AUIPS2052GTR

th May 9 , 2012 Automotive grade AUIPS2051L/AUIPS2052G INTELLIGENT POWER LOW SIDE SWITCH Features        Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current Rds(on) 300m (max.) Vclamp 70V Ishutdown 1.8A (typ.) Applications   Packages Solenoids and relays 24V truck loads Description The AUIPS2051L/AUIPS2052G is a three terminal Intelligent Power Switch (IPS) that features a low side MOSFET with over-current, over-temperature, ESD protection and drain to source active clamp. The AUIPS2052 is a dual channel device while the AUIPS2051 is a single channel.This device offers protections and the high reliability required in harsh environments. The switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 1.8A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. SOT223 AUIPS2051L SO-8 AUIPS2052G Typical Connection +Bat Load D 2 S 3 IN Control Input R Input Signal V Diag www.irf.com 1 1 AUIPS2051L/AUIPS2052G Qualification Information† Qualification Level Automotive †† (per AEC-Q100 ) Comments: This IC has passed an Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. †† SOT-223 MSL2 , 260°C (per IPC/JEDEC J-STD-020) 8L-SOICN MSL2 , 260°C (per IPC/JEDEC J-STD-020) Moisture Sensitivity Level †† Machine Model ESD Human Body Model Charged Device Model IC Latch-Up Test RoHS Compliant † †† Class M3 (per AEC-Q-100-003) Class H2 (per AEC-Q-100-002) Class C5 (per AEC-Q-100-011) ClassII, Level A (per AEC-Q100-004) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ Exceptions to AEC-Q100 requirements are noted in the qualification report. www.irf.com 2 AUIPS2051L/AUIPS2052G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25°C unless otherwise specified). Symbol Parameter Min. Max. Units Vds Vds cont. Vin Isd cont. Maximum drain to source voltage Maximum continuous drain to source voltage Maximum input voltage Max diode continuous current (limited by thermal dissipation) Rth=125°C/W Maximum power dissipation (internally limited by thermal protection) Rth=60C°/W AUIPS2051L 1” sqr. footprint Rth=100°C/W AUIPS2052G std. footprint Electrostatic discharge voltage (Human body) C=100pF, R=1500 Between drain and source Other combinations Electrostatic discharge voltage (Machine Model) C=200pF,R=0 Between drain and source Other combinations Max. storage & operating temperature junction temperature -0.3 -0.3  60 35 6 1 V V V A   2 1.25   4 3   -40 0.5 0.3 150 °C Typ. Max. Units 100 60   100  130  Pd ESD Tj max. W kV Thermal Characteristics Symbol Parameter Rth1 Rth2 Thermal resistance junction to ambient SOT-223 std. footprint Thermal resistance junction to ambient SOT-223 1” sqr. footprint Thermal resistance junction to ambient SO-8 std. Footprint Rth1 Rth1 1 die active Thermal resistance junction to ambient SO-8 std. footprint 2 die active °C/W note : Tj=Power dissipated in one channel x Rth Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter VIH VIL Ids Rin Max. t rise High level input voltage Low level input voltage Continuous drain current, Tambient=85°C, Tj=125°C, Vin=5V,Rth=100°C/W Recommended resistor in series with IN pin to generate a diagnostic Max. input rising time www.irf.com Min. Max. Units 4 0 5.5 0.5 0.9 5 1 A k µs  0.5  3 AUIPS2051L/AUIPS2052G Static Electrical Characteristics Tj=-40..150°C, Vcc=28V (unless otherwise specified) Symbol Parameter Rds(on) ON state resistance Tj=25°C ON state resistance Tj=150°C(2) Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source pin clamp voltage Input threshold voltage ON state IN positive current OFF state IN positive current ( after protection latched ) Idss1 Idss2 V clamp1 V clamp2 Vin clamp Vth Iin, on Iin, off Min. Typ. Max.     300 520 1 2 5.5 1.1 15 150 250 440 0.2 0.5 69 70 6.2 2 40 250 75 7.5 2.7 80 350 µA Min. Typ. Max. Units 0.1 0.1 1 0.1  1 0.3 1.8 0.5 5 3 2.5 3.5 2.5  Min. Typ. Max. 63  Units m µA  V Test Conditions Vin=5V, Ids=1A Vcc=28V, Tj=25°C Vcc=50V, Tj=25°C Id=20mA See fig. 3 & 4 Id=150mA Iin=1mA Id=50mA Vin=5V Switching Electrical Characteristics Vcc=28V, Resistive load=50, Rinput=50, Vin=5V, Tj=25°C Symbol Parameter Tdon Tr Tdoff Tf Eon + Eoff Turn-on delay time to 20% Rise time 20% to 80% Turn-off delay time to 80% Fall time 80% to 20% Turn on and off energy µs Test Conditions See figure 2 µJ Protection Characteristics Tj=-40..150°C, Vcc=28V (unless otherwise specified) Symbol Parameter Tsd Over temperature threshold Isd Over current threshold Vreset IN protection reset threshold Treset Time to reset protection (2) Guaranteed by design www.irf.com 150(2) 1.2 1.1 15(2) 165 1.8 1.6 50  3 2 500 Units °C A V µs Test Conditions See figure 1 See figure 1 Vin=0V, Tj=25°C 4 AUIPS2051L/AUIPS2052G Lead Assignments Functional Block Diagram All values are typical DRAIN 66V 1k 6V S R 75V 20k Q Q Tj > 165°C 1k 75 150k IN I > Isd SOURCE www.irf.com 5 AUIPS2051L/AUIPS2052G All curves are typical values. Operating in the shaded area is not recommended. Vin Ids tT reset Ishutdown Vin Isd 20% Tr-in 80% Tj Ids Tsd 165°C 20% Tshutdown Td on Td off Tr Vdiag Tf Vds normal fault Figure 1 – Timing diagram Figure 2 – IN rise time & switching definitions T clamp Vin L Rem : During active clamp, Vload is negative V load R Ids D Vds clamp IN 5V Vds + 14V - Vin 0V Vcc Vds S Ids See Application Notes to evaluate power dissipation Figure 3 – Active clamp waveforms www.irf.com Figure 4 – Active clamp test circuit 6 AUIPS2051L/AUIPS2052G 200% 150% 100% 50% 0% 0 1 2 3 4 5 6 Rds(on), Drain-to-Source On Resistance (Normalized) Rds(on), Drain-to-Source On Resistance (normalized) 200% 150% 100% 50% -50 Vin, input voltage (V) 0 50 100 150 Tj, junction temperature (°C) Figure 5 – Normalized Rdson (%) Vs Input voltage (V) Figure 6 - Normalized Rds(on) (%) Vs Tj (°C) 2 140% Isd, normalized I shutdown (%) 120% Ids, output current 1.5 1 0.5 I limit I shutdown 0 100% 80% 60% 40% 20% 0% 0 1 2 3 4 5 6 Vin, input voltage (V) Figure 7 – Current limitation and current shutdown Vs Input voltage (V) www.irf.com -50 0 50 100 150 Tj, junction temperature (°C) Figure 8 – Normalized I shutdown (%) Vs junction temperature (°C) 7 2 Ids, cont. Output current (A) SOT223 Rth=100°C/W 1 0 -50 0 50 100 150 Tamb, Ambient temperature (°C) Idss1, drain to source leakage current 28V (µA) AUIPS2051L/AUIPS2052G Figure 9 – Max. continuous output current (A) Vs Ambient temperature (°C) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 0 50 100 150 Temperature (°C) Figure 10 – Idss1 (µA) Vs temperature (°C) 1 0.1 0.1 1 10 100 1000 Inductive load (mH) Figure 11 – Max. ouput current (A) Vs Inductive load (mH) Zth, transient thermal impedance (°C/W) Ids, output current (A) 10 100 10 1 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Time (s) Figure 12 – Transient thermal impedance (°C/W) Vs time (s) This is for single pulse when Tj=165°C and for repetitive pulses when Tj