AIKW30N60CTXKSA1

AIKW30N60CT TRENCHSTOPTMSeries LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryantiparallelEmitterControlleddiode  Features: C •AutomotiveAEC-Q101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •Maximumjunctiontemperature175°C •Dynamicallystresstested •Shortcircuitwithstandtime5µs •100%shortcircuittested •100%ofthepartsaredynamicallytested •PositivetemperaturecoefficientinVCE(sat) •LowEMI •LowgatechargeQG •Greenpackage •Verysoft,fastrecoveryantiparallelEmitterControlledHE diode •TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed G E G C Applications: E •Maininverter •Climatecompressor •PTCheater •Motordrives KeyPerformanceandPackageParameters Type AIKW30N60CT Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 30A 1.5V 175°C AK30DCT PG-TO247-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries MaximumRatings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 60.0 30.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 90.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IF 60.0 30.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 187.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 1) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,2) junction - case Rth(j-c) - - 0.80 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 1.05 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) 2) Package not recommended for surface mount application Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. Datasheet 3 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=30.0A Tvj=25°C Tvj=175°C - 1.50 1.90 2.05 - V - 1.65 1.60 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.43mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - 750 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 16.7 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1630 - - 108 - - 50 - - 167.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=20.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - 275 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 23 - ns - 21 - ns - 254 - ns - 46 - ns - 0.69 - mJ - 0.77 - mJ - 1.46 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.6Ω,RG(off)=10.6Ω, Lσ=136nH,Cσ=39pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=30.0A, diF/dt=910A/µs dirr/dt - 85 - ns - 0.80 - µC - 16.0 - A - -630 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 24 - ns - 26 - ns - 292 - ns - 90 - ns - 1.00 - mJ - 1.10 - mJ - 2.10 - mJ - 240 - ns - 2.39 - µC - 22.0 - A - -320 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.6Ω,RG(off)=10.6Ω, Lσ=136nH,Cσ=39pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175°C, VR=400V, IF=30.0A, diF/dt=910A/µs dirr/dt 5 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries 200 60 180 50 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 160 140 120 100 80 60 40 30 20 40 10 20 0 25 50 75 100 125 150 0 175 25 50 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tj≤175°C) 80 9V 7V 40 30 30 10 1.0 1.5 2.0 2.5 3.0 0 3.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tj=25°C) Datasheet 7V 40 10 0.5 9V 50 20 0.0 13V 60 20 0 175 11V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 11V 50 150 15V 13V 60 125 VGE=20V 15V 70 100 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) VGE=20V 80 75 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=175°C) 6 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries 70 3.0 Tvj = 25°C Tvj = 175°C VCE(sat),COLLECTOR-EMITTERSATURATION[V] IC,COLLECTORCURRENT[A] 60 50 40 30 20 10 0 3 4 5 6 7 8 9 IC = 15A IC = 30A IC = 60A 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 10 25 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=20V) 100 125 150 175 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 75 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 50 Tj,JUNCTIONTEMPERATURE[°C] 0 5 10 15 20 25 30 35 100 10 40 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,RG=10Ω,Dynamictestcircuitin Figure E) Datasheet 0 10 20 30 40 50 RG,GATERESISTOR[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,IC=30A,Dynamictestcircuitin Figure E) 7 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries 1000 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 150 typ. min. max. 6 5 4 3 2 1 0 175 25 Tj,JUNCTIONTEMPERATURE[°C] 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RG=10Ω,Dynamictestcircuitin Figure E) Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,43mA) 4.0 Eoff Eon Ets Eoff Eon Ets 3.5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 5 4 3 2 1 3.0 2.5 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 0.0 60 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,RG=10Ω,Dynamictestcircuitin Figure E) Datasheet 0 10 20 30 40 50 RG,GATERESISTOR[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=175°C,VCE=400V, VGE=0/15V,IC=30A,Dynamictestcircuitin Figure E) 8 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries 2.5 3.5 Eoff Eon Ets 3.0 2.0 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 1.5 1.0 0.5 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 0.0 300 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RG=10Ω,Dynamictestcircuitin Figure E) 350 400 450 500 550 600 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=175°C,VGE=0/15V, IC=30A,RG=10Ω,Dynamictestcircuitin Figure E) 20 VCC=120V VCC=480V 18 Cies Coes Cres 1E+4 14 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 16 12 10 8 1000 6 100 4 2 0 0 20 40 60 80 10 100 120 140 160 180 200 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=30A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries 14 400 300 200 100 0 12 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 500 12 13 14 15 16 17 18 19 10 8 6 4 2 0 20 10 VGE,GATE-EMITTERVOLTAGE[V] 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj≤150°C) Figure 18. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTj=25°C,Tjmax≤150°C) 1 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 0.01 i: 1 2 3 4 ri[K/W]: 0.05279 0.19382 0.25779 0.29566 τi[s]: 6.5E-5 4.7E-4 6.1E-3 0.06478 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.22545 0.31252 0.26773 0.19517 τi[s]: 2.2E-4 2.3E-3 0.01546 0.1079 1 0.001 1E-7 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) Datasheet 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 10 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries 300 3.0 Tvj = 25°C, IF = 30A Tvj = 175°C, IF = 30A 200 150 100 50 0 700 2.5 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 250 Tvj = 25°C, IF = 30A Tvj = 175°C, IF = 30A 750 800 850 900 950 2.0 1.5 1.0 0.5 0.0 700 1000 1050 1100 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 750 800 850 900 950 1000 1050 1100 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 22. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 30 0 Tvj = 25°C, IF = 30A Tvj = 175°C, IF = 30A Tvj = 25°C, IF = 30A Tvj = 175°C, IF = 30A dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] -100 25 20 15 10 -200 -300 -400 -500 -600 5 -700 0 700 750 800 850 900 950 1000 1050 1100 -800 700 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Datasheet 750 800 850 900 950 1000 1050 1100 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) 11 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries 80 2.50 70 2.25 60 2.00 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] Tvj = 25°C Tvj = 175°C 50 40 30 1.75 1.50 1.25 20 1.00 10 0.75 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.50 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet IF = 15A IF = 30A IF = 60A 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 26. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries Package Drawing PG-TO247-3 Datasheet 13 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.1 2017-02-09 AIKW30N60CT TRENCHSTOPTMSeries RevisionHistory AIKW30N60CT Revision:2017-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-02-09 Data sheet created Datasheet 15 V2.1 2017-02-09 TrademarksofInfineonTechnologiesAG µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™, CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™, EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™, HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™, ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™, PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™, StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™  TrademarksupdatedNovember2015  OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.     Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2017. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. 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