AUTOMOTIVE GRADE
AUIRF1018ES
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
60V
RDS(on) typ.
7.1m
max.
8.4m
ID
79A
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base part number
D2Pak
AUIRF1018ES
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Package Type
D2-Pak
AUIRF1018ES
S
G
S
Source
Orderable Part Number
AUIRF1018ES
AUIRF1018ESTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
79
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
56
315
110
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D2 Pak
Max.
Units
A
W
0.76
± 20
88
47
11
21
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
300
°C
Typ.
Max.
Units
–––
–––
1.32
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF1018ES
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
60
Typ. Max. Units
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
7.1
8.4
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
RG
Forward Trans conductance
Internal Gate Resistance
IDSS
Drain-to-Source Leakage Current
110
–––
–––
–––
0.73
–––
–––
–––
20
–––
–––
250
S VDS = 50V, ID = 47A
VDS = 60V, VGS = 0V
µA
VDS = 48V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
0.073 –––
V/°C Reference to 25°C, ID = 5mA
m VGS = 10V, ID = 47A
nA
VDS = VGS, ID = 100µA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff.(ER)
Coss eff.(TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
46
10
12
34
13
35
55
46
2290
270
130
390
630
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
79
–––
–––
315
–––
–––
–––
–––
–––
–––
–––
26
31
24
35
1.8
1.3
39
47
36
53
–––
ID = 47A
VDS = 30V
nC
VGS = 10V
VDD = 39V
ID = 47A
ns
RG= 10
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 47A,VGS = 0V
TJ = 25°C
VDD = 51V
ns
TJ = 125°C
IF = 47A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.08mH, RG = 25, IAS = 47A, VGS =10V. Part not recommended for use above this value.
ISD 47A, di/dt 1668A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R is measured at TJ approximately 90°C.
This is only applied to TO-220.
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AUIRF1018ES
1000
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
BOTTOM
4.5V
10
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
4.5V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 175°C
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
100
2.5
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
ID = 47A
VGS = 10V
2.0
1.5
1.0
0.5
9
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
4000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
16
Coss = Cds + Cgd
3000
C, Capacitance (pF)
10
Fig. 2 Typical Output Characteristics
1000
C iss
2000
1000
C oss
ID= 47A
VDS = 48V
VDS = 30V
12
VDS = 12V
8
4
C rss
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
1
VDS, Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2015-11-23
AUIRF1018ES
10000
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
TJ = 175°C
10
TJ = 25°C
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.0
0.5
1.0
1.5
0.1
2.0
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
ID , Drain Current (A)
80
60
40
20
0
50
75
100
125
150
10
100
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
25
1
VDS , Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
175
80
Id = 5mA
75
70
65
60
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TJ , Temperature ( °C )
TC , CaseTemperature (°C)
Fg 9. Maximum Drain Current vs. Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
400
EAS, Single Pulse Avalanche Energy (mJ)
0.8
0.6
Energy (µJ)
DC
0.1
0.1
0.4
0.2
ID
5.3A
11A
BOTTOM 47A
350
TOP
300
250
200
150
100
50
0
0.0
0
10
20
30
40
50
25
60
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical COSS Stored Energy
4
100µsec
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AUIRF1018ES
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C
2
1
2
3
3
Ci= iRi
Ci= iRi
0.01
R4
R4
SINGLE PULSE
( THERMAL RESPONSE )
4
4
C
Ri (°C/W)
i (sec)
0.026741
0.000007
0.28078
0.000091
0.606685
0.000843
0.406128
0.005884
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
100
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 47A
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
2015-11-23
AUIRF1018ES
4.0
ID = 1.0A
ID = 1.0mA
3.5
ID = 100µA
14
12
IF = 32A
VR = 51V
10
TJ = 25°C
TJ = 125°C
ID = 250µA
3.0
IRR (A)
VGS(th) Gate threshold Voltage (V)
4.5
2.5
8
6
2.0
4
1.5
2
0
1.0
-75 -50 -25
0
25
50
75
0
100 125 150 175
200
600
800
1000
diF /dt (A/µs)
TJ , Temperature ( °C )
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
320
14
12
IF = 47A
VR = 51V
10
TJ = 25°C
TJ = 125°C
IF = 32A
VR = 51V
280
TJ = 25°C
TJ = 125°C
240
QRR (nC)
IRR (A)
400
8
6
200
160
120
80
4
40
2
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
320
IF = 47A
VR = 51V
280
TJ = 25°C
TJ = 125°C
QRR (nC)
240
200
160
120
80
40
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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AUIRF1018ES
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRF1018ES
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUF1018ES
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1018ES
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1018ES
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
Human Body Model
ESD
Charged Device Model
RoHS Compliant
MSL1
Class H1B (+/- 1000V)†
AEC-Q101-001
Class C5 (+/- 1000V)†
AEC-Q101-005
Yes
Revision History
Date
11/23/2015
Comments
Updated datasheet with corporate template
Corrected ordering table on page 1.
Added ESD table on page10
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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