AUTOMOTIVE GRADE
AUIRF1404
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
VDSS
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET® power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
Package Type
AUIRF1404
TO-220
40V
RDS(on) typ.
max.
ID (Silicon Limited)
4.0m
202A
ID (Package Limited)
160A
S
D
G
TO-220AB
AUIRF1404
G
Gate
D
Drain
Standard Pack
Form
Tube
3.5m
S
Source
Orderable Part Number
Quantity
50
AUIRF1404
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
143
160
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
808
333
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
RJC
RCS
RJA
Units
202
A
W
2.2
± 20
620
See Fig.15,16, 12a, 12b
1.5
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.50
–––
0.45
–––
62
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF1404
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
40
––– –––
V VGS = 0V, ID = 250µA
––– 0.039 ––– V/°C Reference to 25°C, ID = 1mA
–––
3.5
4.0 m VGS = 10V, ID = 121A
2.0
–––
4.0
V VDS = VGS, ID = 250µA
76
––– –––
S VDS = 25V, ID = 121A
––– –––
20
VDS =40 V, VGS = 0V
µA
––– ––– 250
VDS =32V,VGS = 0V,TJ =150°C
––– ––– 100
VGS = 20V
nA
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
131
36
37
17
190
46
33
196
–––
56
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
–––
–––
–––
5669
1659
223
6205
1467
2249
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
––– 202
–––
–––
808
–––
–––
–––
–––
78
163
1.5
117
245
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Effective Output Capacitance
Coss eff.
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Reverse Recovery Time
trr
Qrr
Reverse Recovery Charge
Forward Turn-On Time
ton
ID = 121A
nC VDS = 32V
VGS = 10V
VDD = 20V
ID = 121A
ns
RG= 2.5
RD = 0.2
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 32V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 121A,VGS = 0V
ns TJ = 25°C ,IF = 121A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting TJ = 25°C, L = 85H, RG = 25, IAS = 121A, VGS =10V. (See fig. 12)
ISD 121A, di/dt 130A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A.
R is measured at TJ of approximately 90°C.
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AUIRF1404
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D, Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
100
100
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
4.5V
10
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 25V
20µs PULSE WIDTH
6
7
8
9
10
11
12
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
10
100
Fig. 2 Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D, Drain-to-Source Current (A)
1000
5
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
4
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
VDS, Drain-to-Source Voltage (V)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
2.5
ID = 202A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2017-09-18
AUIRF1404
10000
VGS, Gate-to-Source Voltage (V)
Crss = Cgd
Coss = Cds + Cgd
8000
C, Capacitance(pF)
20
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Ciss
6000
4000
Coss
2000
Crss
ID = 121A
V DS= 32V
V DS= 20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
0
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
200
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 175 ° C
1000
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
150
10000
100
10
TJ = 25 ° C
1
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
3.0
VSD ,Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
100
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
0.1
0.0
50
QG , Total Gate Charge (nC)
3.5
10us
100us
100
1ms
10ms
10
1
TC = 25 °C
TJ = 175 °C
Single Pulse
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2017-09-18
AUIRF1404
250
Limited By Package
ID, Drain Current (A)
200
150
Fig 10a. Switching Time Test Circuit
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF1404
15V
DRIVER
L
VDS
EAS , Single Pulse Avalanche Energy (mJ)
1500
1200
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
ID
49A
101A
121A
TOP
BOTTOM
900
600
300
0
25
50
75
100
125
150
Starting T J, Junction Temperature
175
( ° C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
-V GS(th) Gate threshold Voltage (V)
4.0
3.0
ID = -250µA
2.0
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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AUIRF1404
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
100
0.05
0.10
10
1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
400
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 121A
EAR , Avalanche Energy (mJ)
350
300
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
250
200
150
100
50
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
175
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
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AUIRF1404
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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AUIRF1404
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Part Number
AUIRF1404
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
TO-220AB package is not recommended for Surface Mount Application.
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AUIRF1404
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
TO-220AB
N/A
Class M4 (+/- 425V)†
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
Class C5 (+/- 1125V)†
AEC-Q101-005
Yes
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
† Highest passing voltage.
Revision History
Date
Comments
9/30/2015
Updated datasheet with corporate template.
Corrected typo on IDSS test condition on page 2.
Updated Package outline on page 9.
9/18/2017
Corrected typo error on part marking on page 9.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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