AUIRF1404S

  AUIRF1404S AUIRF1404L AUTOMOTIVE GRADE HEXFET® Power MOSFET Features  Advanced Planar Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Package Type AUIRF1404L TO-262 AUIRF1404S D2-Pak 40V RDS(on) typ. max. 3.5m ID (Silicon Limited) 4.0m 162A ID (Package Limited) 75A D D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number VDSS   S G G TO-262 AUIRF1404L D2Pak AUIRF1404S G Gate D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 S D S Source Orderable Part Number AUIRF1404L AUIRF1404S AUIRF1404STRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  162 ID @ TC = 100°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  Continuous Drain Current, VGS @ 10V (Package Limited) 115 75 IDM PD @TA = 25°C Pulsed Drain Current  Maximum Power Dissipation PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) VGS EAS IAR EAR Dv/dt TJ TSTG Thermal Resistance   Symbol RJC RJA Parameter Junction-to-Case  Junction-to-Ambient ( PCB Mount, steady state)  Units A 650 3.8 200 1.3 ± 20 519 95 20 5.0 -55 to + 175 W W/°C V mJ A mJ V/ns °C   300 Typ. Max. Units ––– 0.75 40 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-11   AUIRF1404S/L Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 40 ––– ––– V VGS = 0V, ID = 250µA ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA ––– 3.5 4.0 m VGS = 10V, ID = 95A  2.0 ––– 4.0 V VDS = VGS, ID = 250µA 106 ––– ––– S VDS = 25V, ID = 60A ––– ––– 20 VDS = 40 V, VGS = 0V µA ––– ––– 250 VDS = 32V,VGS = 0V,TJ =125°C ––– ––– 200 VGS = 20V nA ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– 160 35 42 17 140 72 26 200 ––– 60 ––– ––– ––– ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– ––– ––– ––– 7360 1680 240 6630 1490 1540 ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 162 ––– ––– 650 ––– ––– ––– ––– 71 180 1.3 110 270 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Effective Output Capacitance Coss eff. Diode Characteristics   Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Forward Turn-On Time ton ID = 95A nC   VDS = 32V VGS = 10V VDD = 20V ID = 95A ns RG= 2.5 RD= 0.21 Between lead, nH   and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5  pF   VGS = 0V, VDS = 1.0V ƒ = 1.0MHz VGS = 0V, VDS = 32V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 95A,VGS = 0V  ns TJ = 25°C ,IF = 95A nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)  Starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 95A, VGS =10V. (See fig. 12)  ISD 95A, di/dt 150A/µs, VDD V(BR)DSS, TJ  175°C.  Pulse width 300µs; duty cycle  2%.  Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.  Use IRF1404 data and test conditions.  This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994  R is measured at TJ approximately 90°C. 2 2015-11-11   AUIRF1404S/L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 1 10 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C 100 V DS= 25V 20µs PULSE WIDTH 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 100 Fig. 2 Typical Output Characteristics 1000 7.0 1 VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 6.0 20µs PULSE WIDTH TJ = 175 °C 10 0.1 VDS , Drain-to-Source Voltage (V) 5.0 4.5V 100 20µs PULSE WIDTH TJ = 25 °C 10 0.1 10 4.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 159A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature ( °C) Fig. 4 Normalized On-Resistance Vs. Temperature 2015-11-11   AUIRF1404S/L 20 12000 C, Capacitance (pF) 10000 8000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 6000 4000 Coss 2000 Crss VDS = 32V VDS = 20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 ID = 95A 10 0 100 40 80 120 160 200 240 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 1000 TJ = 175 °C ID , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100 TJ = 25 °C 10 100us 100 1ms 10ms 10 1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage   4 10us 1 2.4 TC = 25 °C TJ = 175 °C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-11-11   AUIRF1404S/L 200 LIMITED BY PACKAGE ID , Drain Current (A) 160 Fig 10a. Switching Time Test Circuit 120 80 40 0 25 50 75 100 125 TC, Case Temperature 150 175 ( °C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-11-11   AUIRF1404S/L 1200 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 15V TOP 1000 D.U.T RG + V - DD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp BOTTOM ID 39A 67A 95A 800 600 400 200 0 25 50 75 100 125 150 Starting T J, Junction Temperature 175 ( ° C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform V DSav , Avalanche Voltage ( V ) 50 48 46 44 42 40 0 20 40 60 80 100 IAV , Avalanche Current ( A) Fig 13b. Gate Charge Test Circuit   6 Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 2015-11-11   AUIRF1404S/L Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs   7 2015-11-11   AUIRF1404S/L D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF1404S Date Code YWWA IR Logo XX  Y= Year WW= Work Week XX Lot Code 8 2015-11-11   AUIRF1404S/L TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF1404L Date Code YWWA IR Logo XX  Y= Year WW= Work Week XX Lot Code   9 2015-11-11   AUIRF1404S/L D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 10 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2015-11-11   AUIRF1404S/L Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model   Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-262 MSL1 D2-Pak Class M4 (+/- 425V) † AEC-Q101-002 Class H2 (+/- 4000V)† AEC-Q101-001 Class C5 (+/-1125V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 11/11/2015 Comments   Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   11 2015-11-11