AUIRF1405ZS

  AUIRF1405ZS AUIRF1405ZL AUTOMOTIVE GRADE HEXFET® Power MOSFET Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Package Type AUIRF1405ZL TO-262 D -Pak 4.9m 150A ID D D S S D G G D2Pak AUIRF1405ZS TO-262 AUIRF1405ZL G Gate D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 2 AUIRF1405ZS 55V RDS(on) max. Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number VDSS S Source Orderable Part Number AUIRF1405ZL AUIRF1405ZS AUIRF1405ZSTRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 150 ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation 110 600 230 VGS EAS EAS (tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy Tested Value  Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance   Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount, steady state)  Max. Units A W 1.5 ± 20 270 420 See Fig.15,16, 12a, 12b W/°C V mJ A mJ -55 to + 175   300   °C  Typ. Max. Units ––– 0.65 40 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-11   AUIRF1405ZS/L Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 55 ––– ––– V VGS = 0V, ID = 250µA ––– 0.049 ––– V/°C Reference to 25°C, ID = 1mA ––– 3.7 4.9 m VGS = 10V, ID = 75A  2.0 ––– 4.0 V VDS = VGS, ID = 250µA 88 ––– ––– S VDS = 25V, ID = 75A ––– ––– 20 VDS = 55 V, VGS = 0V µA ––– ––– 250 VDS = 55V,VGS = 0V,TJ =125°C ––– ––– 200 VGS = 20V nA ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– 120 31 46 18 110 48 82 180 ––– ––– ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– ––– ––– ––– 4780 770 410 2730 600 910 ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 75 ––– ––– 600 ––– ––– ––– ––– 30 30 1.3 46 45 Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Effective Output Capacitance Coss eff. Diode Characteristics   Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge Forward Turn-On Time ton ID = 75A nC   VDS = 44V VGS = 10V VDD = 25V ID = 75A ns RG= 4.4 VGS = 10V  Between lead, 6mm (0.25in.) nH   from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz pF   VGS = 0V, VDS = 1.0V ƒ = 1.0MHz VGS = 0V, VDS = 44V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V  Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 75A,VGS = 0V  ns TJ = 25°C ,IF = 75A, VDD = 25V nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:        Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax, starting TJ = 25°C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle  2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25°C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V. This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2015-11-11   AUIRF1405ZS/L 1000 1000 100 BOTTOM TOP 10 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 10 4.5V 10 1 1 1 BOTTOM 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.1 100 0.1 100 10 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 200 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current ) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) T J = 150°C 100 T J = 25°C 10 VDS = 25V 20µs PULSE WIDTH 175 150 T J = 25°C 125 100 T J = 175°C 75 50 25 0 1 4 6 8 10 12 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 0 25 50 75 100 125 150 175 200 ID ,Drain-to-Source Current (A) Fig. 4 Typical Forward Trans conductance vs. Drain Current 2015-11-11   AUIRF1405ZS/L 100000 12.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd VGS, Gate-to-Source Voltage (V) ID= 75A C, Capacitance(pF) Coss = Cds + Cgd 10000 C iss C oss 1000 C rss VDS = 44V VDS = 28V 10.0 8.0 6.0 4.0 2.0 0.0 100 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 60 80 100 120 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 40 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) T J = 175°C 100.00 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 10.00 100 T J = 25°C 1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage   4 20 2.5 100µsec 10 Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-11-11   AUIRF1405ZS/L 150 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID, Drain Current (A) 125 100 75 50 25 0 ID = 75A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 -60 -40 -20 0 175 T C , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-11-11   AUIRF1405ZS/L 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 500 ID TOP 31A 53A BOTTOM 75A 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs 4.0 Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform VGS(th) Gate threshold Voltage (V) Vgs(th) 3.5 3.0 2.5 ID = 250µA 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit   6 2015-11-11   AUIRF1405ZS/L 10000 Avalanche Current (A) Duty Cycle = Single Pulse 1000 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming  Tj = 25°C due to avalanche losses 0.01 0.05 10 0.10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 250 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) 175 PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature   7 2015-11-11   AUIRF1405ZS/L Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms   8 2015-11-11   AUIRF1405ZS/L D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF1405ZS Date Code YWWA IR Logo XX  Y= Year WW= Work Week XX Lot Code 9 2015-11-11   AUIRF1405ZS/L TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF1405ZL Date Code YWWA IR Logo XX  Y= Year WW= Work Week XX Lot Code   10 2015-11-11   AUIRF1405ZS/L D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 11 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2015-11-11   AUIRF1405ZS/L Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model   Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-262 MSL1 D2-Pak Class M4 (+/-425)† AEC-Q101-002 Class H1C (+/-2000V)† AEC-Q101-001 Class C5 (+/-1125V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 11/11/2015 Comments   Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   12 2015-11-11