AUIRF3004WL

PD - 97677 AUTOMOTIVE GRADE AUIRF3004WL HEXFET® Power MOSFET Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 50% Lower Lead Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS 40V RDS(on) typ. max. G S 1.27mΩ 1.40mΩ ID (Silicon Limited) 386A c ID (Package Limited) 240A Description Specifically design for automotive applications this Widelead TO262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die. This greatly helps in reducing condition losses, achieving higher current levels or enabling a system to run cooler and have improved efficiency. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive and other applications. S G D TO-262 WideLead G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS (Thermally limited) IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) d Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy d f e d Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Units c c 386 273 240 1544 375 2.5 ± 20 470 See Fig. 14, 15, 22a, 22b, 6.1 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case) Thermal Resistance Parameter RθJC Junction-to-Case j Typ. Max. Units ––– 0.40 °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 05/13/11 AUIRF3004WL Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) gfs RG IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Internal Gate Resistance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 40 ––– ––– 2.0 330 ––– ––– ––– ––– ––– ––– ––– 0.038 ––– 1.27 1.40 ––– 4.0 ––– ––– 2.7 ––– ––– 20 ––– 250 ––– 100 ––– -100 Conditions V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 5mA mΩ VGS = 10V, ID = 195A V VDS = VGS, ID = 250μA S VDS = 10V, ID = 195A Ω VDS = 40V, VGS = 0V μA VDS = 32V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Effective Output Capacitance (Energy Related) ––– ––– Effective Output Capacitance (Time Related) 140 53 49 91 19 220 90 130 9450 1930 975 2330 2815 210 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– g g nC ns Conditions ID = 232A VDS =20V VGS = 10V ID = 232A, VDS =0V, VGS = 10V VDD = 26V ID = 232A RG = 2.7Ω VGS = 10V VGS = 0V VDS = 32V ƒ = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 32V , See Fig.11 VGS = 0V, VDS = 0V to 32V g g g pF i h Diode Characteristics Parameter IS Continuous Source Current VSD trr (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM d Min. Typ. Max. Units ––– ––– ––– 386 ––– c 1544 Conditions MOSFET symbol A showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 195A, VGS = 0V TJ = 25°C VR = 34V, TJ = 125°C IF = 232A di/dt = 100A/μs TJ = 25°C g S ––– ––– 1.3 V ––– 41 62 ns ––– 51 77 ––– 62 93 nC TJ = 125°C ––– 99 149 ––– 2.3 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) g Notes:  Calculated continuous current based on maximum allowable junction „ ISD ≤ 232A, di/dt ≤ 907A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. temperature. Package limitation current is 240A. Note that current … Pulse width ≤ 400μs; duty cycle ≤ 2%. limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time some lead mounting arrangements.(Refer to AN-1140 as Coss while VDS is rising from 0 to 80% VDSS . ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as http://www.irf.com/technical-info/appnotes/an-1140.pdf Coss while VDS is rising from 0 to 80% VDSS. ‚ Repetitive rating; pulse width limited by max. junction ˆ Rθ is measured at TJ approximately 90°C. temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.018mH RG = 50Ω, IAS = 232A, VGS =10V. Part not recommended for use above this value. 2 www.irf.com AUIRF3004WL 10000 10000 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 4.5V 10 ≤60μs PULSE WIDTH 1000 BOTTOM 100 4.5V ≤60μs PULSE WIDTH Tj = 25°C Tj = 175°C 1 10 0.1 1 10 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 10 100 1000 Fig 2. Typical Output Characteristics 10000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 TJ = 175°C T J = 25°C 10 1 VDS = 25V ≤60μs PULSE WIDTH 0.1 ID = 195A VGS = 10V 1.5 1.0 0.5 0.0 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 232A C oss = C ds + C gd C, Capacitance (pF) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V Ciss Coss 10000 Crss 1000 12.0 VDS= 32V VDS= 20V 10.0 8.0 6.0 4.0 2.0 0.0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com 0 20 40 60 80 100 120 140 160 180 200 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 AUIRF3004WL 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10000 1000 T J = 175°C 100 TJ = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100μsec 100 Limited by package 10 1msec 1 VGS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 VSD, Source-to-Drain Voltage (V) 300 200 100 0 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) ID, Drain Current (A) Limited By Package 50 10 100 Fig 8. Maximum Safe Operating Area 400 25 1 VDS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage T C , Case Temperature (°C) 56 Id = 5mA 54 52 50 48 46 44 42 40 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) Fig 10. Drain-to-Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature 2.0 EAS , Single Pulse Avalanche Energy (mJ) 2000 1.8 1.6 1.4 Energy (μJ) 10msec 0.1 0.0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ID TOP 45A 86A BOTTOM 232A 1800 1600 1400 1200 1000 800 600 400 200 0 -5 0 5 10 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 DC Tc = 25°C Tj = 175°C Single Pulse 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12. Maximum Avalanche Energy vs. DrainCurrent www.irf.com AUIRF3004WL Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 τJ 1E-005 τJ τ1 R2 R2 τ2 τ1 R3 R3 τ3 τ2 τC τ τ3 Ri (°C/W) τi (sec) 0.2063 0.017817 0.0394 0.000116 0.1534 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R1 R1 0.002614 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth www.irf.com 5 AUIRF3004WL EAR , Avalanche Energy (mJ) 500 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figure 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 232A 400 300 200 100 0 25 50 75 100 125 150 PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 175 Starting T J , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature VGS(th) , Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 ID = 250μA ID = 1.0mA ID = 1.0A 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature 6 www.irf.com AUIRF3004WL Driver Gate Drive D.U.T ƒ - ‚ - - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A 0.01Ω tp I AS Fig 22a. Unclamped Inductive Test Circuit LD Fig 22b. Unclamped Inductive Waveforms VGS VDS 90% + VDD D.U.T 10% VGS VDS Second Pulse Width < 1μs Duty Factor < 0.1% td(off) Fig 23a. Switching Time Test Circuit tf td(on) tr Fig 23b. Switching Time Waveforms Id Vds Vgs L DUT 0 1K 20K VCC Vgs(th) S Qgodr Fig 24a. Gate Charge Test Circuit www.irf.com Qgd Qgs2 Qgs1 Fig 24b. Gate Charge Waveform 7 AUIRF3004WL TO-262 WideLead Package Outline Dimensions are shown in millimeters (inches) TO-262 WideLead Part Marking Information Part Number AUIRF3004WL YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com AUIRF3004WL Ordering Information Base part number AUIRF3004WL www.irf.com Package Type TO-262 WideLead Standard Pack Form Tube Complete Part Number Quantity 50 AUIRF3004WL 9 AUIRF3004WL IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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