AUIRF3305

AUTOMOTIVE GRADE AUIRF3305   Features  Advanced Planar Technology  Low On-Resistance  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * HEXFET® Power MOSFET   RDS(on) Package Type AUIRF3305 TO-220 55V max. 8.0m ID Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number V(BR)DSS 140A S D G TO-220AB AUIRF3305 G Gate D Drain Standard Pack Form Tube S Source Orderable Part Number Quantity 50 AUIRF3305 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140 ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation 99 560 330 VGS EAS EAS (Tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Single Pulse Avalanche Energy (Tested Value)  Avalanche Current  Repetitive Avalanche Energy  Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance   Symbol RJC RCS RJA Max. Units A W 2.2 ± 20 470 860 See Fig.15,16, 12a, 12b -55 to + 175 W/°C V mJ A mJ   °C  300 10 lbf•in (1.1N•m)     Parameter Typ. Max. Units Junction-to-Case  Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ––– 0.50 ––– 0.45 ––– 62 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2019-12-03 AUIRF3305   Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 55 ––– ––– V VGS = 0V, ID = 250µA ––– 0.055 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 8.0 m VGS = 10V, ID = 75A  2.0 ––– 4.0 V VDS = VGS, ID = 250µA 41 ––– ––– S VDS = 25V, ID = 75A ––– ––– 25 VDS = 55 V, VGS = 0V µA ––– ––– 250 VDS = 55V,VGS = 0V,TJ =125°C ––– ––– 200 VGS = 20V nA ––– ––– -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– 100 21 45 16 88 43 34 150 ––– ––– ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– ––– ––– ––– 3650 1230 450 4720 930 1490 ––– ––– ––– ––– ––– ––– Min. Typ. Max. Units ––– ––– 75 ––– ––– 560 ––– ––– ––– ––– 57 130 1.3 86 190 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Effective Output Capacitance Coss eff. Diode Characteristics   Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge Forward Turn-On Time ton ID = 75A nC   VDS = 44V VGS = 10V  VDD = 28V ID = 75A ns RG= 2.6 VGS = 10V  Between lead, 6mm (0.25in.) nH   from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz pF   VGS = 0V, VDS = 1.0V ƒ = 1.0MHz VGS = 0V, VDS = 44V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V  Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 75A,VGS = 0V  ns TJ = 25°C ,IF = 75A, VDD = 28V nC di/dt = 100A/µs  Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)  Limited by TJmax, starting TJ = 25°C, L = 0.17mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.  Pulse width 1.0ms; duty cycle  2%.  Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.  This value determined from sample failure population. 100% tested to this value in production.  R is measured at TJ of approximately 90°C.  All AC and DC test conditions based on former package limited current of 75A. 2 2019-12-03 AUIRF3305   3 Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Trans conductance Vs. Drain Current 2019-12-03 AUIRF3305   Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage   4 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 2019-12-03 AUIRF3305   Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2019-12-03 AUIRF3305   Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp I AS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 13a. Gate Charge Waveform Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit   6 2019-12-03 AUIRF3305   Fig 15. Typical Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature   7 2019-12-03 AUIRF3305   Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms   8 2019-12-03 AUIRF3305   TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number AUIRF3305 YWWA IR Logo XX  Date Code Y= Year WW= Work Week XX Lot Code TO-220AB package is not recommended for Surface Mount Application.   9 2019-12-03 AUIRF3305   Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model Human Body Model   ESD Charged Device Model RoHS Compliant 3L-TO-220 N/A Class M4 (+/- 425V)† AEC-Q101-002 Class H2 (+/- 4000V)† AEC-Q101-001 Class C5 (+/- 1125V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 12/3/2019 Comments   Updated datasheet with corporate template. Updated Part Marking from “AUF3305” to “AUIRF3305” on page 9. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.   10 2019-12-03