AUIRF3504

PD - 97696A AUTOMOTIVE GRADE AUIRF3504 Features l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* HEXFET® Power MOSFET D G S V(BR)DSS 40V RDS(on) typ. 7.8mΩ max 9.2mΩ ID 87A D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRF3504 G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Max. Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 87 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 61 Units A c 350 PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage 143 0.95 ± 20 W W/°C V 199 mJ IDM EAS Pulsed Drain Current d Single Pulse Avalanche Energy (Thermally Limited) i EAS (tested) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw c h 368 See Fig. 12a, 12b, 15, 16 -55 to + 175 °C 300 10 lbf in (1.1N m) y Thermal Resistance Max. ––– 1.05 Case-to-Sink, Flat, Greased Surface 0.50 ––– Junction-to-Ambient ––– 62 Junction-to-Case RθCS RθJA j Parameter y Typ. RθJC A mJ Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 08/30/11 AUIRF3504 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) gfs IDSS IGSS Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 40 ––– ––– 2.0 46 ––– ––– ––– ––– ––– 0.04 7.8 ––– ––– ––– ––– ––– ––– ––– ––– 9.2 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 52A V VDS = VGS, ID = 100μA S VDS = 10V, ID = 52A μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ––– ––– ––– ––– ––– ––– ––– ––– 36 12 13 9.9 61 24 29 4.5 54 18 20 ––– ––– ––– ––– ––– LS Internal Source Inductance ––– 7.5 ––– 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– 2150 600 54 2885 526 147 ––– ––– ––– ––– ––– ––– S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V nC ns nH g pF ID = 52A VDS = 32V VGS = 10V VDD = 20V ID = 52A RG = 2.7 Ω VGS = 10V Between lead, f f D G Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 87 ISM (Body Diode) Pulsed Source Current ––– ––– 350 showing the integral reverse VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time 1.3 98 216 S p-n junction diode. TJ = 25°C, IS = 52A, VGS = 0V TJ = 25°C, IF = 52A di/dt = 100A/μs c Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Starting TJ = 25°C, L = 0.15mH RG = 50Ω, IAS = 52A. (See Figure 12). ƒ ISD ≤ 52A, di/dt ≤ 6750A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 400μs; duty cycle ≤ 2%. 2 MOSFET symbol A ––– ––– ––– ––– 65 144 V ns nC D G f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ‡ This value determined from sample failure population, starting TJ = 25°C, L = 0.15mH, RG = 50Ω, IAS = 52A. ˆ Rθ is measured at TJ of approximately 90°C. www.irf.com AUIRF3504 Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 N/A Class M4 (+/- 500V) AEC-Q101-002 ††† Class H1C (+/- 1500V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 ††† ††† Yes † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage. www.irf.com 3 AUIRF3504 1000 1000 100 BOTTOM VGS 15V 10V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 100 10 4.5V BOTTOM 10 4.5V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 175°C Tj = 25°C 1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 1000 70 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (A) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TJ = 175°C 10 T J = 25°C 1 VDS = 25V ≤60μs PULSE WIDTH 0.1 TJ = 25°C 60 50 40 T J = 175°C 30 20 10 V DS = 5.0V 0 380μs PULSE WIDTH -10 0 2 4 6 8 10 12 14 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 16 0 20 40 60 80 100 120 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com AUIRF3504 100000 VGS, Gate-to-Source Voltage (V) ID= 52A C oss = C ds + C gd 10000 C, Capacitance (pF) 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Ciss 1000 Coss Crss 100 10 12.0 VDS= 32V VDS= 20V 10.0 VDS= 8.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 15 20 25 30 35 40 45 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 T J = 175°C T J = 25°C 10 10 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 5 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 100 1msec 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 1.0 DC 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.5 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF3504 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID, Drain Current (A) 80 60 40 20 0 ID = 87A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180 T C , Case Temperature (°C) T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.1 0.01 0.001 0.0001 1E-006 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF3504 15V DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 800 ID 11A 23A BOTTOM 52A TOP 600 400 200 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 4.5 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2μF .3μF D.U.T. + V - DS VGS VGS(th) , Gate threshold Voltage (V) VG 4.0 3.5 ID = 100μA 3.0 2.5 2.0 1.5 -100 -50 0 50 100 150 200 T J , Temperature ( °C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com Fig 14. Threshold Voltage vs. Temperature 7 AUIRF3504 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 250 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 52A 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 8 www.irf.com AUIRF3504 D.U.T Driver Gate Drive ƒ + ‚ - „ * D.U.T. ISD Waveform Reverse Recovery Current +  RG V DD • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF3504 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF3504 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF3504 Ordering Information Base part number Package Type Standard Pack AUIRF3504 TO-220 Form Tube www.irf.com Complete Part Number Quantity 50 AUIRF3504 11 AUIRF3504 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 12 www.irf.com