AIKQ120N60CTXKSA1

厂商：
EUPEC(英飞凌)
封装：
TO-247-3
描述：

数据手册：

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数据手册
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AIKQ120N60CTXKSA1 数据手册

AIKQ120N60CT TRENCHSTOPTMSeries LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryantiparallelEmitterControlleddiode Features: C •AutomotiveAEC-Q101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •Maximumjunctiontemperature175°C •Dynamicallystresstested •Shortcircuitwithstandtime5µs •100%shortcircuittested •100%ofthepartsaredynamicallytested •PositivetemperaturecoefficientinVCE(sat) •LowEMI •LowgatechargeQG •Greenpackage •Verysoft,fastrecoveryantiparallelEmitterControlledHE diode •TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed G E Applications: •Maininverter •Climatecompressor •PTCheater •Motordrives KeyPerformanceandPackageParameters Type AIKQ120N60CT Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 120A 1.5V 175°C AK120DCT PG-TO247-3-46 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries MaximumRatings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=135°C IC 160.0 120.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 480.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 480.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=124°C IF 160.0 120.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 480.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 833.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 1) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,2) junction - case Rth(j-c) - - 0.18 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 0.30 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) 2) Package not recommended for surface mount application Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. Datasheet 3 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=120.0A Tvj=25°C Tvj=175°C - 1.50 1.90 2.00 - V - 1.65 1.60 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=120.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=1.90mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - 3000 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=120.0A - 75.0 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 7530 - - 446 - - 206 - VCC=480V,IC=120.0A, VGE=15V - 772.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz 846 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 33 - ns - 43 - ns - 310 - ns - 33 - ns - 4.10 - mJ - 2.80 - mJ - 6.90 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=400V,IC=120.0A, VGE=0.0/15.0V, RG(on)=3.0Ω,RG(off)=3.0Ω, Lσ=63nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=120.0A, diF/dt=1100A/µs dirr/dt - 280 - ns - 3.50 - µC - 25.0 - A - -500 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 33 - ns - 51 - ns - 355 - ns - 43 - ns - 6.70 - mJ - 4.10 - mJ - 10.80 - mJ - 410 - ns - 10.80 - µC - 45.0 - A - -520 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=120.0A, VGE=0.0/15.0V, RG(on)=3.0Ω,RG(off)=3.0Ω, Lσ=63nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=120.0A, diF/dt=1000A/µs dirr/dt 5 V2.1 2017-02-09 AIKQ120N60CT 900 180 800 160 700 140 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] TRENCHSTOPTMSeries 600 500 400 300 120 100 80 60 200 40 100 20 0 25 50 75 100 125 150 0 175 25 50 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tj≤175°C) 125 150 175 360 VGE=20V 320 VGE=20V 320 15V 15V 13V 280 13V 280 11V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 360 9V 240 8V 200 7V 6V 160 120 200 1.5 2.0 2.5 3.0 3.5 0 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tj=25°C) Datasheet 6V 120 40 1.0 7V 160 40 0.5 9V 8V 80 0.0 11V 240 80 0 75 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=175°C) 6 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries 360 3.0 Tj=25°C Tj=175°C VCE(sat),COLLECTOR-EMITTERSATURATION[A] 320 IC,COLLECTORCURRENT[A] 280 240 200 160 120 80 40 0 0 2 4 6 8 10 12 IC=38A IC=75A IC=120A IC=150A 2.5 2.0 1.5 1.0 0.5 0.0 14 0 VGE,GATE-EMITTERVOLTAGE[V] 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 5. Typicaltransfercharacteristic (VCE=20V) Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 1E+4 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 0 25 50 75 100 125 150 175 1000 100 10 200 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,rG=3Ω,Dynamictestcircuitin Figure E) Datasheet 0 5 10 15 20 25 rG,GATERESISTOR[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,IC=120A,Dynamictestcircuitin Figure E) 7 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries 1000 8 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 150 typ. min. max. 7 6 5 4 3 2 1 0 175 0 Tj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 Tj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=120A,rG=3Ω,DynamictestcircuitinFigure E) Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1,9mA) 30 40 Eoff Eon Ets Eoff Eon Ets 35 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 25 20 15 10 30 25 20 15 10 5 5 0 0 40 80 120 160 200 0 240 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,rG=3Ω,Dynamictestcircuitin Figure E) Datasheet 0 5 10 15 20 25 rG,GATERESISTOR[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=175°C,VCE=400V, VGE=15/0V,IC=120A,Dynamictestcircuitin Figure E) 8 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries 16 16 Eoff Eon Ets 14 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 14 12 10 8 6 4 12 10 8 6 4 2 0 Eoff Eon Ets 2 25 50 75 100 125 150 0 200 175 Tj,JUNCTIONTEMPERATURE[°C] 300 400 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=120A,rG=3Ω,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=175°C,VGE=15/0V, IC=120A,RG=3Ω,Dynamictestcircuitin Figure E) 16 120V 480V Cies Coes Cres 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 1E+4 10 8 6 1000 100 4 2 0 0 100 200 300 400 500 600 700 10 800 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=120A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries 12 1400 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 1600 1200 1000 800 600 400 10 8 6 4 2 200 0 12 14 16 18 0 20 10 VGE,GATE-EMITTERVOLTAGE[V] 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1E-5 1E-4 0.001 0.01 0.1 14 15 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.05464681 0.08604638 0.1607048 4.1E-3 τi[s]: 2.1E-4 2.6E-3 0.01504089 0.2133931 1 0.001 1E-6 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) Datasheet 13 0.1 i: 1 2 3 4 ri[K/W]: 0.02686799 0.0369369 0.1151423 3.0E-3 τi[s]: 2.1E-4 1.6E-3 0.01573455 0.2126417 0.001 1E-6 12 Figure 18. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTj=25°C,Tjmax≤150°C) ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Figure 17. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj≤150°C) 0.01 11 VGE,GATE-EMITTERVOLTAGE[V] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 10 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries 800 12 Tj=25°C, IF = 120A Tj=175°C, IF = 120A 10 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 700 600 500 400 300 200 Tj=25°C, IF = 120A Tj=175°C, IF = 120A 8 6 4 2 100 0 500 700 900 1100 1300 0 500 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 1300 1500 Tj=25°C, IF = 120A Tj=175°C, IF = 120A 60 -200 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 1100 0 Tj=25°C, IF = 120A Tj=175°C, IF = 120A 50 40 30 20 -400 -600 -800 -1000 10 700 900 1100 1300 1500 -1200 500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Datasheet 900 Figure 22. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 70 0 500 700 diF/dt,DIODECURRENTSLOPE[A/µs] 700 900 1100 1300 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) 11 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries 360 4.0 Tj=25°C Tj=175°C IF=38A IF=75A IF=120A IF=150A 3.5 300 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 3.0 240 180 120 2.5 2.0 1.5 1.0 60 0.5 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 26. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries Package Drawing PG-TO247-3-46 DIM A A1 A2 b b1 b2 MIN 4.90 2.31 1.90 1.16 1.96 1.96 MILLIMETERS MAX 5.10 2.51 2.10 1.26 2.25 2.06 INCHES MIN 0.193 0.091 0.075 0.046 0.077 0.077 MAX 0.201 0.099 0.083 0.050 0.089 0.081 DOCUMENT NO. Z8B00174295 SCALE 0 c D D1 D2 D3 E E1 E3 e N L L1 R Datasheet 0.66 21.10 16.85 1.35 0.78 15.90 13.50 1.55 0.59 20.90 16.25 1.05 0.58 15.70 13.10 1.35 0.026 0.831 0.663 0.053 0.031 0.626 0.531 0.061 0.023 0.823 0.640 0.041 0.023 0.618 0.516 0.053 0.214 (BSC) 5.44 (BSC) 19.80 1.90 20.10 4.30 2.10 0.780 0.075 13 5 5 7.5mm EUROPEAN PROJECTION ISSUE DATE 13-08-2014 3 3 0 0.791 0.169 0.083 REVISION 01 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.1 2017-02-09 AIKQ120N60CT TRENCHSTOPTMSeries RevisionHistory AIKQ120N60CT Revision:2017-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-02-09 Data sheet created Datasheet 15 V2.1 2017-02-09 TrademarksofInfineonTechnologiesAG µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™, CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™, EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™, HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™, ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™, PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™, StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™ TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2017. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.

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