AUIRF1324STRL7P

  AUIRF1324S AUIRF1324L AUTOMOTIVE GRADE HEXFET® Power MOSFET Features  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Package Type AUIRF1324L TO-262 AUIRF1324S D2-Pak 24V RDS(on) typ. 1.3m max. ID (Silicon Limited) 1.65m 340A ID (Package Limited) 195A D D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number VDSS S D S G D2Pak G TO-262 AUIRF1324S AUIRF1324L G Gate D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 S Source Orderable Part Number AUIRF1324L AUIRF1324S AUIRF1324STRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 340 ID @ TC = 100°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 240 195 IDM PD @TC = 25°C Pulsed Drain Current  Maximum Power Dissipation 1420 300 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance   Symbol RJC RJA Parameter Junction-to-Case  Junction-to-Ambient (PCB Mount), D2 Pak Units A W 2.0 ± 20 270 See Fig.14,15, 18a, 18b W/°C V mJ A mJ V/ns 0.46 -55 to + 175   300   °C  Typ. Max. Units ––– ––– 0.50 40 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-11   AUIRF1324S/L Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. Typ. Max. Units V Conditions 24 ––– ––– VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 22 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 1.3 1.65 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs RG Forward Trans conductance Gate Resistance ––– ––– 20 VDS = 10V, ID = 195A Drain-to-Source Leakage Current ––– 2.3 ––– S  IDSS 180 ––– ––– ––– ––– 250 IGSS   Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 mV/°C Reference to 25°C, ID = 5mA  m VGS = 10V, ID = 195A  µA nA   VDS = 24V, VGS = 0V VDS = 24V,VGS = 0V,TJ =125°C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 160 84 49 76 17 190 83 120 7590 3440 240 ––– ––– ––– ––– ––– ––– ––– ––– ––– Crss Reverse Transfer Capacitance ––– 1960 ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 4700 ––– VDD = 16V ID = 195A ns RG= 2.7 VGS = 10V VGS = 0V VDS = 24V pF   ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 0V to 19V Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 4490 ––– VGS = 0V, VDS = 0V to 19V Min. Typ. Max. ––– ––– 350 ––– ––– 1420 ––– ––– ––– ––– ––– ––– ––– 46 71 160 430 7.7 1.3 ––– ––– ––– ––– ––– Diode Characteristics   Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ID = 195A VDS = 12V nC   VGS = 10V Units A V ns nC A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C,IS = 195A,VGS = 0V  TJ = 25°C VDD = 20V TJ = 125°C IF = 195A, TJ = 25°C di/dt = 100A/µs    TJ = 125°C TJ = 25°C  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.014mH, RG = 25, IAS = 195A, VGS =10V. Part not recommended for use above this value.  ISD 195A, di/dt 450A/µs, VDD V(BR)DSS, TJ  175°C.  Pulse width 400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994  R is measured at TJ approximately 90°C. 2 2015-11-11   AUIRF1324S/L 10000 60µs PULSE WIDTH Tj = 25°C 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V TOP BOTTOM 100 60µs PULSE WIDTH Tj = 175°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10000 TOP 1000 10 BOTTOM VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V 100 1 4.0V 4.0V 0.1 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) Fig. 2 Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 2.0 1000 100 T J = 175°C T J = 25°C 10 1 VDS = 15V 60µs PULSE WIDTH ID = 195A VGS = 10V 1.5 1.0 0.5 0.1 2 3 4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED ID = 195A = C gd VGS, Gate-to-Source Voltage (V) Crss Coss = Cds + Cgd C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics Ciss C oss 10000 Crss 1000 12.0 VDS = 19V VDS = 12V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 1 0 50 100 150 200 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-11-11   AUIRF1324S/L 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175°C 100 T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 1msec 100 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.5 1.0 Limited by package 10msec 10 1 1.5 10 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) ID, Drain Current (A) Fig 8. Maximum Safe Operating Area Fig. 7 Typical Source-to-Drain Diode Forward Voltage 300 Limited By Package 250 200 150 100 50 0 25 50 75 100 125 150 175 32 Id = 5mA 30 28 26 24 -60 -40 -20 0 20 40 60 80 100 120 140160 180 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature EAS , Single Pulse Avalanche Energy (mJ) 1.8 ID 44A 83A BOTTOM 195A TOP 1000 1.6 1.4 Energy (µJ) Fig 10. Drain-to-Source Breakdown Voltage 1200 2.0 1.2 1.0 0.8 0.6 0.4 0.2 800 600 400 200 0 0.0 -5 0 5 10 15 20 25 25 30 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) VDS, Drain-to-Source Voltage (V) Fig 12. Maximum Avalanche Energy vs. Drain Current Fig 11. Typical COSS Stored Energy 4 100 VDS , Drain-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) 350 DC 1 1.0 0.0 100µsec   2015-11-11   AUIRF1324S/L Thermal Response ( Z thJC ) °C/W 1 D = 0.50 Ri (°C/W) 0.20 0.1 0.10 J 0.05 R1 R1 J 1 0.02 0.01 0.01 R2 R2 R3 R3 R4 R4 C 2 1 2 3 3 4 Ci= iRi Ci= iRi 1E-005 0.0125 0.000008 0.0822 0.000078 0.2019 0.001110 0.2036 0.007197 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 4 C I (sec) 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 0.01 100 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse width   5 2015-11-11   AUIRF1324S/L Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav VGS(th) , Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature   6 2015-11-11   AUIRF1324S/L Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V tp L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 18a. Unclamped Inductive Test Circuit Fig 19a. Switching Time Test Circuit I AS Fig 18b. Unclamped Inductive Waveforms Fig 19b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 20a. Gate Charge Test Circuit   7 Qgd Qgodr Fig 20b. Gate Charge Waveform 2015-11-11   AUIRF1324S/L D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF1324S Date Code YWWA IR Logo XX  Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/   8 2015-11-11   AUIRF1324S/L TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF1324L Date Code YWWA IR Logo XX  Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-11   AUIRF1324S/L D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-11-11   AUIRF1324S/L Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level  Moisture Sensitivity Level   D2-Pak MSL1 TO-262 Machine Model Human Body Model   ESD Charged Device Model RoHS Compliant Class M4† AEC-Q101-002 Class H3A† AEC-Q101-001 Class C5† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 11/11/2015 Comments   Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   11 2015-11-11