 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 75 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤150°C) 60 11V 40 9V 7V 30 20 10 0 50 TC,CASETEMPERATURE[°C] 10 0 1 2 3 0 4 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tj=25°C) Datasheet 0 1 2 3 4 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=150°C) 6 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries 40 3.0 Tj=25°C Tj=150°C VCE(sat),COLLECTOR-EMITTERSATURATION[A] IC,COLLECTORCURRENT[A] 35 30 25 20 15 10 5 0 IC=10A IC=20A IC=40A 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 0.0 10 0 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=10V) 150 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 100 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 50 Tj,JUNCTIONTEMPERATURE[°C] 0 5 10 15 20 25 30 35 100 10 40 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,RG=12Ω,Dynamictestcircuitin Figure E) Datasheet 0 10 20 30 40 50 60 70 RG,GATERESISTOR[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 7 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries 1000 7 typ. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 6 5 4 3 2 1 0 -50 150 Tj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) 100 150 2.4 2.0 2.0 Eoff Eon* Ets* E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 50 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.29mA) 2.4 1.6 1.2 0.8 Eoff Eon* Ets* 1.6 1.2 0.8 0.4 0.0 0 Tj,JUNCTIONTEMPERATURE[°C] 0.4 0 5 10 15 20 25 30 35 0.0 40 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,RG=12Ω,Dynamictestcircuitin Figure E) Datasheet 0 10 20 30 40 50 60 70 RG,GATERESISTOR[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 8 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries 1.2 1.6 1.4 Eoff Eon* Ets* E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.0 0.8 0.6 0.4 Eoff Eon* Ets* 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0.0 25 50 75 100 125 0.0 300 150 Tj,JUNCTIONTEMPERATURE[°C] 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=150°C,VGE=15/0V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) 20 Ciss Coss Crss 1000 15 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 120V 480V 10 100 5 0 0 25 50 75 100 125 10 150 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=20A) Datasheet 0 10 20 30 40 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries 12 300 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 350 250 200 150 100 50 0 12 14 16 18 10 8 6 4 2 0 20 10 VGE,GATE-EMITTERVOLTAGE[V] 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,Tj≤150°C) Figure 18. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTj=25°C,Tjmax≤150°C) 1 ZthJC,TRANSIENTTHERMALRESISTANCE[K/W] ZthJC,TRANSIENTTHERMALRESISTANCE[K/W] 1 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 0.01 i: 1 2 3 4 ri[K/W]: 0.07041 0.30709 0.3199 0.18715 τi[s]: 9.6E-5 6.8E-4 0.0108462 0.0692548 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.33997 0.44456 0.58146 0.13483 τi[s]: 1.3E-4 1.5E-3 0.0182142 0.0920745 1 0.001 1E-7 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalresistanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) Datasheet 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 10 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries 300 1.6 Tj=25°C, IF = 20A Tj=150°C, IF = 20A Tj=25°C, IF = 20A Tj=150°C, IF = 20A 1.4 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 250 200 150 100 50 1.2 1.0 0.8 0.6 0.4 0.2 0 600 900 1200 0.0 600 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Tj=25°C, IF = 20A Tj=150°C, IF = 20A -150 20 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 1500 0 Tj=25°C, IF = 20A Tj=150°C, IF = 20A 15 10 5 -300 -450 -600 -750 900 1200 1500 -900 600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Datasheet 1200 Figure 22. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 25 0 600 900 diF/dt,DIODECURRENTSLOPE[A/µs] 900 1200 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) 11 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries 60 2.5 Tj=25°C Tj=150°C IC=10A IC=20A IC=40A 2.0 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 50 40 30 20 1.0 0.5 10 0 1.5 0.0 0.5 1.0 1.5 2.0 0.0 2.5 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 0 50 100 150 Tj,JUNCTIONTEMPERATURE[°C] Figure 26. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries Package Drawing PG-TO220-3 Datasheet 13 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.1 2017-02-09 AIKP20N60CT TRENCHSTOPTMSeries RevisionHistory AIKP20N60CT Revision:2017-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-02-09 Data sheet created Datasheet 15 V2.1 2017-02-09 TrademarksofInfineonTechnologiesAG µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™, CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™, EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™, HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™, ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™, PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™, StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™  TrademarksupdatedNovember2015  OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2017. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. 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