AIKW20N60CTXKSA1

AIKW20N60CT TRENCHSTOPTMSeries LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryantiparallelEmitterControlleddiode  Features: C •AutomotiveAEC-Q101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •Maximumjunctiontemperature175°C •Dynamicallystresstested •Shortcircuitwithstandtime5µs •100%shortcircuittested •100%ofthepartsaredynamicallytested •PositivetemperaturecoefficientinVCE(sat) •LowEMI •LowgatechargeQG •Greenpackage •Verysoft,fastrecoveryantiparallelEmitterControlledHE diode •TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed G E G C Applications: E •Maininverter •Climatecompressor •PTCheater •Motordrives KeyPerformanceandPackageParameters Type AIKW20N60CT Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 20A 1.5V 175°C AK20DCT PG-TO247-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries MaximumRatings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 40.0 20.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 60.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IF 40.0 20.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 166.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 1) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,2) junction - case Rth(j-c) - - 0.90 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 1.50 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) 2) Package not recommended for surface mount application Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. Datasheet 3 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=20.0A Tvj=25°C Tvj=175°C - 1.50 1.90 2.05 - V - 1.65 1.60 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - 550 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=20.0A - 11.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1100 - - 71 - - 32 - VCC=480V,IC=20.0A, VGE=15V - 120.0 - nC VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz 183 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 14 - ns - 199 - ns - 42 - ns - 0.31 - mJ - 0.46 - mJ - 0.77 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=131nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=20.0A, diF/dt=880A/µs dirr/dt - 41 - ns - 0.31 - µC - 13.3 - A - -711 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 18 - ns - 223 - ns - 76 - ns - 0.51 - mJ - 0.64 - mJ - 1.15 - mJ - 176 - ns - 1.46 - µC - 18.9 - A - -467 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=131nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=20.0A, diF/dt=880A/µs dirr/dt 5 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries 180 35 160 30 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 140 120 100 80 60 25 20 15 10 40 5 20 0 25 50 75 100 125 150 0 175 25 50 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tj≤175°C) 125 150 175 60 VGE=20V VGE=20V 15V 15V 50 50 13V 11V 9V 40 7V 30 20 13V 11V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 60 9V 40 7V 30 20 10 0 75 TC,CASETEMPERATURE[°C] 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tj=25°C) Datasheet 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=175°C) 6 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries 40 3.0 Tvj = 25°C Tvj = 175°C VCE(sat),COLLECTOR-EMITTERSATURATION[V] IC,COLLECTORCURRENT[A] 35 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 IC = 10A IC = 20A IC = 40A 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 10 25 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=20V) 100 125 150 175 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 75 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 50 Tj,JUNCTIONTEMPERATURE[°C] 0 5 10 15 20 25 30 35 100 10 40 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,rG=12Ω,Dynamictestcircuitin Figure E) Datasheet 0 10 20 30 40 50 60 70 80 rG,GATERESISTOR[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,IC=20A,Dynamictestcircuitin Figure E) 7 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries 1000 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 150 typ. min. max. 6 5 4 3 2 1 0 175 25 Tj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=20A,rG=12Ω,Dynamictestcircuitin Figure E) 100 125 150 175 2.8 Eoff Eon Ets Eoff Eon Ets 2.4 E,SWITCHINGENERGYLOSSES[mJ] 2.40 E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,29mA) 2.80 2.00 1.60 1.20 0.80 2.0 1.6 1.2 0.8 0.40 0.00 50 Tj,JUNCTIONTEMPERATURE[°C] 0.4 0 5 10 15 20 25 30 35 0.0 40 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,rG=12Ω,Dynamictestcircuitin Figure E) Datasheet 0.0 12.5 25.0 37.5 50.0 62.5 75.0 rG,GATERESISTOR[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,IC=20A,Dynamictestcircuitin Figure E) 8 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries 1.2 2.00 Eoff Eon Ets Eoff Eon Ets 1.75 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.0 0.8 0.6 0.4 1.50 1.25 1.00 0.75 0.50 0.2 0.25 0.0 25 50 75 100 125 150 0.00 300 175 Tj,JUNCTIONTEMPERATURE[°C] 350 400 450 500 550 600 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=20A,rG=12Ω,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=175°C,VGE=0/15V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) 20 VCC=120V VCC=480V 18 Cies Coes Cres 1E+4 14 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 16 12 10 8 1000 6 100 4 2 0 0 20 40 60 80 100 120 140 10 160 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=20A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.1 2017-02-09 AIKW20N60CT 350 14 300 12 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] TRENCHSTOPTMSeries 250 200 150 100 50 0 12 13 14 15 16 17 18 19 10 8 6 4 2 0 20 10 VGE,GATE-EMITTERVOLTAGE[V] 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj≤150°C) Figure 18. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTj=25°C,Tjmax≤150°C) 1 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 0.01 i: 1 2 3 4 ri[K/W]: 0.07041 0.30709 0.3199 0.18715 τi[s]: 9.6E-5 6.8E-4 0.01085 0.06925 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.33997 0.44456 0.58146 0.13483 τi[s]: 1.3E-4 1.5E-3 0.01821 0.09207 1 0.001 1E-7 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) Datasheet 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 10 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries 300 2.0 Tvj = 25°C, IF = 20A Tvj = 175°C, IF = 20A Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 250 1.8 200 150 100 50 Tvj = 25°C, IF = 20A Tvj = 175°C, IF = 20A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 600 700 800 900 1000 1100 1200 1300 1400 1500 0.0 600 700 800 900 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) diF/dt,DIODECURRENTSLOPE[A/µs] Figure 22. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 30 0 -100 25 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tvj = 25°C, IF = 20A Tvj = 175°C, IF = 20A 20 15 10 5 Tvj = 25°C, IF = 20A Tvj = 175°C, IF = 20A -200 -300 -400 -500 -600 -700 -800 -900 0 600 700 800 900 1000 1100 1200 1300 1400 1500 -1000 600 700 800 900 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Datasheet diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) 11 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries 60 2.50 Tvj = 25°C Tvj = 175°C IF = 10A IF = 20A IF = 40A 2.25 50 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 2.00 40 30 20 1.75 1.50 1.25 1.00 10 0.75 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.50 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 26. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries Package Drawing PG-TO247-3 Datasheet 13 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.1 2017-02-09 AIKW20N60CT TRENCHSTOPTMSeries RevisionHistory AIKW20N60CT Revision:2017-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-02-09 Data sheet created Datasheet 15 V2.1 2017-02-09 TrademarksofInfineonTechnologiesAG µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™, CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™, EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™, HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™, ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™, PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™, StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™  TrademarksupdatedNovember2015  OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2017. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. 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