AUTOMOTIVE GRADE
AUIRF2903Z
HEXFET® Power MOSFET
Features
Advanced Planar Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
RDS(on) typ.
max.
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
Base part number
Package Type
AUIRF2903Z
TO-220
30V
ID (Silicon Limited)
2.4m
260A
ID (Package Limited)
160A
S
D
G
TO-220AB
AUIRF2903Z
G
Gate
D
Drain
Standard Pack
Form
Tube
1.9m
S
Source
Orderable Part Number
Quantity
50
AUIRF2903Z
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
260
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
180
160
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
1020
290
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
RJC
RCS
RJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Units
A
W
2.0
± 20
290
820
See Fig.15,16, 12a, 12b
-55 to + 175
W/°C
V
mJ
A
mJ
°C
300
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
0.50
–––
0.51
–––
62
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF2903Z
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
30
––– –––
V VGS = 0V, ID = 250µA
––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
–––
1.9
2.4 m VGS = 10V, ID = 75A **
2.0
–––
4.0
V VDS = VGS, ID = 250µA
120 ––– –––
S VDS = 10V, ID = 75A **
––– –––
20
VDS =30 V, VGS = 0V
µA
––– ––– 250
VDS =30V,VGS = 0V,TJ =125°C
––– ––– 200
VGS = 20V
nA
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
160
51
58
24
100
48
37
240
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
–––
–––
–––
–––
–––
–––
6320
1980
1100
5930
2010
3050
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
––– 160
–––
–––
1020
–––
–––
–––
–––
34
29
1.3
51
44
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Effective Output Capacitance
Coss eff.
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
Reverse Recovery Time
trr
Qrr
Reverse Recovery Charge
Forward Turn-On Time
ton
–––
–––
–––
–––
ID = 75A **
nC VDS = 24V
VGS = 10V
VDD = 15V
ID = 75A **
ns
RG= 3.2
VGS = 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 24V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 75A **,VGS = 0V
ns TJ = 25°C ,IF = 75A **, VDD = 15V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
This is only applied to TO-220AB pakcage.
R is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current
limitations arising from heating of the device leads mayoccur with some lead mounting arrangements.
** All AC and DC test condition based on former Package limited current of 75A.
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AUIRF2903Z
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
4.5V
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
4.5V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
10
1
0.1
1
10
100
0.1
1000
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
240
1000.0
100.0
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current)
TJ = 25°C
TJ = 175°C
10.0
TJ = 25°C
1.0
VDS = 25V
200
TJ = 175°C
160
120
80
40
VDS = 10V
380µs PULSE WIDTH
60µs PULSE WIDTH
0.1
0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
10.0
0
20
40
60
80 100 120 140 160 180
ID, Drain-to-Source Current (A)
Fig. 4 Typical Forward Transconductance
Vs. Drain Current
2017-09-20
AUIRF2903Z
12000
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
10000
ID= 75A
8000
Ciss
6000
4000
Coss
2000
Crss
VDS= 15V
16
12
8
4
0
0
1
10
0
100
40
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
ID, Drain-to-Source Current (A)
10000
TJ = 175°C
100.0
120
160
200
240
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10.0
TJ = 25°C
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
1msec
100µsec
100
LIMITED BY PACKAGE
10
1
VGS = 0V
10msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
4
80
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
Coss = Cds + Cgd
VDS = 24V
2.4
0.1
1.0
10.0
100.0
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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AUIRF2903Z
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
300
LIMITED BY PACKAGE
ID , Drain Current (A)
250
200
150
100
50
0
ID = 75A
VGS = 10V
1.5
1.0
0.5
25
50
75
100
125
150
175
-60 -40 -20
TC , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
J
0.02
0.01
R1
R1
J
1
R2
R2
R3
R3
C
1
2
2
3
Ci= iRi
Ci= iRi
3
C
Ri (°C/W)
i (sec)
0.81330
0.000044
0.2408
0.000971
0.18658
0.008723
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF2903Z
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
0.01
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
1200
ID
26A
42A
BOTTOM 75A
TOP
1000
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
4.5
ID = 1.0A
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Gate Charge Waveform
VGS(th) Gate threshold Voltage (V)
Vgs
ID = 1.0mA
4.0
ID = 250µA
ID = 150µA
3.5
3.0
2.5
2.0
1.5
1.0
-75
-50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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AUIRF2903Z
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
0.05
0.10
10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
250
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
175
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
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AUIRF2903Z
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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AUIRF2903Z
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Part Number
AUIRF2903Z
YWWA
IR Logo
XX
Date Code
Y= Year
WW= Work Week
XX
Lot Code
TO-220AB package is not recommended for Surface Mount Application.
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AUIRF2903Z
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
3L-TO-220AB
N/A
Class M4 (+/- 800V)†
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
9/20/2017
Comments
Updated datasheet with corporate template.
Corrected typo error on package outline and part marking on page 7.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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