AIKQ120N75CP2XKSA1

AIKQ120N75CP2 EDT2 IGBT EDT2 IGBT and emitter controlled diode in TO247PLUS package TO-247PLUS – 3Pin Features • • • • • • • • • • • • • • • • VCE = 750 V IC = 120 A 750 V collector-emitter blocking voltage capability Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems Very low VCE(sat), 1.30 V at ICnom = 120 A, 25°C Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V Self limiting current under short circuit condition Positive thermal coefficient and very tight parameter distribution for easy paralleling Drop-in replacement for previous generation devices IC = 120 A, Tc = 100°C Excellent current sharing in parallel operation Smooth switching characteristics, low EMI signature Low gate charge QG Simple gate drive design Co-packed with fast soft recovery emitter controlled 3 diode TO247PLUS package with high creepage distance High reliability 2021-10-27 restricted Copyright © Infineon Te Potential applications • xEV traction inverter • DC-link discharge switch • Automotive aux-drives Product validation • Qualified for automotive applications • Qualified according to AEC-Q101 Description C G E Type Package Marking AIKQ120N75CP2 PG-TO247PLUS-3 AKQ12FCP Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2022-02-16 AIKQ120N75CP2 EDT2 IGBT Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.00 2022-02-16 AIKQ120N75CP2 EDT2 IGBT 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Internal emitter inductance measured 5 mm (0.197 in) from case LE Storage temperature Tstg Soldering temperature Thermal resistance, junction-ambient 2 Typ. Unit Max. 13.0 -55 wave soldering 1.6 mm (0.063 in.) from case for 10 s Rth(j-a) nH 150 °C 260 °C 40 K/W IGBT Table 2 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax Values Unit 750 V Tc = 25 °C 150 A Tc = 100 °C 120 VCE IC ICpulse Turn-off safe operating area 360 A 360 A ±20 V ±30 V 5 µs Tc = 25 °C 682 W Tc = 100 °C 341 VCE ≤ 750 V, tp = 1 µs, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE tp